STGW30 Search Results

Contextual Info: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220

Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction

STGW30NB60H

Contextual Info: STGW30NB60H N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT TYPE STGW30NB60H • ■ ■ ■ ■ ■ V CES V CE sat IC 600 V < 2.8 V 30 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)

GW30NC60W

Contextual Info: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 High frequency operation 1 Lower CRES / CIES ratio (no cross-conduction

Contextual Info: STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 30 A

Contextual Info: STGW30NC60WD 30 A, 600 V ultra fast IGBT Features • High frequency operation ■ Lower CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls, inverters, UPS

IFP260

Abstract: STGW30H60DF GP30H STGB30H60DF STGF3
Contextual Info: STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 3 1 D²PAK 2 • Safe paralleling • Low thermal resistance

GW30V60DF

Abstract: STGW30V60DF STGWT30V60DF GWT30V60DF igbt welding circuit ESCC
Contextual Info: STGW30V60DF STGWT30V60DF 600 V, 30 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C  Very high speed switching series  Tail-less switching off 2 3 3 1 2 1 TO-247  Low saturation voltage: VCE sat = 1.85 V (typ.)

GW30NC120HD

Abstract: STGW30NC120HD schematic diagram induction heating JESD97 W313 9915 H
Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

GW30N90D

Abstract: JESD97 STGW30N90D
Contextual Info: STGW30N90D N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT Preliminary Data Features Type VCES VCE sat @25°C IC @100°C STGW30N90D 900V < 2.75V 30A • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

STGW30NB60HD

Contextual Info: STGW30NB60HD N-CHANNEL 30A - 600V - TO-247 PowerMESH IGBT TYPE VCES VCE sat (Max) IC STGW30NB60HD 600 V < 2.8 V 30 A • ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY

GWT30V60DF

Abstract: GW30V60DF
Contextual Info: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF 600 V, 30 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 3 1 1 D²PAK TO-220

GW30NC60VD

Abstract: STGW30NC60VD schematic diagram UPS schematic diagram UPS 600 Power free schematic diagram UPS inverter
Contextual Info: STGW30NC60VD 40 A, 600 V, very fast IGBT Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 Very fast PowerMESH IGBT General features Type VCES VCE sat @125°C IC @100°C 1.9V 30A STGW30NC120HD 1200V • Low on-losses ■ Low on-voltage drop(Vcesat) ■ High current capability ■ High input impedance(voltage driven)

IGBT STGW30NC60W

Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A High frequency operation 2 3 3 Lower CRES / CIES ratio (no cross-conduction

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

30NB60H

Abstract: STGW30NB60H
Contextual Info: STGW30NB60H  N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT T YPE STGW 30NB60H • ■ ■ ■ ■ ■ V CES V CE sat IC 600 V < 2.8 V 30 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION

30nb60hd

Abstract: TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE STGW30NB60HD STTA2006
Contextual Info: STGW30NB60HD  N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT T YPE V CES V CE sat IC STGW 30NB60HD 600 V < 2.8 V 30 A • ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY

W30NC60W

Abstract: ST IGBT code marking STGW30NC60W JESD97 Marking STMicroelectronics TO 247
Contextual Info: STGW30NC60W N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT Target Specification General features • Package Type VCES VCE sat (Max)@ 25°C IC @100°C STGW30NC60W 600 V < 2.5 V 30 A VERY LOW OFF LOSSES INCLUDING TAIL CURRENT 3 2 1 ■

GW30N120KD

Abstract: JESD97 STGW30N120KD
Contextual Info: STGW30N120KD 30 A - 1200 V - short circuit rugged IGBT Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 2 3 1 Application ■ TO-247

STGW30NC60W

Abstract: STGP30NC60W GW30NC60W GP30NC60W JESD97 STGB30NC60W STGB30NC60WT4
Contextual Info: STGB30NC60W - STGP30NC60W STGW30NC60W 30 A - 600 V - ultra fast IGBT Features • High frequency operation ■ Lower CRES / CIES ratio no cross-conduction susceptibility 2 Applications ■ ■ 3 3 1 1 TO-247 High frequency motor controls, inverters, ups

STGW30NC120HD

Abstract: GW30NC120HD JESD97
Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)