STORAGETEMPERATURE Search Results

h33 diode

Contextual Info: MIVR 42095 mn NEGATIVE HIGH TEMPERATURE REGULATOR Designed for use in high temperature environments FEATURES • Output current to 1.5 amps • Input voltage to -30V • Internal short circuit protection, foldbackand current limiting • StorageTemperature +250°C

stk 080

Abstract: STK080 STK082-105 STK-078-105 STK-078 STK-080 sTK-O80 STK 082 STK078-105 STK-O78
Contextual Info: \Features r @ l M S T , l C h a n n ebl y 2 P o w e rS u p p l i e s . I AF output powerSTK-075: l5W min., STKO77:2OW min.,STK-O78:24W min.,STK-080: 3 0 Wm i n . ,S T K - 0 8 2 : 3 5 Wm i n . S T K - 0 8 3 : 4 0 W min. Vaamax OperatingCaseTemperature T6 StorageTemperature

Contextual Info: RoHS C omp liant SCHOTTKY BARRIER RECTIFIERS PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGETEMPERATURE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum

Contextual Info: Item S /m bol f N o m in a l fre q u e n c y Specif icat tons 4 .0 0 0 M H z to 3 0 .0 0 0 M H z R em at ks *1 F u n d am e n ta l m o d e 3rd o v e rto n e m o d e 2 6 .0 0 0 M H z to 6 4 .0 0 0 M H z Temperature range Storagetemperature: T stg Operating temperatu re:

dc3100

Contextual Info: Ceramic High Pass Filter 500, HFCN-3800 4250 to 10000 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C StorageTemperature -55°C to 100°C RF Power Input *derate linearly to 3W at 100°C ambient 7W* • • • • • • Low Cost Small size

Contextual Info: Surface Mount Voltage Variable Attenuator 50Q, eva-3ooo 50 to 3000 MHz Maximum Ratings Operating Temperature Features • • • • • • -45°C to 85°C StorageTemperature -55°C to 100°C Absolute Supply Voltage V+ 7V Absolute Max. Control Voltage(Vctrl)

MP2497

Abstract: MP2482 MP2423 MP2467 MP2480 MP2492 MP2468 MP2493 MP2481 MP2404
Contextual Info: Microwave Schottky Ring Quads FEATURES E3 Low Inductance Leadless Rings High Fco High Temperature Tri-Metal M1 E7 ENVIRONMENTAL RATINGS Maximum Operating Temperature. - - - - - - - -65°C to+200°C StorageTemperature - - - - - - - - - -65°C to+200°C PowerDissipation @ 25°C - - - - - - 100mW Derate

HA 16601 A

Abstract: M94669
Contextual Info: SurfaceMount Frequency Mixer_ LAVI-25VH+ US Patent 6,807,407 Level 23 LO Power +23 dBm , Features Maximum Ratings Operating Temperature StorageTemperature LO Power RF Power • • • • • -45°C to 85°C -55°C to 100oC +25dBm +23dBm Pin Connections

100-C

Abstract: FF1145 VBFZ-4000 pass band filter 8000 MHz
Contextual Info: Coaxial Band Pass Filter 500, VBFZ-4000+ 3500 to 4500 MHz Features Maximum Ratings Operating Temperature -55°C to 85°C StorageTemperature_-55°C to 100°C RF Power Input*_7W at 25°C *P a ssb a n d ra tin g , derate lin e a rly to 3 W a t 100 °C a m b ien t.

Contextual Info: F M C 171 HP 1-01 k u , k-Bcind Power GaAs Modules ABSOLUTE MAXIMUM RATINGS Am bient Tem perature Ta = 25 C PaKttneter Rating Unit DC Input Voltage VDD 10 V DC Input Voltage VGG -7 V Input Power Pin 11.5 dBm StorageTemperature Tstg -55 t o +125 °C Operating Case Temperature

tc5117400f

Abstract: TC5117400J
Contextual Info: TOSHIBA TC5117400J/Z/FT-60/70 4,194,304 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC5117400J/Z/FT-60/70 is the new generation dynamic RAM organized 4,194,304 word by 4 bit. The TC5117400J/Z/FT-60/70 utilizes Toshiba’s CMOS silicon gate process technology as well as advanced

rs232 encoder decoder schematic diagram

Abstract: MT8950AC decoding technique of non return to zero format i
Contextual Info: ISO-CMOS ST-BUS FAMILY MITEL MT8950 Data Codec Features ISSUE 4 November 1990 Ordering Information • • Transparent coding and decoding of 0 to 8, 9.6 and 19.2 kbps data Coding compatible to PCM voice channels at 56/64 kbps in ST-BUS format Automatic line polarity detection and correction

Contextual Info: R6046FNZ 10V Drive Nch MOSFET - R6046FNZ Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

ASTM-D-1308-02

Abstract: SCT7650 3M microtouch controller ASTM-F-1598-95 SCT3250 3M Touch Systems capacitive touch screen theory SCT32 30KV microtouch
Contextual Info: 3M MicroTouch System SCT7650EX ™ Rugged Solution for Impact Strength and User Safety The 3M MicroTouch System SCT7650EX is a rugged version of 3M's industry-leading surface capacitive system, the 3M MicroTouch System SCT3250EX, which is created by laminating

20 amp MOSFET transistor

Abstract: MOSFET POWER TRANSISTOR DU2880V
Contextual Info: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C

APT20M36BLL

Abstract: APT60S20B APT60S20S
Contextual Info: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT60S20B APT60S20S 200V 200V 75A 75A 2 1 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses

UF2815OJ

Contextual Info: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C

APT15S20KCT

Abstract: APT20M36BLL
Contextual Info: 1 3 TO-220 2 1 - Anode 1 2 - Common Cathode Back of Case - Cathode 3 - Anode 2 APT15S20KCT G 1 200V 2X25A *G Denotes RoHS Compliant, Pb Free Terminal Finish. 3 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode

PH1214-2M

Abstract: .15 j63 1.5 j63 1035 transistor
Contextual Info: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

CS4810

Contextual Info: Temic U2791B S e m i c o n d u c t o r s 1000-MHz Quadrature Demodulator Description The U2791B silicon monolithic integrated circuit is a quadrature demodulator which is manufactured using TEMIC Semiconductors’ advanced U HF technology. This demodulator features a frequency range from

transistor c 2499

Abstract: transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499
Contextual Info: E XF .- an AMP company r = RF MOSFET Power Transistor, 2 - 175 MHz 12OW, 28V DU28120T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

led bar siemens

Contextual Info: SIEMENS CfIPNTSi OPTO SIEMENS 44E D Ô23b32b DD OM ^n S ISIEX OLB 2620 YELLOW YLB 2720 GREEN GLB 2820 HIGH EFFICIENCY RED LIGHT BARS T- Hum. Displays Bar Graphs Light Bars Package Dimensions in Inches mm 16 IS M 13 12 I I 10 9 l*J Ui w y r?l FE A TU R E S

SST5484

Contextual Info: 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 SST5484 2N5485 SST5485 2N5486 SST5486 PRODUCT SUMMARY Part Number -0 .3 to - 3 -2 5 3 loss Min mA 1 2N/SST5485 -0 .5 to - 4 -2 5 3.5 4 2N/SST5486 -2 1 0 -6 -2 5 4 8 V G S (off) (V) V (B R )G S S Min (V)

13MM

Abstract: PH3134-2OL transistor f20 PH3134
Contextual Info: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors