STEP DOWN TRANSFORMER FOOTPRINT Search Results

STEP DOWN TRANSFORMER FOOTPRINT Result Highlights (5)

Part	Manufacturer	Description
TB67S580FNG	Toshiba Electronic Devices & Storage Corporation	Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6
TB67S581FNG	Toshiba Electronic Devices & Storage Corporation	Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5
TB62213AFNG	Toshiba Electronic Devices & Storage Corporation	Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=3/Phase Interface
TB62215AFNG	Toshiba Electronic Devices & Storage Corporation	Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=3/Clock Interface
TB62261FTG	Toshiba Electronic Devices & Storage Corporation	Stepping Motor Driver/Bipolar Type/Vout(V)=40/Iout(A)=1.8/Phase Interface

STEP DOWN TRANSFORMER FOOTPRINT Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
step down transformer Abstract: step down transformer 12 MABA-011002 step down transformer footprint Contextual Info: MABA-011002 4:1 Step Down Transformer 5 - 200 MHz Rev. V1 Features • Surface Mount  4:1 Step Down Transformer  Excellent performance under DC bias current, even when current flows is imbalanced out outputs  260°C Reflow Compatible  RoHS* Compliant, lead free	Original	MABA-011002 step down transformer step down transformer 12 MABA-011002 step down transformer footprint	PDF
PS2811-1-M Abstract: RLF7030T-2R2M5R4 zener 8.2V vishay resistor 0603 1 0.1W MMBT6429LT1G ser2010-122mx Z4 SOT23 AN2043 PS2811-1M tdk Isolators Contextual Info: National Semiconductor Application Note 2043 Ajay Hari March 18, 2010 Introduction LO modulating power switches with independent pulse width timing. The main difference between the topologies are, the Half Bridge topology employs a transformer to provide input / output ground isolation and a step down or step up	Original	AN-2043 PS2811-1-M RLF7030T-2R2M5R4 zener 8.2V vishay resistor 0603 1 0.1W MMBT6429LT1G ser2010-122mx Z4 SOT23 AN2043 PS2811-1M tdk Isolators	PDF
TDK C1608COG Abstract: C1608COG RLF7030T-2R2M5R4 1H682J AN1755 48V 100W zener diode BAT54BRW C2012X7R1C225K P8208 1E223 Contextual Info: National Semiconductor Application Note 1755 Steve Schulte January 15, 2008 Introduction LO modulating power switches with independent pulse width timing. The main difference between the topologies are, the Half Bridge topology employs a transformer to provide input / output ground isolation and a step down or step up	Original	AN-1755 TDK C1608COG C1608COG RLF7030T-2R2M5R4 1H682J AN1755 48V 100W zener diode BAT54BRW C2012X7R1C225K P8208 1E223	PDF
Contextual Info: Preliminary Sampling Phase Detectors SPD1101-111, SPD1102-111, SPD1103-111 Features • For Phase Locked VCOs to 22 GHz ■ Reference Frequencies Below 50 MHz ■ New Surface Mount Package Design ■ Small Footprint 90 x 110 Mils ■ Automated Chip on Board Construction	Original	SPD1101-111, SPD1102-111, SPD1103-111 SPD1101-111 9/01A	PDF
Microwave detector diodes Abstract: step recovery diode Sampling Phase Detectors step down transformer footprint "step recovery diode" 1.7 pf step down transformer SPD1102-111 Microwave detector diodes 18 GHz SP*D1100 SPD1101 Contextual Info: Preliminary Sampling Phase Detectors SPD1101-111, SPD1102-111, SPD1103-111 Features • For Phase Locked VCOs to 22 GHz ■ Reference Frequencies Below 50 MHz ■ New Surface Mount Package Design ■ Small Footprint 90 x 110 Mils ■ Automated Chip on Board Construction	Original	SPD1101-111, SPD1102-111, SPD1103-111 SPD1101-111 9/01A Microwave detector diodes step recovery diode Sampling Phase Detectors step down transformer footprint "step recovery diode" 1.7 pf step down transformer SPD1102-111 Microwave detector diodes 18 GHz SP*D1100 SPD1101	PDF
