AS080447-33N
Abstract: l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85006L-E PD85035S-E
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
AS080447-33N
l0422
IA2410
C22A
c2f sot
AS120252-9R3N
IA4910
C2F SOT23
PD85035S-E
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STAP85050
Abstract: No abstract text available
Text: STAP85050 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 15.4 dB gain @ 520 MHz / 13.6 V ■ Plastic package ■ ESD protection
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Original
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PDF
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STAP85050
2002/95/EC
PowerSO-10RF
STAP85050
ID15507
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MA4P7436-1141T
Abstract: AS080447-33N IA2410 AS120252-9R3N PD85006L-E SOT323-5 C1P SOT23 GRM42-6 COG c6p SOT23 PD85035s-e
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Data brief Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A
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Original
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PDF
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
MA4P7436-1141T
AS080447-33N
IA2410
AS120252-9R3N
SOT323-5
C1P SOT23
GRM42-6 COG
c6p SOT23
PD85035s-e
|
ia2410
Abstract: No abstract text available
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm
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Original
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PDF
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
ia2410
|
Untitled
Abstract: No abstract text available
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm
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Original
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PDF
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
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STAP85050
Abstract: No abstract text available
Text: STAP85050 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Target specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 15.4 dB gain @ 520 MHz / 13.6 V ■ Plastic package
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Original
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PDF
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STAP85050
2002/95/EC
STAP85050
ID15507
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STAP85050
Abstract: J-STD-020B
Text: STAP85050 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 70 W with 15.4 dB gain @ 520 MHz / 13.6 V ■ Plastic package
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Original
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PDF
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STAP85050
2002/95/EC
STAP85050
J-STD-020B
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STAP85050
Abstract: Multimeter service manual PD85006L-E "RF Power Amplifier" amplifier diagram C14A china mobile main board METAL DETECTOR circuit for make metal detector schematic schematic diagram power amplifier free download
Text: UM0890 User manual 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Introduction This user manual briefly describes the function and use of the STEVAL-TDR011V1 demonstration board. The board is a two-stage 50 W RF power amplifier which includes an output LPF low-pass
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UM0890
PD85006L-E
STAP85050
STEVAL-TDR011V1
STEVAL-TDR011V1
Multimeter service manual
"RF Power Amplifier"
amplifier diagram
C14A
china mobile main board
METAL DETECTOR circuit for make
metal detector schematic
schematic diagram power amplifier free download
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