STEWARD 35F0121 Search Results

35F0121

Abstract: 35F0121-1SR-10 STEWARD 35F0121
Contextual Info: 35F0121-1SR-10 Pb Ω Ω 120 UNCONTROLLED DOCUMENT Ω 100 0amp 80 1amp 2amp 60 3amp 4amp 40 5amp 20 1 10 100 1000 120 Ω 100 80 Z 60 R 40 XL 20 1 10 Z 100 R 1000 10000 XL Steward

35F0121-0SR-10

Abstract: STEWARD 35F0121
Contextual Info: 35F0121-0SR-10 UNCONTROLLED DOCUMENT Pb Ω Ω 60 Ω 50 40 0amp 1amp 2amp 30 3amp 4amp 20 5amp 10 1 10 100 1000 60 Ω 50 40 30 Z 20 R XL 10 1 10 Z 100 R 1000 10000 X L Steward

35F0121-1SR-10

Contextual Info: PH YSIC AL DIMENSIONS: A 3.05 [.120] ± B ± 0.08 [.003] 2.54 [.100] 35F0121-1SR-10 0.08 [.003] Bi 3.05 [.120] E L E C T R IC A L C H A R A C T E R IST IC S: C 8.51 [.335] ± 0.23 [.009] Ci 9.53 [.375] + MAX WIRE DIMENSIONS: Ti 1.27 [.050] T2 1.52 [.060] REF.

Contextual Info: PH YSIC AL DIMENSIONS: A 3.05 [.120] ± B ± 0.08 [.003] 2.54 [.100] 35F0121-1SR-10 0.08 [.003] Bi 3.05 [.120] E L E C T R IC A L C H A R A C T E R IST IC S: C 8.51 [.335] ± 0.23 [.009] Ci 9.53 [.375] + MAX WIRE DIMENSIONS: Ti 1.27 [.050] T2 1.52 [.060] REF.

35F0121

Contextual Info: 35F0121-0SR-10 PHYSICAL DIMENSIONS: A 3 .0 5 [.1 2 0 ] ± 0 .0 8 [.0 0 3 ] B 2 .5 4 [.1 0 0 ] ± 0 .0 8 [.0 0 3 ] Bi 3 . 0 5 [ . 1 2 0 ] ± C - 4 .0 6 Ci 5 . 0 8 [.1 6 0 ] E L E C T R IC A L C H A R A C T E R IS T IC S : z MAX 0 .1 0 [ . 0 0 4 ] N o m in a l

CART121-03

Contextual Info: 35F0121-0SR-10 PHYSICAL DIMENSIONS: A 3 .0 5 [.1 2 0 ] B 2 .5 4 [.1 0 0 ] ± 0 .0 8 [.0 0 3 ] ± 0 .0 8 [.0 0 3 ] Bi 3 . 0 5 [ . 1 2 0 ] + MAX C + ELECTRICAL CHARACTERISTICS: z 4 .0 6 [.1 6 0 ] - 0 .1 0 [ . 0 0 4 ] Ci 5 . 0 8 [.2 0 0 ] - MAX N om inal M in im u m

25F0121-0SR

Abstract: phillips PM2811 28F0121 28F0121-0SR 25F0121-1SR STEWARD 35F0121 TME 57
Contextual Info: EMI-Hi Current SMT Bead Table Single Line Surface Mount Chokes Mounting: SMT Ambient Temperature Range: -55 ° C to +125 ° C Mode: Differential Typical Impedance z ohms Part No. Package Size Mounting 25F0121-1SR 0121 SMT 28F0121-1SR 0121 SMT 35F0121-1SR

35F0121-1SR-10

Abstract: ATC100B620 ERJ-3GEY0R00 eeafc1e100 bifet amplifier discrete schematic GaN TRANSISTOR
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology   

28F0181-1SR-10

Abstract: CAPACITOR 150 RED
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

GaN hemt

Abstract: power transistor gan s-band air surveillance system diagram using radar
Contextual Info: RF3928 RF3928280 W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

ATC100B620

Abstract: L22 amplifier Gan hemt transistor RFMD
Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

thermocouple gaas

Contextual Info: RF3928 RF3928280W GaN WIDEBAND PULSED POWER AMPLIFIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology    RF IN

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

SEMICONDUCTOR J598

Abstract: rfha
Contextual Info: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

Contextual Info: RFHA1023 RFHA1023 225W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high

RF3928B

Abstract: power transistor gan s-band RF392
Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

ECJ2VB1H104K

Abstract: air surveillance system diagram using radar Gan hemt transistor RFMD 28F0181-1SR-10
Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse

c11cf

Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse

Contextual Info: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier Package: Flanged Ceramic, 2-Pin The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high

Contextual Info: RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 

Contextual Info: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse

Contextual Info: RF3928B RF3928B 380W GaN WIDEBAND PULSED POWER AMPLIFIER 380W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features  Wideband Operation 2.8GHz to 3.4GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 