STEALTH Search Results

Contextual Info: ISL9R1560PF2 15A, 600V, STEALTH Diode Feature Description • Stealth Recovery trr = 29.4 ns @ IF = 15 A The ISL9R1560PF2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse

Contextual Info: FFPF15S60S 15 A, 600 V, STEALTHTM II Diode Features Description • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFPF15S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: FFP15S60S 15 A, 600 V, STEALTH II Diode Features Description • Stealth Recovery Trr = 35 ns @ IF = 15 A The FFP15S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as

Contextual Info: ISL9K1560G3 30 A, 600 V STEALTH Dual Diode Features Description • Stealth Recovery trr = 29.4 ns @ IF = 15 A The ISL9K1560G3 is a STEALTH™ dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family

Contextual Info: ISL9R460PF2 4 A, 600 V, STEALTHTM Diode Features Description • Stealth Recovery trr = 17 ns @ IF = 4 A The ISL9R460PF2 is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and

Contextual Info: ISL9K460P3 8 A, 600 V, STEALTHTM II Diode Features Description • Stealth Recovery trr = 17 ns @ IF = 4 A The ISL9K460P3 is a STEALTH dual diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse

Contextual Info: ISL9R860PF2 8 A, 600 V, STEALTHTM Diode Features Description • Stealth Recovery trr = 28 ns @IF = 8 A The ISL9R860PF2 is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and

IRF840

Abstract: ISL9R860S2 TB334
Contextual Info: ISL9R860S2 May 2001 Data Sheet 8A, 600V Stealth Diode Features itle UF7 3P The ISL9R860S2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

IRF840

Abstract: ISL9R460S2 TA49408 TB334
Contextual Info: ISL9R460S2 May 2001 Data Sheet 4A, 600V Stealth Diode Features itle UF7 3P The ISL9R460S2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

K3060g3

Contextual Info: ISL9K3060G3 30A, 600V Stealth Dual Diode General Description Features The ISL9K3060G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft

Contextual Info: ISL9R460P2 Data Sheet FINAL DRAFT Title URP 60 bt A, 0V rafa ode) utho eyrds ter- ts, ctirs, ft 5031 Features The ISL9R460P2 is a Stealth diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

30N6S2D

Contextual Info: FGH30N6S2D / FGP30N6S2D / FGB30N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs

F08S60S

Contextual Info: FFPF08S60S Stealth2 Diode tm Features 8A, 600V Stealth2 Diode • High Speed Switching Max. trr<30ns @ IF=8A The FFPF08S60S is stealth rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial

r18120g2

Abstract: R18120S3 R18120P R18120P2 igbt 6.5 kv snubber R18120G ISL9R18120P2 ISL9R18120S3ST
Contextual Info: ISL9R18120G2 / ISL9R18120P2 / ISL9R18120S3S 18A, 1200V Stealth Diode General Description Features The ISL9R18120G2, ISL9R18120P2 and ISL9R18120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family

8587

Abstract: SSPA
Contextual Info: SL Series LABORATORY MODEL Description: Stealth Microwave’s SL Series bench-top lab units can accommodate any Stealth Microwave SSPA module. The unit features a built in AC supply, control circuitry, and forced air cooling, all contained in a rugged housing to allow for ease of

cpe wimax

Abstract: CONNECTOR SMA-f power amplifier WiMAX bi-directional switches
Contextual Info: Model SMTR2327-44 2.3-2.7 GHz Bi-Directional WiMAX Power Amplifier Stealth Microwave’s SMTR2327-44 is a solid state bi-directional amplifier for use in 802.16e TDD products and systems. This compact, high linearity PA can easily be integrated into both BTS or CPE devices,

ISL9H2060EG3

Abstract: LD26 igbt 400V 20A
Contextual Info: ISL9H2060EG3 Data Sheet Title L9 060 3 bjec 0V, MPS LGC ries ann BT h tialle 600V, SMPS II LGC Series N-Channel IGBT with Anti-Parallel StealthTM Diode The ISL9H2060EG3 is a Low Gate Charge LGC) SMPS II IGBT combining the fast switching speed of the SMPS

Contextual Info: FFP30S60S 30 A, 600 V STEALTHTM II Diode Features Description • Stealth Recovery trr = 40 ns @ IF = 30 A The FFP30S60S is a STEALTH II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

SMTR2425-11G38

Abstract: 11-G-3
Contextual Info: Model SMTR2425-11G38 2.4-2.5 GHz 6W Bi-Directional Power Amplifier Stealth Microwave’s SMTR2425-11G38 is a solid state amplifier for use in 802.11g WLAN systems. This SSPA utilizes state of the art LDMOS FET transistors which allow for more efficient operation while still

Contextual Info: STEALTH II Rectifier FFP08S60S tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 30ns @ IF=8A • High Reverse Voltage and High Reliability The FFP08S60S is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: ISL9R8120P2 / ISL9R8120S3S 8A, 1200V Stealth Diode General Description Features The ISL9R8120P2 and ISL9R8120S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRM(REC and exceptionally soft

Contextual Info: ISL9R860PF2 8A, 600V Stealth Diode General Description Features The ISL9R860PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery

Contextual Info: ISL9K1560G3 15A, 600V Stealth Dual Diode General Description Features The ISL9K1560G3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current

50n6s2d

Abstract: FGH50N6S2D 50n6s2 LD26 150a 400v diode bridge fgh50n6s
Contextual Info: FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau