ST Z0 103 MA Search Results

MSA-0886-BLK

Contextual Info: [ X 3 | HEW LETT' ft "KM P A C K A R D Cascadable Silicon Bipolar MMIC Am plifier Technical Data MSA-0886 Features Description • U sable Gain to 5.5 GHz The MSA-0886 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a low cost,

ST Z0 103 MA

Contextual Info: What HEW LETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26884 F e atu res • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz • High Gain: 9.0 dB TypicalGssat 12 GHz • Low C ost P lastic Package • Tape-and-Reel Packaging

Contextual Info: ill# ICW 0RKS W149 4 4 0 BX A G Pset Spread Spectrum Frequency Synthesizer Features • Spread Spectrum feature always enabled • Maximized EMI suppression using IC WORKS’ Spread Spectrum Technology • l2C interface for programming • Power management control inputs

201 429 HP

Abstract: ATF-21186 ATF-21186-STR ATF-21186-TR1 0840 057 GLDB0 ga 1112
Contextual Info: TAff% HEW LETT mLftM P A C K A R D 0 .5 - 6 GHz G eneral P urpose G allium A rsenide FET Technical Data ATF-21186 Features Description • Low N o ise Figure: 0.5 dB Typ. @ 2 GHz • H igh O utpu t Pow er: 19 dBm Typ. P ldB @ 2 GHz • H igh MSG: 13.5 dB Typ. @ 2 GHz

Contextual Info: ill# ICW0RKS Preliminary W144 440BX AGPset Spread Spectrum Frequency Synthesizer • Supports frequencies up to 150MHz Features • Maximized EMI suppression using IC W O R K S ’ Spread Spectrum Technology • l2C interface for programming • Power management control inputs

5964-4069E

Abstract: sia 2297 pseudomorphic HEMT Transistor TT 2246 tt 95 n 12 ATF-36163 ATF-36163-BLK ATF-36163-TR1 M4475 ATF36163
Contextual Info: What H E W L E T T mL'timP A C K A R D 1 .5 -1 8 GHz Surface M ount Pseudom orphic HEMT Technical Data ATF-36163 F ea tu res Surface M ount Package • Low M inimum N o ise Figure: I dB Typical a t 12 GHz 0.6 dB Typical at 4 GHz • A sso cia te d Gain: 9.4 dB Typical at 12 GHz

Contextual Info: What HEWLETT* mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0186 Features Description • Cascadable 50 Q. Gain Block • 3 dB Bandwidth: DC to 0.9 GHz The MSA-0186 is a high perfor­ mance silicon bipolar Monolithic Microwave Integrated Circuit

Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/60 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

ST T4 0570

Abstract: 4894 HM 1211 BP317 philips MATV amplifiers
Contextual Info: Philips Semiconductors Preliminary specification Wideband amplifier module OM2083/60 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use in mast-head booster amplifiers, as an amplifier in MATV and CATV systems and as a general purpose amplifier for VHF

Contextual Info: Specification Date : Mar-22-2012 TO : Digi-Key Selling agency Approved by KYOCERA Corporation Electronic Components Sales Division 〒612-8501 6 Takeda Tobadono-cho, Fushimi-ku Kyoto 612-8501 TEL 075-604-3500, FAX 075-604-3501 Manufacturer KYOCERA KINSEKI Corporation

0/HT 1200-4 smd

Contextual Info: Specification Date : Mar-22-2012 TO : Digi-Key Selling agency Approved by KYOCERA Corporation Electronic Components Sales Division 〒612-8501 6 Takeda Tobadono-cho, Fushimi-ku Kyoto 612-8501 TEL 075-604-3500, FAX 075-604-3501 Manufacturer KYOCERA KINSEKI Corporation

BFQ28

Abstract: Q62702-F527 CJCO D 843 Transistor
Contextual Info: 5SE D fl23Sfc.GS aüG4hlt, 7 SIEG T- ?t^/ST BFQ28 Low Noise NPN Silicon Microwave Transistor up to 4 GHz SIEMENS AKTIENGESELLSCHAF BFQ 2 8 is a bipolar silicon NPN microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. State-of-the-art manufacturing methods

Contextual Info: Preliminary W145 ill# ICW 0RKS 440BX AGPSet Spread Spectrum Frequency Generator Features • Maximized EMI suppression using IC W O R KS’Spread Spectrum Technology • Single chip system FTG for Intei^ 440BX AGPset • • • • • • • Three copies of CPU output

tocp255k

Abstract: HFBR-4521 TOCP155 FSMA to ST FST Connectors MS100HU H4521 DIN127 DIN41626 F-05
Contextual Info: Ratioplast-Optoelectronics GmbH LWL-Werkzeug und Zubehör FO Tools and Accessories Maßzeichnung / Dimension Kurzbeschreibung / Description Knickschutztülle schwarz, für Kabel bis 3,6 mm, Länge: 29 mm Bend protection boot black, for cable up to 3.6 mm, length: 29 mm

Contextual Info: LSM330 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - production data Description The LSM330 is a system-in-package featuring a 3D digital accelerometer with two embedded state machines that can be programmed to implement autonomous applications and a 3D digital

PS 229

Abstract: ET-180
Contextual Info: C9834 Low EMI Clock Generator for Intel 810 Chipset / PentiumII and PentiumIII Systems Preliminary Product Features • • • • • • • • • • • • • • • • Block Diagram XIN ® Supports Pentium II and Pentium III processors

Contextual Info: ill# ICW 0RKS Advance Information W150 440BX AGPset Spread Spectrum Frequency Generator Features • Maximized EMI suppression using IC W O R KS’Spread Spectrum Technology • l2C interface for programming • Power m anagem ent control inputs • Single chip system FTG for InteP 440BX AGPset

UM9441 UM9442

Abstract: UMM5050 NKT 0039 HUM4020 NTE Semiconductor Technical Guide and Cross Refer wireless mobile charging through microwaves MSC 9415 hf power combiner broadband transformers mpd101 Structure rotary phase shifter
Contextual Info: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of

Transistor TT 2246

Contextual Info: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz

philips ferrite 4b1

Abstract: philips ferrite core 4b1 MEA200 3122 108 339 3 1 philips MATV amplifiers OM2063 SC16 gt 6312 UHF amplifier module
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET OM2063 Wideband amplifier module Product specification Supersedes data of June 1991 File under Discrete Semiconductors, SC16 1995 Nov 28 Philips Semiconductors Product specification Wideband amplifier module OM2063 DESCRIPTION

UM9442

Abstract: UMM5050 MSC 9415 pin diodes radiation detector MSC 501 302 diode PIN DIODE DRIVER CIRCUITS "Microwave Diode" UM9441 Microwave PIN diode hf power combiner broadband transformers
Contextual Info: Microsemi-Watertown THE PIN DIODE CIRCUIT DESIGNERS’ HANDBOOK The PIN Diode Circuit Designers’ Handbook was written for the Microwave and RF Design Engineer. Microsemi Corp. has radically changed the presentation of this PIN diode applications engineering material to increase its usefulness to Microwave and RF Circuit Designers. A major part of

Contextual Info: LSM6DS1 iNEMO inertial module: 3D accelerometer and 3D gyroscope Datasheet - preliminary data Description The LSM6DS1 is a system-in-package featuring a 3D digital accelerometer and a 3D digital gyroscope. ST’s family of MEMS sensor modules leverages the robust and mature manufacturing

ablebond 88-1

Abstract: Ablebond 968 Ablebond
Contextual Info: Agilent AMMC-5026 2–35 GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Features • Frequency range: 2 – 35 GHz • Gain: 10.5 dB • Gain flatness: ± 0.8 dB • Return loss: Input 17 dB, Output: 15 dB • Output power P-1dB : 24 dBm at 10 GHz 23 dBm at 20 GHz

Ablebond 968

Abstract: AMMC-5026 HMMC-5026 ABLEBONd 86
Contextual Info: Agilent AMMC-5026 2–35 GHz GaAs MMIC Traveling Wave Amplifier Data Sheet Features • Frequency range: 2 – 35 GHz • Gain: 10.5 dB • Gain flatness: ± 0.8 dB • Return loss: Input 17 dB, Output: 15 dB • Output power P-1dB : 24 dBm at 10 GHz 23 dBm at 20 GHz