STH15 Search Results

15n50

Abstract: STH15N50 STW15N50 STH15N50FI ISOWATT218
Contextual Info: _71S1237 QG45T2fl T33 • S G T H STH15N50/FI STW15N50 SGS-THOMSON ilIO T « ! N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH15N50 STH15N50FI STW 15N50 . ■ . . ■ . V dss RDS on Id 500 V 500 V 500 V < 0.4 Î2 < 0.4 n < 0.4 fi 15 A 9 .3 A

15NA50

Contextual Info: ¿57 TYP E STH15NA50 STH15NA50FI STW 15NA50 S GS-THOMSON ¡[LiCTIiMOOS STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss RDS on Id 500 V 500 V 500 V < 0.4 a < 0.4 a < 0.4 Q. 14.6 A 9.3 A 14.6 A • TYPICAL RDS(on) = 0.33 Q.

uc3843 12v to 24v

Abstract: uc3842 half bridge forward converter UC3843 uc3845 half bridge mc34063 5v 4A uc3842 200w uc3843 12v to 40v stepdown uc3842 uc3844 100w uc3842 full bridge
Contextual Info: POWER SUPPLIES HIGH POWER FULL & HALF BRIDGE CONVERTER RECTIFICATION BRIDGES Type OUTPUT POWER AC < 1000W 110V 220V 380V ▲ STP11NB40▲ STP10NA40/FI STW16NA40 STW15NB50▲ STU14NA50▲ STW20N350▲ STH15NA50FI STP9NB50/FI▲ STP8NA50/FI STP6NB50▲ STW12NA50

STH155N75F4-2

Abstract: TO220-5 footprint STP155N75F4
Contextual Info: STH155N75F4-2 STP155N75F4 N-channel 75 V, 4.2 mΩ, 160 A TO-220, H2PAK StripFET DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID STP155N75F4 75 V 5.8 mΩ 120 A STH155N75F4-2 75 V 5.2 mΩ 160 A 2 3 • ■ Extremely low on-resistance RDS(on)

150N10F7

Contextual Info: STH150N10F7-2 N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET VII DeepGATE™ Power MOSFET in a H2PAK-2 package Datasheet − preliminary data Features Order code VDS RDS on max STH150N10F7-2 100 V 0.0039 Ω ID PTOT 110 A 250 W • 100% avalanche tested

Contextual Info: STH150N10F7-2, STP150N10F7 N-channel 100 V, 0.0038 Ω typ., 90 A, STripFET VII DeepGATE™ Power MOSFET in H2PAK-2 and TO-220 packages Datasheet − preliminary data Features Order codes 7$% STH150N10F7-2 TAB STP150N10F7 3  H2PAK-2  RDS on max 100V 0.0045 Ω

STW15NA50

Abstract: STH15NA50 STH15NA50FI
Contextual Info: STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS R DS on ID STH15NA50 STH15NA50FI STW15NA50 500 V 500 V 500 V < 0.4 Ω < 0.4 Ω < 0.4 Ω 14.6 A 9.3 A 14.6 A TO-247 TYPICAL RDS(on) = 0.33 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

HC- 543

Abstract: STH15NA50 STH15NA50FI STW15NA50
Contextual Info: STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH15NA50 STH15NA50FI STW15NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V 500 V < 0.4 Ω < 0.4 Ω < 0.4 Ω 14.6 A 9.3 A 14.6 A TO-247 TYPICAL RDS(on) = 0.33 Ω

STH15NB50FI

Abstract: STW15NB50
Contextual Info: STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID STW15NB50 STH15NB50FI 500 V 500 V < 0.36 Ω < 0.36 Ω 14.6 A 10.5 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY

STH15NB50FI

Abstract: STW15NB50 01300C
Contextual Info: STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID STW15NB50 STH15NB50FI 500 V 500 V < 0.36 Ω < 0.36 Ω 14.6 A 10.5 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

STH155N75F4-2

Abstract: STP155N75F4
Contextual Info: STH155N75F4-2 STP155N75F4 N-channel 75 V, 4.2 mΩ, 160 A TO-220, H2PAK StripFET DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS on max ID STP155N75F4 75 V 5.6 mΩ 120 A STH155N75F4-2 75 V 5.2 mΩ 160 A 2 3 • ■ Extremely low on-resistance RDS(on)

