SUMITOMO METAL Search Results

SUMITOMO METAL Result Highlights (5)

Part	Manufacturer	Description
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

SUMITOMO METAL Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Sumitomo Metal Abstract: diodes h7d A504 piezoelectric ultrasonic Sumitomo 1000 KR Electronics spem 1012C Ultrasonic Piezoelectric Contextual Info: SUMITOMO Piezoelectric Products May 2003 Sumitomo Metal SMI Electronics Devices Inc. 1 SPEM Sumitomo PiezoElectric Materials 製品群 Products 圧電材料微小位置決め用積層型アクチュエ−タ− バイモルフ型アクチュエ−タ−	Original	103kg/m3 Sumitomo Metal diodes h7d A504 piezoelectric ultrasonic Sumitomo 1000 KR Electronics spem 1012C Ultrasonic Piezoelectric	PDF
sumitomo 6600 Abstract: sumitomo epoxy 6600 4835 sumitomo EME 6600 sumitomo epoxy 8361H CY74FCT2245ATQC CY74FCT2646ATQC CY7C199-12VC JESD22 Contextual Info: Cypress Semiconductor Qualification Report QTP# 99101 VERSION 1.0 May, 1999 Sumitomo EME 6600CR Molding Compound Cypress Philippines CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor Quality and Reliability Department Cypress Semiconductor	Original	6600CR 6600CR 85C/85% CY7C63101A-OC CY74FCT2646ATQC CY74FCT2245ATQC 619903565M1 CY7C1399-VC CY62256V-VC sumitomo 6600 sumitomo epoxy 6600 4835 sumitomo EME 6600 sumitomo epoxy 8361H CY74FCT2245ATQC CY74FCT2646ATQC CY7C199-12VC JESD22	PDF
SUMITOMO EME6600 Abstract: EME6600 Compound 6600cs 3818 MIL-STD-883c-method 1010 6600CS Contextual Info: Cypress Semiconductor Package Qualification Report QTP# 99234 VERSION 1.1 September 2000 52-208-pin Plastic Quad Flatpack Package PQFP Sumitomo 6600CS molding Compound ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director	Original	52-208-pin 6600CS 52-208-Lead N52D/N208L 52/208-pin CY82C693-NC 619909669B SUMITOMO EME6600 EME6600 Compound 6600cs 3818 MIL-STD-883c-method 1010	PDF
sumitomo epoxy Abstract: 7C109A CY7C109 EME TI Contextual Info: Qualification Report January 1997 QTP# 95483, Version 1.0 SUMITOMO EME-9300 Low Alpha Molding Compound PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part	Original	EME-9300 CY7C109 32-pin, 400-mil CY7C109) 7C109A PassivaY7C109-VC CY7C109-VC sumitomo epoxy 7C109A CY7C109 EME TI	PDF
EME 7320 Abstract: Ablestik Ablestik 8361 7320 a144g SUMITOMO EME G A100A CY7C09579V-AC JESD22 ASE Cypress Contextual Info: Cypress Semiconductor Mold Compound Qualification Report QTP# 002403 VERSION 1.0 January, 2001 Sumitomo EME 7320 Mold Compound, MSL3 for DCD-Thin Quad Flat Pack, TQFP ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director	Original	160-lead CY7C375I-AC EME 7320 Ablestik Ablestik 8361 7320 a144g SUMITOMO EME G A100A CY7C09579V-AC JESD22 ASE Cypress	PDF
QMI 509 epoxy Abstract: SUMITOMO eme-6600hr 6600HR SOJ package MSL QMI 509 epoxy datasheet CY7C63001A-SC JESD22 EME6600HR mold compound EME 6600HR Contextual Info: Cypress Semiconductor Package Qualification Report QTP# 023401 VERSION 2.0 GI July, 2004 32-lead SOIC package using Sumitomo EME 6600HR Mold Compound, MSL1 Cypress Philippines CML-R CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Mira Ben-Tzur Principal Reliability Engineer	Original	32-lead 6600HR 28-44lead 635mils 01BLL-SI 610221877M CY62128BLL-SI QMI 509 epoxy SUMITOMO eme-6600hr SOJ package MSL QMI 509 epoxy datasheet CY7C63001A-SC JESD22 EME6600HR mold compound EME 6600HR	PDF
EGN13B200IV-R Abstract: F14G JESD22-A114 Contextual Info: EGN13B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 170W min. @ Pin=4W (36dBm) •High Efficiency: 55%(typ.) @ Pin=4W (36dBm) DESCRIPTION Sumitomo GaN-HEMT EGN13B200IV-R offers high power, high	Original	EGN13B200IV-R 36dBm) EGN13B200IV-R F14G JESD22-A114	PDF
JESD22-A114 Contextual Info: EGN28B100IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 120W min. @ Pin=6.3W (38dBm) •High Efficiency: 56%(typ.) @ Pin=6.3W (38dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high	Original	EGN28B100IV-R 38dBm) EGN28B100IV-R JESD22-A114	PDF
EGN28B400M1B-R Abstract: JESD22-A114 Sumitomo 1076 Contextual Info: EGN28B400M1B-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 400W min. @ Pin=25W (44dBm) •High Efficiency: 50%(typ.) @ Pin=25W (44dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B400M1B-R offers high power, high	Original	EGN28B400M1B-R 44dBm) EGN28B400M1B-R JESD22-A114 Sumitomo 1076	PDF
JESD22-A114 Abstract: Device Innovations Contextual Info: EGN29B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 200W min. @ Pin=15.8W (42dBm) •High Efficiency: 53%(typ.) @ Pin=15.8W (42dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high	Original	EGN29B200IV-R 42dBm) EGN28B100IV-R JESD22-A114 Device Innovations	PDF
EGN28B200IV-R Abstract: JESD22-A114 S-Band Radar Contextual Info: EGN28B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 230W min. @ Pin=12.6W (41dBm) •High Efficiency: 53%(typ.) @ Pin=12.6W (41dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high	Original	EGN28B200IV-R 41dBm) EGN28B100IV-R EGN28B200IV-R JESD22-A114 S-Band Radar	PDF
sumitomo CWDM Abstract: L-band laser Contextual Info: Wide Temperature -40 °C~95 °C Operation of Uncooled 1610 nm DFB Laser for CWDM Application Atsushi Matsumura, Takeshi Kishi, Michio Murata and Takashi Kato Sumitomo Electric Industries, Ltd.,1, Taya-cho, Sakae-ku, Yokohama, 244-8588, Japan, Email: matsumura-atsushi@sei.co.jp	Original		PDF
FLL57MK Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.	Original	FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2 FLL200IB-2 FLL300IL-3 FLL200IB-3 FLL57MK ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG FLL357 fll177 FLL357ME	PDF
ELPIDA Abstract: Elpida Memory NEC-Hitachi Memory working principle scanner TSOP II elpida Yaesu sagami DRAM elpida Contextual Info: TOPICS INTRODUCTION TO Elpida Memory, Inc. FORMERLY NEC-Hitachi Memory, Inc. Launch of World’s First 0.13 µm 256 Mb DRAM Hidemori Inukai Corporate Name Address Head office Sumitomo Seimei Yaesu Bldg. 3F, 2-1 Yaesu 2-chome, Chuo-ku, Tokyo Development center	Original	66-pin ELPIDA Elpida Memory NEC-Hitachi Memory working principle scanner TSOP II elpida Yaesu sagami DRAM elpida	PDF

