ST EF 017 Search Results

Contextual Info: ri 2.29 .090 REF. ri C REF. - 3 hïhV hV hV hV ] 1 ( 0 . 20 ) .008 (2.54) .100 (0.43) .017 REF. (1.40) REF. .055 REF. - 'J (2.54) .100 SECTION D-D - RETENTION PIN DETAIL 2 CONTACTS LOCATED ON CENTER OF SAME ROW (SEE NOTE 6) TYP. (1.14) LK 3 4 5 6 7 8 9

ELDF

Abstract: 5636 TUBE subminiature tubes 15E tube TYPE 15E TUBES
Contextual Info: 5636 PREMIUM TUBE TIIHS'SOI PENTODE 383’ SUBMINIATURE TYPE —.017" COATED UN IPOTENTIAL CATHODE T -3 1.0 7 5 ” t.06 0 “ HEATER 6-3 VOLTS 0.15 AMP. AC OR DC L3 7 5 M AX ANY MOUNTING POSITION I BOTTOM VIEW SUBMINIATURE BUTTON g FLEXIBLE LEADS 1.5 " MIN.

Contextual Info: 2048 x 18 / 4096 x 18 S ynchrono us FIFOs FEATURES • May be Cascaded for Increased Depth, or Paralleled for Increased Width • Fast Cycle Times: 20/25/35 ns • 16 mA-IOL High-Drive Three-State Outputs • Pin-Compatible Drop-In Replacements for IDT72235B/45B FIFOs

Contextual Info: QS72215, QS72225 Q High-Speed. . .CMOS 512x 1 8, 1 K x 1 8 Parallel Clocked FIFO ne7, . 1c QS72215 QS72225 FEATURES • CMOS dual-port SRAM technology, 512 x 18 or 1024x 18 • Fast cycle times: 20/25/35 ns • Choice of standard or enhanced operating mode

Contextual Info: QS72215, QS72225 Q High-Speed CMOS 512 X 1 8 ,1K X 18 Parallel Synchronous FIFO QS72215 QS72225 FEATURES • Fast Cycle Times 20/25/35 ns • Pin-Compatible Drop-In Replacements for IDT72215LB/25LB FIFO's • Choice of Standard or Enhanced Operating Mode • Device Comes Up into One of Two Known Default

QD13

Contextual Info: I N T E GR AT ED DEVICE. 4 Û ES 77 1 00137=17 SÛ2 • IDT böE D CMOS SyncFlFO 256 X 18, 512 X 18, 1024 x 18, 2048 18 and 409 6 x 18 FEATURES: • • • • • 256 x 18-bit org a n iz a tio n array 7 2205LB 512 x 18-bit org a n iz a tio n array (7 2 2 1 5LB)

Contextual Info: SERIES 3188 Aluminum Electrolytic Capacitors Long-Life Com puter-Grade Aluminum Electrolytic Capacitors DESCRIPTION: Series 3 1 8 8 Long-Life Aluminum Electrolytic Capacitors are designed for those applications where a standard com puter-grade product must

SIT8103AC-13-33E-24.00000T

Abstract: s659
Contextual Info: IDT 72103 IDT 72104 CMOS PARALLEL-SERIAL FIFO 2048 x 9-BIT & 4096 x 9-BIT FEATURES: DESCRIPTION: • 35ns parallel port acc e ss time The IDT72103/72104 are high-speed Parallel-Serial FIFO s thal are ideally suited for serial communications, high-denslty media

KLEM4

Contextual Info:
   
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ddgt

Contextual Info: PLESSEY SEMICONDUCTORS TS D É 7EEDS13 DDGt.714 3 7 2 2 0 5 1 3 PLESSEY SEMICONDUCTORS At PLESSE Y PRELIMINARY INFORMATION S em iconductors. 1K WORD X M V 61901 9-BIT FIRST-IN FIRST-OUT MEMORY The MV6T901 is a dual port RAM that utilises a special First-In, First-Out algorithm that loads and empties data on a

Contextual Info: CMOS SERIAL-TO-PARALLEL FIFO 2048 x 9 4096 x 9 IDT72132 IDT72142 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • The IDT72132/72142 are high-speed, low-power serial-toparallel FIFOs. These FIFOs are ideally suited to serial communications applications, tape/disk controllers, and local

MS009 16 terminal

Contextual Info: MS009 •040”CENTER PACKAGE 9.3.2.36 V i ! A2 a d V Q N V iS' \ .003 £ 7 .004 PLANE 1 NOTES: 1. REFER TO A P PLIC A B LE SY M B O L LIST. 2. D IM E N S IO N IN G AN D TO LER A N C IN G PER AN SI Y14.5 1973. 3. M ETALLIZED C O R N E R CA STELLA T IO N S

gcu 101 setting manual

Abstract: sp8k10 2TT24 6-71-M52N0-D03 sp8k10s PCI7412 cd 208 PIR ED89 RSS090 st DB3 C502
Contextual Info: Preface Notebook Computer M520N/M521N Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

72284

Contextual Info: V A R IA B L E W ID T H S U P E R S Y N C FIF O 3 2 ,7 6 8 x 18 o r 6 5 ,5 3 6 x 9 6 5 ,5 3 6 x 18 o r 13 1 ,0 7 2 x 9 FEATURES: • Choose among the following memory organizations: IDT72284 32,768 x 18 or 65,536 x 9 IDT72294 65,536 x 18 or 131,072 x 9

Contextual Info: □RAWING N o ,:-M 7 5 8 0 /8 1 /8 2 /8 3 -X X S H E E T 2 OF 2 I F IN DOUBT - ASK NOT TO T H IR D A N G L E P R O J E C T IO N ALL D IM EN SIO N S 2.54- S E C T IO N A-A ORDER CODE: NOTES, 1, A L L T O L E R A N C E S ±0,20mm O N L E S S O T H E R W I S E STAT ED ,

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

Contextual Info: Super Fast Recovery Diode Single Diode w nnm o u tlin e DF10L60 P a c k a g e : S T O -2 2 0 60 0V 10A D a le c o d v * ^ U n it'm m Weight 15g T yp 10.2 (£> Control No Feature • SMD • SMD • SBEE • High Voltage • trr=50ns • trr-5 0 n s ¿TV"*

Contextual Info: FS98O24-DS-10_EN JAN 2010 Datasheet F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.0 FS98O24 Fo 8-bit MCU with 4k program EPROM, 256-byte RAM, 2 low noise OPAMP, DMM function network,1 14-bit ADC, 4 x 20 LCD driver and RTC FS98O24 Fo F P r R ro SC

Contextual Info: 3.3 VOLT CMOS SyncFlFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 My ’ ’ Integrated D<ïvice Technology, Inc. FEATURES: • • • • • • • • • • • • • • • • • 256 x 18-bit organization array IDT72V205 512 x 18-bit organization array (IDT72V215)

Contextual Info: FS98O24-DS-12_EN JUL 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.2 Datasheet FS98O24 8-bit MCU with 4k program EPROM, 256-byte RAM, 2 low noise OPAMP, DMM function network,1 14-bit ADC, 4 x 20 LCD driver and RTC FS98O24 FO Fo P R r R ro TU

Contextual Info: IBM038329DQ6 IBM038329PQ6 IBM038329NQ6 IBM038329QQ6 Preliminary 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on pos­ itive edge of system clock. • Internal pipelined operation; column address can be changed every clock cycle.

72284

Contextual Info: VARIABLE WIDTH CMOS SUPERSYNC FIFO 32,768 x 18 or 65,536 x 9 65,536 x 18 or 131,072 x 9 FEATURES: • Choose among the following memory organizations: IDT72284 32,768 x 18 or 65,536 x 9 IDT72294 65,536 x 18 or 131,072 x 9 • Pin-compatible with the IDT72261/72271, IDT72255/72265

diagram pc board ta 306-2

Abstract: BV EI 306 2070 PAL 0078 EL2070 EL2070C EL2070CN EL2070CS MIL-I-45208A QCX0002
Contextual Info: h ' ,~ e H K Æ t f A N C E A S A J X i '\ " E G W T £ ; C iR C J lT S EL2070C 200 MHz Current Feedback Am plifier F e a tu re s G e n e ra l D e sc r ip tio n • 200 MHz —3 dB bandwidth, Ay = 2 • Disable/enable • 12 ns settling to 0.05% The EL2070 is a wide bandwidth, fast settling monolithic am­

Hypertac connector

Abstract: HYPERTAC CONTACT PIN HYPERTAC CONNECTORS HYPERTAC PIN male contact solder pins hypertac hypertac right angle solder round pin connector EH101 esa 3401 K hypertac
Contextual Info: Impa opuscoli 1° 17-11-2000 14:51 Pagina 3 HYPERTAC INTERCONNECT WORLDWIDE PRESENCE TECHNICAL CHARACTERISTICS SPECIFICATION PPS per MIL-M-24519 meets ESA outgassing requirements MATERIAL Insulator Nickel plated brass or stainless steel Brass Guides 0.6 mm nominal