15n50

Abstract: sth15n50f1 7n30
Contextual Info: SCS-THOMSON STH15N50 STH15N50FI !ILJ gTO«§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH15N50 S TH 15N50FI ¡ V dss R ds(oh 500 V 500 V 0.4 Ü 0.4 £2 i Id | 15 A 9.3 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

STH15NB50FI

Abstract: STW15NB50 P025P
Contextual Info: STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID STW15NB50 STH15NB50FI 500 V 500 V < 0.36 Ω < 0.36 Ω 14.6 A 10.5 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY

STH15NA50

Abstract: STH15NA50FI STW15NA50
Contextual Info: STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS R DS on ID STH15NA50 STH15NA50FI STW15NA50 500 V 500 V 500 V < 0.4 Ω < 0.4 Ω < 0.4 Ω 14.6 A 9.3 A 14.6 A • ■ ■ ■ ■ ■ ■ TO-247 TYPICAL RDS(on) = 0.33 Ω

STH15NA50

Abstract: STH15NA50FI STW15NA50
Contextual Info: STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH15NA50 STH15NA50FI STW15NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V 500 V 500 V < 0.4 Ω < 0.4 Ω < 0.4 Ω 14.6 A 9.3 A 14.6 A TO-247 TYPICAL RDS(on) = 0.33 Ω

ST*15NB50

Abstract: DSASW003743 STH15NB50FI STW15NB50
Contextual Info: STW15NB50 STH15NB50FI N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID STW15NB50 STH15NB50FI 500 V 500 V < 0.36 Ω < 0.36 Ω 14.6 A 10.5 A TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

SC06140

Abstract: STH15NB50FI SD-15A
Contextual Info: rzÈ7 ìbx-rsz. SGS-THOMSON STH15NB50FI N - CHANNEL ENHANCEMENT MODE MESH OVERLAY POWER MOSFET PRELIMINARY DATA TYPE V dss R d S oii Id STH15NB50FI 500 V < 0.36 Ì2 14 6 A • . . ■ . . . TYPICAL RDS(on) = 0.33 £2 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

15NB50

Abstract: H15NB50FI W15NB50 H15NB50 P025P ATT218 STW15NB50 STH15NB50FI
Contextual Info: STW15NB50 STH15NB50FI  N-CHANNEL 500V - 0.33Ω - 14.6A T0-247/ISOWATT218 PowerMESH MOSFET TYPE V DSS R DS on ID ST W15NB50 ST H15NB50FI 500 V 500 V < 0.36 Ω < 0.36 Ω 14.6 A 10.5 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.33 Ω EXTREMELY HIGH dv/dt CAPABILITY

w15na50

Abstract: 15NA50 15NA5
Contextual Info: *57 S G S -T H O M S O N iL iO M iQ £ I s t h i s n a s o /f i STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V dss R DS(on) Id STH15NA50 STH15NA50FI STW15NA50 500 V 500 V 500 V < 0.4 a < 0.4 a < 0.4 a 14.6 A 9.3 A 14.6 A TO-247 • TYPICAL R Ds(on) = 0.33 Q

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

L4981A APPLICATION NOTES

Abstract: L4981A L4981B 3kw pfc L4981 PFC 3kw DIP20 L4981X L4981XD SO20
Contextual Info: L4981A L4981B POWER FACTOR CORRECTOR ADVANCE DATA CONTROL BOOST PWM UP TO 0.99P.F. LIMIT LINE CURRENT DISTORTION TO < 5% UNIVERSAL INPUT MAINS FEED FORWARD LINE AND LOAD REGULATION AVERAGE CURRENT MODE PWM FOR MINIMUM NOISE SENSITIVITY HIGH CURRENT BIPOLAR AND DMOS TOTEM POLE OUTPUT

Contextual Info: STI150N10F7, STP150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in I2PAK and TO-220 packages Datasheet − production data Features Order codes VDS RDS on max 100 V 0.0042 Ω STI150N10F7 ID PTOT 110 A 250 W STP150N10F7

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein: