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STMicroelectronics STRH8N10ST SMD.5//Rad-Hard 100 V, 6 A, N-channel Power MOSFET - Bulk (Alt: STRH8N10ST)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STRH8N10ST	Bulk		111 Weeks	10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	STRH8N10ST			21 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STRH8N10SG - Bulk (Alt: STRH8N10SG)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STRH8N10SG	Bulk		111 Weeks	10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STRH8N10S1 Trans MOSFET N-CH 100V 6A 3-Pin SMD-0.5 Strip - Bulk (Alt: STRH8N10S1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STRH8N10S1	Bulk		26 Weeks, 5 Days	10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	STRH8N10S1			17 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now

STRH8N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications	Original	STRH8N10 STRH8N10S1 DocID018504	PDF
Contextual Info: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications	Original	STRH8N10 STRH8N10S1 DocID018504	PDF
Contextual Info: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH8N10STF3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization	Original	STRH8N10STF3 STRH8N10STF1	PDF
STRH8N10STF3 Contextual Info: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH8N10STF3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight	Original	STRH8N10STF3 100kRad 34Mev/cm STRH8N10STF3	PDF
Contextual Info: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - preliminary data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications	Original	STRH8N10 STRH8N10S1 STRH8N10SG DocID018504	PDF
Contextual Info: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability	Original	STRH8N10 STRH8N10N1 STRH8N10NG	PDF
Contextual Info: STRH8N10 Rad-Hard 100 V, 6 A N-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching • 100% avalanche tested • Hermetic package • 70 krad TID SMD0.5 • SEE radiation hardened Applications	Original	STRH8N10 STRH8N10S1 DocID018504	PDF
Contextual Info: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability	Original	STRH8N10 STRH8N10N1 STRH8N10NG	PDF
Contextual Info: STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH8N10STF3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH8N10STF3 100kRad 34Mev/cm	PDF
Contextual Info: STRH8N10STF1 STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH8N10STF1 100 V STRH8N10STF3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH8N10STF1 STRH8N10STF3 100kRad 34Mev/cm	PDF
Contextual Info: STRH8N10 Rad-Hard N-channel 100 V, 6 A Power MOSFET Features VDSS ID RDS on Qg 100 V 6A 0.30 Ω 22 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened TO-39 Applications ■ Satellite ■ High reliability	Original	STRH8N10 STRH8N10N1 STRH8N10NG	PDF
STRH8N10STF3 Abstract: STRH8N10 JESD97 mar 806 Contextual Info: STRH8N10STF1 STRH8N10STF3 N-channel 100V - 0.160Ω - TO-39 rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH8N10STF1 100 V STRH8N10STF3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH8N10STF1 STRH8N10STF3 100kRad 34Mev/cm STRH8N10STF3 STRH8N10 JESD97 mar 806	PDF