Sampling Phase Detectors Abstract: 27 mhz oscillator Contextual Info: DETECTORS DATA SHEET SPD1101-111, SPD1102-111, SPD1103-111: Sampling Phase Detectors Features Schematic Diagram For phase locked VCOs to 22 GHz ● Reference frequencies below 50 MHz ● New surface mount package design ● Small footprint 90 x 110 mils	Original	SPD1101-111, SPD1102-111, SPD1103-111: SPD1102-111 SPD1103-111, Sampling Phase Detectors 27 mhz oscillator	PDF
smd diode marking sG Abstract: smd marking m4 smd fuse marking 20 VTM 48 D496 D505 V048F320M009 V048F320T009 Contextual Info: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2	Original	V048F320T009 V048F320M009 V048F320T009 smd diode marking sG smd marking m4 smd fuse marking 20 VTM 48 D496 D505 V048F320M009	PDF
smd marking m4 Abstract: smd diode marking sG VTM 48 D496 D505 V048F015T100 Contextual Info: V048F015T100 V048F015M100 VTM VTMTM Transformer • 48 V to 1.5 V V•I ChipTM Converter • 125°C operation TJ • 100.0 A (150.0 A for 1 ms) • 1 µs transient response • High density – 339 A/in3 • 3.5 million hours MTBF • Small footprint – 80 A/in2	Original	V048F015T100 V048F015M100 V048F015T100 smd marking m4 smd diode marking sG VTM 48 D496 D505	PDF
VTM 48 Abstract: D496 D505 V048F040M050 V048F040T050 Contextual Info: V048F040T050 V048F040M050 VTM VTMTM Transformer • 48 V to 4 V V•I ChipTM Converter • 125°C operation TJ • 50 A (75.0 A for 1 ms) • 1 µs transient response • High density – 169 A/in3 • 3.5 million hours MTBF • Small footprint – 40 A/in2	Original	V048F040T050 V048F040M050 V048F040T050 VTM 48 D496 D505 V048F040M050	PDF
Contextual Info: V048F080T030 V048F080M030 VTM VTMTM Transformer • 48 V to 8 V V•I ChipTM Converter • 125°C operation TJ • 30 A (45.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2	Original	V048F080T030 V048F080M030 V048F080T030	PDF
Contextual Info: V048F160T015 V048F160M015 VTM VTMTM Transformer • 48 V to 16 V V•I ChipTM Converter • 125°C operation TJ • 15 A (22.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2	Original	V048F160T015 V048F160M015 V048F160T015	PDF
TRANSFORMER 6200 Abstract: D496 D505 V048F240T012 Contextual Info: V048F240T012 V048F240M012 VTM VTMTM Transformer • 48 V to 24 V V•I ChipTM Converter • 125°C operation TJ • 12.5 A (18.8 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2	Original	V048F240T012 V048F240M012 V048F240T012 TRANSFORMER 6200 D496 D505	PDF
smd marking m4 Abstract: VTM 48 D496 D505 V048F096M025 V048F096T025 Contextual Info: V048F096T025 V048F096M025 VTM VTMTM Transformer • 48 V to 9.6 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2	Original	V048F096T025 V048F096M025 V048F096T025 smd marking m4 VTM 48 D496 D505 V048F096M025	PDF
mS25a Abstract: ic sc 6200 D496 D505 V048F120M025 V048F120T025 chip transformer Contextual Info: V048F120T025 V048F120M025 VTM VTMTM Transformer • 48 V to 12 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2	Original	V048F120T025 V048F120M025 V048F120T025 mS25a ic sc 6200 D496 D505 V048F120M025 chip transformer	PDF

Contextual Info: V048F096T025 V048F096M025 VTM VTMTM Transformer • 48 V to 9.6 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2	Original	V048F096T025 V048F096M025 V048F096T025	PDF
Contextual Info: V048F015T100 V048F015M100 VTM VTMTM Transformer • 48 V to 1.5 V V•I ChipTM Converter • 125°C operation TJ • 100.0 A (150.0 A for 1 ms) • 1 µs transient response • High density – 339 A/in3 • 3.5 million hours MTBF • Small footprint – 80 A/in2	Original	V048F015T100 V048F015M100 V048F015T100	PDF
Contextual Info: V048F040T050 V048F040M050 VTM VTMTM Transformer • 48 V to 4 V V•I ChipTM Converter • 125°C operation TJ • 50 A (75.0 A for 1 ms) • 1 µs transient response • High density – 169 A/in3 • 3.5 million hours MTBF • Small footprint – 40 A/in2	Original	V048F040T050 V048F040M050 V048F040T050	PDF
Contextual Info: V048F020T080 V048F020M080 VTM VTMTM Transformer • 48 V to 2 V V•I ChipTM Converter • 125°C operation TJ • 80.0 A (120.0 A for 1 ms) • 1 µs transient response • High density – 271 A/in3 • 3.5 million hours MTBF • Small footprint – 70 A/in2	Original	V048F020T080 V048F020M080 V048F020T080	PDF
VTM 48 Abstract: D496 D505 V048F020T080 Contextual Info: V048F020T080 V048F020M080 VTM VTMTM Transformer • 48 V to 2 V V•I ChipTM Converter • 125°C operation TJ • 80.0 A (120.0 A for 1 ms) • 1 µs transient response • High density – 271 A/in3 • 3.5 million hours MTBF • Small footprint – 70 A/in2	Original	V048F020T080 V048F020M080 V048F020T080 VTM 48 D496 D505	PDF
smd marking m4 Abstract: smd diode marking sG VTM 48 D496 D505 V048F160M015 V048F160T015 Contextual Info: V048F160T015 V048F160M015 VTM VTMTM Transformer • 48 V to 16 V V•I ChipTM Converter • 125°C operation TJ • 15 A (22.5 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2	Original	V048F160T015 V048F160M015 V048F160T015 smd marking m4 smd diode marking sG VTM 48 D496 D505 V048F160M015	PDF
smd marking m4 Abstract: smd fuse marking 20 VTM 48 D496 D505 Contextual Info: V048F080T030 V048F080M030 VTM VTMTM Transformer • 48 V to 8 V V•I ChipTM Converter • 125°C operation TJ • 30 A (45.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2	Original	V048F080T030 V048F080M030 V048F080T030 smd marking m4 smd fuse marking 20 VTM 48 D496 D505	PDF
Contextual Info: V048F120T025 V048F120M025 VTM VTMTM Transformer • 48 V to 12 V V•I ChipTM Converter • 125°C operation TJ • 25 A (37.5 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2	Original	V048F120T025 V048F120M025 V048F120T025	PDF
Contextual Info: V048F320T009 V048F320M009 VTM VTMTM Transformer • 48 V to 32 V V•I ChipTM Converter • 125°C operation TJ • 9.4 A (14.1 A for 1 ms) • 1 µs transient response • High density – 1017 W/in3 • 3.5 million hours MTBF • Small footprint – 260 W/in2	Original	V048F320T009 V048F320M009 V048F320T009	PDF
Contextual Info: V048F060T040 V048F060M040 VTM VTMTM Transformer • 48 V to 6 V V•I ChipTM Converter • 125°C operation TJ • 40 A (60.0 A for 1 ms) • 1 µs transient response • High density – 813 W/in3 • 3.5 million hours MTBF • Small footprint – 210 W/in2	Original	V048F060T040 V048F060M040 V048F060T040	PDF

STEP DOWN TRANSFORMER FOOTPRINT Search Results

STEP DOWN TRANSFORMER FOOTPRINT Result Highlights (5)

STEP DOWN TRANSFORMER FOOTPRINT Datasheets Context Search

step down transformer

PS2811-1-M

TDK C1608COG

Microwave detector diodes

Sampling Phase Detectors

smd diode marking sG

smd marking m4

VTM 48

TRANSFORMER 6200

smd marking m4

mS25a

VTM 48

smd marking m4

smd marking m4