STL1 Search Results

13N60M2

Abstract: STL13N60M2
Contextual Info: STL13N60M2 N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STL13N60M2 650 V 0.42 Ω 7A • Extremely low gate charge • Lower RDS(on) x area vs previous generation

Contextual Info: STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production data Features 1 4 1 Order code VDS RDS on max. ID STL13DP10F6 100 V 0.18 Ω 3.3 A • RDS(on) * Qg industry benchmark

JESD97

Abstract: L100NH3LL STL100NH3LL
Contextual Info: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STL100NH3LL 30V <0.0035Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

Contextual Info: STL130N8F7 N-channel 80 V, 4 mΩ, 24 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - preliminary data Features Order code VDS RDS on max ID PTOT STL130N8F7 80 V 4.6 mΩ (VGS=10 V) 24 A 5W • Ultra low on-resistance 1

Contextual Info: STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Type VDSS STL100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 2 3 • Ultra low on-resistance

Contextual Info: STL105NS3LLH7 N-channel 30 V, 0.0032 Ω typ., 27 A STripFET VII DeepGATE™ Power MOSFETs plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - preliminary data Features Order code VDS RDS on max ID STL105NS3LLH7 30 V 0.0039 Ω 27 A • Very low on-resistance

Contextual Info: STL160N3LLH6 N-channel 30 V, 0.0011 Ω typ., 45 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − production data Features Order code VDSS RDS on max ID STL160N3LLH6 30 V 0.0013 Ω 45 A (1) 1. The value is rated according Rthj-pcb

Contextual Info: STL11N4LLF5 N-channel 40 V, 9.1 mΩ typ., 15 A STripFET V Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet − production data Features Order code VDS RDS on max ID STL11N4LLF5 40 V 9.7 mΩ 15 A • Low gate charge ■ Very low on-resistance ■

stl105ns3llh7

Contextual Info: STL105NS3LLH7 N-channel 30 V, 0.0033 Ω typ., 27 A STripFET VII DeepGATE™ Power MOSFETs plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - preliminary data Features Order code VDS RDS on max ID STL105NS3LLH7 30 V 0.0039 Ω 27 A • Very low on-resistance

Contextual Info: STL150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS STL150N3LLH5 30 V RDS on max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

30374

Abstract: 30358 STL140 30357 30359 header pin dimensions 30356 stl132 30.374
Contextual Info: PREVIOUS HOME NEXT FIND IT PLUGGABLE PRINTED CIRCUIT Metric Pin Spacinga Pin Headers Smaller pin diameter for 1.0mm .0394" through-holes STL130, STL132 (Straight) and STL140 (Right Angle) Pin Headers are used with the highly cost effective Tubular Screw

STL11NH3LL

Abstract: schematic diagram of energy saving device st marking code JESD97 11NH3L STL11
Contextual Info: STL11NH3LL N-channel 30 V, 0.0078 Ω , 11 A, PowerFLAT 3.3 x 3.3 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STL11NH3LL 30 V < 0.0092 Ω 11 A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio

schematic diagram of energy saving device

Abstract: STMICROELECTRONICS TOP making
Contextual Info: STL18N55M5 N-channel 550 V, 0.180 Ω, 13 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ V Power MOSFET Preliminary data Features Type VDSS @ TJmax RDS(on) max ID STL18N55M5 600 V < 0.240 Ω 13 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case

schematic diagram of energy saving device

Abstract: STL16N65M5
Contextual Info: STL16N65M5 N-channel 650 V, 0.270 Ω, 12 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ V power MOSFET Preliminary data Features Type VDSS @ TJmax RDS(on) max ID STL16N65M5 710 V < 0.299 Ω 12 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case

STL17N3LLH6

Contextual Info: STL17N3LLH6 N-channel 30 V, 0.0038 Ω, 17 A PowerFLAT 3.3x3.3 STripFET™ VI DeepGATE™ Power MOSFET Features Order code VDSS RDS(on) max. ID STL17N3LLH6 30 V 0.0045 Ω 17 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark

stl140n4

Abstract: STL140N4LLF5
Contextual Info: STL140N4LLF5 N-channel 40 V, 0.00275 Ω, 32 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL140N4LLF5 40 V 0.00275 Ω 32 A (1) 1. The value is rated according Rthj-pcb. • RDS(on) * Qg industry benchmark

STL27N15

Contextual Info: STL27N15 N-CHANNEL 150V - 0.045 Ω - 27A PowerFLAT LOW GATE CHARGE STripFET™ MOSFET TARGET DATA TYPE STL15N15 • ■ ■ ■ ■ VDSS RDS on ID 150 V <0.060 Ω 27 A(1) TYPICAL RDS(on) = 0.045 Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE (1mm MAX)

STL16N1VH5

Abstract: PowerFLAT AM01472v1 AM01468v1
Contextual Info: STL16N1VH5 N-channel 12 V, 0.0019 Ω , 16 A, PowerFLAT 3.3 x 3.3 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL16N1VH5 12 V 0.0032 Ω 16 A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

258 st

Contextual Info: STL100N3LLH7 N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT 5x6 STripFET™ VII DeepGATE™ Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL100N3LLH7 30 V 0.0035 Ω 25 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark

16n65m5

Abstract: STL16N65M5 PowerFLAT
Contextual Info: STL16N65M5 N-channel 650 V, 0.270 Ω, 12 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ V power MOSFET Preliminary data Features Type VDSS @ TJmax RDS(on) max ID STL16N65M5 710 V < 0.299 Ω 12 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case

STL15DN4

Abstract: 15DN4F5 PowerFLAT
Contextual Info: STL15DN4F5 Dual N-channel 40 V, 8 mΩ, 15 A PowerFLAT 5x6 double island, STripFET™ V Power MOSFET Features Type VDSS RDS(on) max. ID STL15DN4F5 40 V 9 mΩ 15 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STL100NH3LL 30V <0.0035Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

Contextual Info: STL100NH3LL N-CHANNEL 30V - 0.0028Ω - 100A PowerFLAT 6x5 STripFET™ III MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE STL100NH3LL • ■ ■ ■ ■ ■ VDSS RDS(on) ID 30 V < 0.0035 Ω 25 A (2) TYPICAL RDS(on) = 0.0028 Ω @ 10V

PowerFLAT

Contextual Info: STL100NH3LL N-CHANNEL 30V - 0.0032Ω - 25A PowerFLAT 6x5 STripFET™ III MOSFET PRODUCT PREVIEW Table 1: General Features TYPE STL100NH3LL • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) ID 30 V < 0.0035 Ω 25 A (1) TYPICAL RDS(on) = 0.0032Ω @ 10V