STR 50112 Search Results

TX-6-G

Abstract: FL1085 7 segment ,74LS245 74LS245AN
Contextual Info: DP83955A/DP83956A National Semiconductor DP83955A/DP83956A LERIC LitE Repeater Interface Controller General Description The DP83955/56 LitE Repeater Interface Controller LERIC may be used to implement an IEEE 802.3 multiport repeater unit. It fully satisfies the IEEE 802.3 repeater speci­

marking code AE rc SMD Transistor

Abstract: eprom 92112 SMD TRANSISTOR MARKING BF marking code EA SMD Transistor SMD TRANSISTOR MARKING by 9f
Contextual Info: INTEGRATED CIRCUITS DATA SHEET P83C524; P80C528; P83C528 8-bit microcontrollers Product specification File under Integrated Circuits, IC20 1997 Dec 15 Philips Semiconductors Product specification P83C524; P80C528; P83C528 8-bit microcontrollers CONTENTS 15

DIODE C06-15

Abstract: str 3105 DIODE C06-15 65 diode EGP PIN DIAGRAM OF 7 segment display LT 542 DIODE C06-15 46 LINEAR encoder TX4 C06-15 diode PIN DIAGRAM OF 7 segment display LT 542 in DIODE C06-15 75
Contextual Info: DP83955/DP83956 blE 0 3 D b5D115M 00fl07fl2 G5M « N S C S PRELIMINARY N a tio n a l ÆÆ Semiconductor NATL SEHICOND L I N E A R DP83955/DP83956 LERIC LitE Repeater Interface Controller General Description The DP83955/56 LitE Repeater Interface Controller

str 6307 datasheet

Abstract: str 6307 STR 6307 POWER ic str 6307 STR S 6307 data sheet str 6307 D-71229 PAN 6595 str 6700 digital piano IC
Contextual Info: Toshiba Semiconductor New Product Guide Toshiba DVD Video Decoder TC81203TB The TC81203TB is a personal computer DVD video decoder with built-in PCI interface, digital copy protection, MPEG2 video decoder, sub-picture decoder and audio interface. This DVD video decoder may also be used as a video CD decoder. The built-in digital video

str 50112

Abstract: TDA1517U TDA1517 BB210
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA1517; TDA1517P 2 x 6 W stereo power amplifier Product specification Supersedes data of 1995 Dec 15 File under Integrated Circuits, IC01 1998 Apr 28 Philips Semiconductors Product specification 2 × 6 W stereo power amplifier

STR 6307

Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
Contextual Info: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.

MG1200V1us51

Contextual Info: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with

Contextual Info: January '98 Optical Communication Devices Optical Transmitter Module TOLD397S-EA APPLICATION • Optical transmitter for 10Gb/s OC-192 FEATURES package 12.7 (W) x 30(D) x 9(H) mm • Butterfly pigtail • SMF µm DFB-LD integrated with EA modulator • 1.55

Contextual Info: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with

Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering

STR 3118

Abstract: National Semiconductor bufer DP83955AV ed 77A DIODE str 3105 DP83956AVLY TX04P
Contextual Info: DP83955A/DP83956A bSQllEH DOflbBMM ObD « N S C E National ÆM Semiconductor DP83955A/DP83956A LERIC LitE Repeater Interface Controller General Description The DP83955/56 LitE Repeater Interface Controller LERIC may be used to Implement an IEEE 802.3 multiport

str 6307

Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Contextual Info: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering

str 50112

Abstract: MGD959 stereo amplifier diagram TDA8563
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8563AQ 2 x 40 W/2 Ω stereo BTL car radio power amplifier with diagnostic facility Product specification File under Integrated Circuits, IC01 1997 Feb 20 Philips Semiconductors Product specification 2 × 40 W/2 Ω stereo BTL car radio power

str 6307

Abstract: str 6307 datasheet STR 6307 POWER ic str 6307 D-71229 STR S 6307
Contextual Info: Low Power CMOS ASIC 0.3µm 3V/2V TC222C Series Cell-Based IC PRODUCT GUIDE Overview features help to substantially reduce your chip’s power while maximizing the critical path speed. Power Comparison e.g., 100k gates, 70k-bit SRAM, 20MHz Core : 3V Core : 2V, I/Os : Single 3V

Contextual Info: NEW PRODUCT GUIDE , Toshiba s LED line-up now includes green LED lamps which emit a brighter green than , previous products. This has been made possible by Toshiba s thin-film crystal growth technology and various other technological advances. These new high-brightness green LED lamps are suitable for a wide variety of applications.

U1FWJ44P

Abstract: I-FLAT PACKAGE
Contextual Info: Schottky Barrier Diodes NEW PRODUCT GUIDE The U3FWK42 is a commercial Schottky barrier diode SBD based on sub-micron trench technology. The U3FWK42 seeks to improve on the existing trade-off between forward voltage (VF) and instantaneous reverse current (IR) in Schottky barrier diodes.

smd marking 1pn

Abstract: str 50112 PCF1252 marking 4814 so8 smd marking 9T PCF1252-1 PCF1252-2P smd so8 marking code PCF1252-1P/F4,112
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF1252-X family Threshold detector and reset generator Product specification Supersedes data of 1996 Jan 23 File under Integrated Circuits, IC11 1998 Apr 16 Philips Semiconductors Product specification Threshold detector and reset generator

TL 650 ht

Abstract: DS36C280 DS36C280T DS36C280TM DS36C280TN M08A str z 422 9
Contextual Info: PRELIMINARY Semiconductor May 1995 DS36C280 Slew Rate Controlled CMOS EIA-RS-485 Transceiver General Description Features The DS36C280 is a low power differential bus/line trans­ ceiver designed to meet the requirements of RS-485 Stan­ dard for multipoint data transmission. In addition, it is com­

TMP94C241AF

Abstract: TMP94PS40AF DONG YANG MOTOR TMP94CS40AF TMP94C251F TMP94C241a D-71229 str 6307 datasheet QFP144 QFP160
Contextual Info: 900/H2 Series Product Line of 32-Bit Microcontrollers with Internal ROM Seamless core 900 Family Toshiba is now offering the TMP94CS40AF product line — internal ROM versions of the 32-bit 900/H2 Series from the 900-Family. Thanks to its seamless core line, Toshiba provides strong support

str 50112

Abstract: pcf*8572 PCF8572 PCF85xxC-2 Family PTC 841 PCF8571 PCF8582C2N IC12 Peripherals data handbook
Contextual Info: INTEGRATED CIRCUITS DATA SHEET PCF85xxC-2 family 256 to 1024 x 8-bit CMOS EEPROMs with I2C-bus interface Product specification File under Integrated Circuits, IC12 1997 Feb 13 Philips Semiconductors Product specification 256 to 1024 × 8-bit CMOS EEPROMs with

str 50112 PIN DETAILS

Abstract: TEA1095TD TEA1095N philips catalog potentiometer tea1095 tea109 20/str 50112 PIN DETAILS
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA1095 Voice switched speakerphone IC Product specification Supersedes data of 1996 Mar 22 File under Integrated Circuits, IC03 1997 Nov 25 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095

Contextual Info: la contact type/2a contact type (Ta=25°C) Characteristic Characteristic Graphs and Distribution Data for TLP176G and 206G Symbol Rating Unit DC Forward Current IF 50 mA Junction Temperature Tj 125 °C Tstg -55 to -125 °C Distribution Data for Major Characteristics

TEA1095N

Abstract: str 50112 str 50112 PIN DETAILS
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA1095 Voice switched speakerphone IC Product specification Supersedes data of 1996 Mar 22 File under Integrated Circuits, IC03 1997 Nov 25 Philips Semiconductors Product specification Voice switched speakerphone IC TEA1095

OMF51

Abstract: PDB552 80C51 8XC51 PDS51 7E-01
Contextual Info: Development System for 8XC51 Microcontroller Derivatives PDS51 Description The PDS51 is a board-level, full featured, 12 MHz In-Circuit Em ulator fo r the P h ilips 8XC51 fa m ily of M icrocontrollers. It allow s the user c o m p le te acce ss to the internal