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    STGW80H65DFB Search Results

    STGW80H65DFB Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    STGW80H65DFB
    		STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 120A 469W TO-247 Original PDF 19
    STGW80H65DFB-4
    		STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT BIPO 650V 80A TO247 Original PDF 768.65KB
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    STMicroelectronics STGW80H65DFB

    IGBT TRENCH FS 650V 120A TO-247
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    DigiKey STGW80H65DFB Tube 1
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    Avnet Americas STGW80H65DFB Tube 15 Weeks 600
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    Verical () STGW80H65DFB 82,800 600
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    STGW80H65DFB 1,212 2
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    Arrow Electronics () STGW80H65DFB 82,800 15 Weeks 600
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    STGW80H65DFB 1,213 15 Weeks 1
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    Newark STGW80H65DFB Bulk 2,832 1
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    STMicroelectronics STGW80H65DFB 1
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    Quest Components STGW80H65DFB 2
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    TME STGW80H65DFB 175 1
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    Avnet Silica STGW80H65DFB 1,200 16 Weeks 30
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    Win Source Electronics STGW80H65DFB 6,000
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    STMicroelectronics STGW80H65DFB-4

    IGBT TRENCH FS 650V 120A TO-247
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    DigiKey STGW80H65DFB-4 Tube 600
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    Mouser Electronics STGW80H65DFB-4 290
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    STMicroelectronics STGW80H65DFB-4 290 1
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    TME STGW80H65DFB-4 1
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    Avnet Silica STGW80H65DFB-4 16 Weeks 30
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    Win Source Electronics STGW80H65DFB-4 9,180
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    ACTIVE COMPNTS/DIODES STGW80H65DFB

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    Bisco Industries STGW80H65DFB 25
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    STGW80H65DFB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original     		STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 PDF

    Contextual Info: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V


    Original     		STGW80H65DFB STGWT80H65DFB O-247 DocID024366 PDF

    gy-80

    Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original     		STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 gy-80 PDF

    GWT80H65DFB

    Abstract: stgwt80h65dfb STGW80H65DFB ST IGBT code marking stgwt80h65
    Contextual Info: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current 2  Very low saturation voltage: VCE sat = 1.65 V


    Original     		STGW80H65DFB STGWT80H65DFB O-247 DocID024366 GWT80H65DFB stgwt80h65dfb ST IGBT code marking stgwt80h65 PDF

    Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, H series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current


    Original     		STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Max247 O-247 DocID024366 PDF