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    SUD50N03 Price and Stock

    Vishay Siliconix SUD50N03-06AP-E3

    MOSFET N-CH 30V 90A TO252
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    DigiKey SUD50N03-06AP-E3 Cut Tape 3,188 1
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    Vishay Siliconix SUD50N03-11-E3

    MOSFET N-CH 30V 50A TO252
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    Vishay Siliconix SUD50N03-12P-E3

    MOSFET N-CH 30V TO252
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    Vishay Siliconix SUD50N03-06P-E3

    MOSFET N-CH 30V 84A TO252
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    Vishay Siliconix SUD50N03-09P-E3

    MOSFET N-CH 30V 63A TO252
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    SUD50N03-09P-E3 Digi-Reel 1
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    SUD50N03 Datasheets (43)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUD50N03-06AP-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 90A TO252 Original PDF
    SUD50N03-06AP-T4E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 90A TO252 Original PDF
    SUD50N03-06P Vishay Intertechnology N-Channel 30-V (D-S) 175°C MOSFET Original PDF
    SUD50N03-06P Vishay Siliconix P-Channel MOSFET Original PDF
    SUD50N03-06P Vishay Siliconix MOSFETs Original PDF
    SUD50N03-06P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 84A TO252 Original PDF
    SUD50N03-06P SPICE Device Model Vishay N-Channel 30-V (D-S) 175 Degrees MOSFET Original PDF
    SUD50N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175°C MOSFET Original PDF
    SUD50N03-07 General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, 30A, Single, DPAK Scan PDF
    SUD50N03-07AP Vishay Intertechnology N-Channel 30-V (D-S) 175°C MOSFET Original PDF
    SUD50N03-07AP Vishay Siliconix MOSFETs Original PDF
    SUD50N03-07AP SPICE Device Model Vishay N-Channel 30-V (D-S), 175°C MOSFET Original PDF
    SUD50N03-07-E3 Vishay Siliconix N-Channel 30-V (D-S) 175°C MOSFET Original PDF
    SUD50N03-07 SPICE Device Model Vishay N-Channel Enhancement-Mode Transistor Original PDF
    SUD50N03-09P Vishay Intertechnology N-Channel 30-V (D-S) MOSFET Original PDF
    SUD50N03-09P Vishay Siliconix MOSFETs Original PDF
    SUD50N03-09P-E3 Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    SUD50N03-09P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 63A TO252 Original PDF
    SUD50N03-09P-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 63A TO252 Original PDF
    SUD50N03-09P SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

    SUD50N03 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available


    Original     		PDF SUD50N03-09P O-252 SUD50N03-09P-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-7m3P Vishay Siliconix New Product N-Channel 30-V D-S WFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0073 at VGS = 10 V 50 0.0087 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ) • Low Qgd WFET Technology • 100 % Rg and UIS Tested RoHS 15.7 nC


    Original     		PDF SUD50N03-7m3P O-252 SUD50N03-7m3P-E3 S-60924-Rev. 29-May-06

    SUD50N03-10BP

    Abstract: S0125
    Text: SUD50N03-10BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.010 @ VGS = 10 V 20 0.014 @ VGS = 4.5 V 18 V(BR)DSS (V) 30 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-10BP


    Original     		PDF SUD50N03-10BP O-252 S-01256--Rev. 19-Jun-00 SUD50N03-10BP S0125

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available


    Original     		PDF SUD50N03-09P O-252 SUD50N03-09P SUD50N03-09P-E3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 50 0.017 at VGS = 4.5 V 43 VDS (V) 30 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested


    Original     		PDF SUD50N03-11 O-252 SUD50N03-11-E3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-7m3P Vishay Siliconix New Product N-Channel 30-V D-S WFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0073 at VGS = 10 V 50 0.0087 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ) • Low Qgd WFET Technology • 100 % Rg and UIS Tested RoHS 15.7 nC


    Original     		PDF SUD50N03-7m3P O-252 SUD50N03-7m3P-E3 18-Jul-08

    74237

    Abstract: SUD50N03-09P SUD50N03-09P-E3 SUD50N03-10BP SUD50N03-10BP-E3
    Text: Specification Comparison Vishay Siliconix SUD50N03-09P vs. SUD50N03-10BP Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TO-252 Identical Part Number Replacements SUD50N03-09P-E3 Replaces SUD50N03-10BP-E3 SUD50N03-09P Replaces SUD50N03-10BP ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF SUD50N03-09P SUD50N03-10BP O-252 SUD50N03-09P-E3 SUD50N03-10BP-E3 SUD50N03-09P SUD50N03-09P, 74237 SUD50N03-10BP SUD50N03-10BP-E3

    SUD50N03-10P

    Abstract: No abstract text available
    Text: SUD50N03-10P Siliconix N-Ch 30-V D-S , 175_C, MOSFET PWM Optimized New Product PRODUCT SUMMARY V(BR)DSS (V) 30 RDS(ON) (W) ID (A) 0.010 @ VGS = 10 V "50A 0.015 @ VGS = 4.5 V "45 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-10P S


    Original     		PDF SUD50N03-10P O-252 18-Jul-08 SUD50N03-10P

    7804

    Abstract: AN609 SUD50N03-09P
    Text: SUD50N03-09P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD50N03-09P AN609 04-Sep-07 7804

    SUD50N03-09P

    Abstract: SUD50N03-09P-E3 SUD50N03-10P SUD50N03-10P-E3
    Text: Specification Comparison Vishay Siliconix SUD50N03-09P vs. SUD50N03-10P Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TO-252 Identical Part Number Replacements SUD50N03-09P-E3 Replaces SUD50N03-10P-E3 SUD50N03-09P Replaces SUD50N03-10P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF SUD50N03-09P SUD50N03-10P O-252 SUD50N03-09P-E3 SUD50N03-10P-E3 SUD50N03-09P SUD50N03-09P, SUD50N03-10P SUD50N03-10P-E3

    530165-1

    Abstract: 9306 AN609 SUD50N03-11 530165
    Text: SUD50N03-11_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUD50N03-11 AN609 04-Sep-07 530165-1 9306 530165

    SUD50N03-09P

    Abstract: SUD50N03-09P-E3 SUD50N03-10AP SUD50N03-10AP-E3
    Text: Specification Comparison Vishay Siliconix SUD50N03-09P vs. SUD50N03-10AP Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TO-252 Identical Part Number Replacements SUD50N03-09P-E3 Replaces SUD50N03-10AP-E3 SUD50N03-09P Replaces SUD50N03-10AP ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF SUD50N03-09P SUD50N03-10AP O-252 SUD50N03-09P-E3 SUD50N03-10AP-E3 SUD50N03-09P SUD50N03-09P, SUD50N03-10AP SUD50N03-10AP-E3

    SUD50N03-06P

    Abstract: No abstract text available
    Text: SUD50N03-06P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 @ VGS = 10 V 84b 0.0095 @ VGS = 4.5 V 59b APPLICATIONS VDS (V) 30 TrenchFETr Power MOSFET 175_C Junction Temperature Optimized for Low-Side Synchronous Rectifier Operation


    Original     		PDF SUD50N03-06P O-252 S-31724--Rev. 18-Aug-03 SUD50N03-06P

    SUD50N03-16P

    Abstract: No abstract text available
    Text: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab


    Original     		PDF SUD50N03-16P O-252 SUD50N03-16P--E3 S-40466--Rev. 15-Mar-04 SUD50N03-16P

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-12P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 a ID (A) 0.0120 at VGS = 10 V 17.5 0.0175 at VGS = 4.5 V 14.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUD50N03-12P 2002/95/EC O-252 SUD50N03-12P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SUD50N03-07

    Abstract: B5029
    Text: SPICE Device Model SUD50N03-07 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit Schematic • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N03-07 gate-to-d25 28-May-98 SUD50N03-07 B5029

    SUD50N03-10P

    Abstract: No abstract text available
    Text: SPICE Device Model SUD50N03-10P Vishay Siliconix N-Channel 30-V D-S , 175°°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application


    Original     		PDF SUD50N03-10P 21-Oct-98 SUD50N03-10P

    ON285

    Abstract: SUD50N03-12P
    Text: SPICE Device Model SUD50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUD50N03-12P 0-to10V 26-Aug-03 ON285 SUD50N03-12P

    SUD50N03-06P

    Abstract: No abstract text available
    Text: SUD50N03-06P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0065 @ VGS = 10 V 25 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation


    Original     		PDF SUD50N03-06P O-252 S-20338--Rev. 18-Apr-02 SUD50N03-06P

    07AP

    Abstract: No abstract text available
    Text: SUD50N03-07AP Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A)a, b 0.007 @ VGS = 10 V 81c 0.010 @ VGS = 4.5 V 67c D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252


    Original     		PDF SUD50N03-07AP O-252 SUD50N03-07AP 08-Apr-05 07AP

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-10CP Preliminary Information Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency PRODUCT SUMMARY 30 APPLICATIONS rDS(on) (W) ID (A)a 0.010 @ VGS = 10 V 15 0.012 @ VGS = 4.5 V


    Original     		PDF SUD50N03-10CP O-252 SUD50N03-10CP S-05395--Rev. 25-Dec-01

    SUD50N03-16P

    Abstract: No abstract text available
    Text: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab


    Original     		PDF SUD50N03-16P O-252 SUD50N03-16P--E3 08-Apr-05 SUD50N03-16P

    1D TRANSISTOR

    Abstract: DIODE 1D
    Text: T fmtc SUD50N03-10 Semiconductors N-Channel Enhancement-Mode Transistor Product Summary V DS V r DS(on) (£2) 0.010 @ VGS = 10 V 0.019 @ VGS = 4.5 V 30 I d (A) ±15 ±12 v;f _ - «I 8^ TO-252 O XX G O- Drain Connected to Tab G D S Top View Ô Order Number:


    OCR Scan     		PDF SUD50N03-10 O-252 SUD50N03-10 S-49520--Rev. 18-Dec-96 1D TRANSISTOR DIODE 1D

    Untitled

    Abstract: No abstract text available
    Text: SUD50N03-10 Siliconix N-Channel 30-V D-S , 175 °C MOSFET Product Summary r DS(on) ( ^ ) Id (A) 0.010 @ V o s = 10 V ±15 ±12 V d s (V ) 30 0.019 @ VGs = 4.5 V yis te * 'VV^'oe^ 1 D O T O -252 o TT A <Ji Drain Connected to Tab G D S Top View Order Number:


    OCR Scan     		PDF SUD50N03-10 SUD50N03-10 S-57253--Rev. 24-Feb-98