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    ST16N10

    Abstract: No abstract text available
    Text: ST25N10 N Channel Enhancement Mode MOSFET 25.0A DESCRIPTION ST25N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using


    Original     		PDF ST25N10 ST25N10 ST16N10 O-252 00V/12 00V/10 O-252

    ST16N10

    Abstract: 16N10 n channel enhancement MOSFET n channel Stanson Technology MOSFET MARKING ST st 16n10 DSA001077 mosfet low idss TO-251 Package
    Text: ST 16N10 ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using


    Original     		PDF ST16N10 ST16N10 O-252 O-251 O-252 O-251 16N10 n channel enhancement MOSFET n channel Stanson Technology MOSFET MARKING ST st 16n10 DSA001077 mosfet low idss TO-251 Package