F0513 Abstract: F0513005L LM324 sumitomo Laser diode driver Contextual Info: SUMITOMO ELECTRIC INDUSTRIES, LTD. 01.02.21 ♦ Features • Up to 3 Gbps high speed operation • Positive thermal coefficient of modulation current • Differential ECL compatible interface • -5.2 V single power supply • Up to 50 mA p-p modulation current	Original	18-terminal F0513005L F0513005L F0513 LM324 sumitomo Laser diode driver	PDF
InP Laser Buried Heterostructure Abstract: Laser InP buried heterostructure InP Laser BH laser InP BH Laser InP MF50 10 gb laser diode Contextual Info: Highly Reliable AlGaInAs Buried Heterostructure Lasers for Uncooled 10Gb/s Direct Modulation N. Ikoma, T. Kawahara, N. Kaida, M. Murata, A. Moto, and T. Nakabayashi Transmission Devices R&D Laboratories, Sumitomo Electric Industries ltd.,1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan	Original	10Gb/s 000hours) 10-Gb/s InP Laser Buried Heterostructure Laser InP buried heterostructure InP Laser BH laser InP BH Laser InP MF50 10 gb laser diode	PDF
MIL-DTL-27500 Abstract: M22759/34 m27500 transfer impedance MIL-W-81381 M27500- twisted pair MIL-W-22759/44 m27500 m27500 sd XLETFE MIL-W-22759/34 Contextual Info: Aerospace Wire and Cable Mil-W-22759 Mil-DTL-22759 Mil-DTL-27500 JWXLT Lightweight XLTFE Specialty Products JUDD WIRE INC. A member of the Sumitomo Electric Industries group of companies JUDD WIRE INC. Manufacturers of Superior Insulation Systems for Electrical Aerospace Wire and Cable	Original	Mil-W-22759 Mil-DTL-22759 Mil-DTL-27500 Mil-W-22759/32 MIL-DTL-27500 M22759/34 m27500 transfer impedance MIL-W-81381 M27500- twisted pair MIL-W-22759/44 m27500 m27500 sd XLETFE MIL-W-22759/34	PDF
0.1micro farad capacitor datasheet Abstract: F0321818M F0321818Q RL-50 GAAS FET AMPLIFIER for optical receiver Contextual Info: Preliminary SUMITOMO ELECTRIC INDUSTRIES, LTD. 01.02.19 ♦ Features F0321818Q 2 GHz Bandwidth • -5 V single power supply • 20 dB typical gain • 2.0 GHz typical -3 dB cutoff frequency • On-chip matching to 50 Ω • 55 mA typical operating current	Original	F0321818Q 20-lead F0321818Q F0321818Q. F0321818M 0.1micro farad capacitor datasheet RL-50 GAAS FET AMPLIFIER for optical receiver	PDF
F0515 Abstract: F0515005L 18-terminal LM324 laser APC CIRCUIT Contextual Info: F0515005L 5 Gbps Laser Diode Driver SUMITOMO ELECTRIC INDUSTRIES, LTD. 00.02.24 ♦ Features F0515005L 5 Gbps NRZ Data Rate • Up to 5 Gbps high speed operation • Typical 110 psec rise and fall time • Differential ECL compatible interface • -5.2 V single power supply	Original	F0515005L 18-terminal F0515005L F0515 LM324 laser APC CIRCUIT	PDF
F0321818M Contextual Info: SUMITOMO ELECTRIC INDUSTRIES, LTD. 01.02.19 ♦ Features • +5 V single power supply • 20 dB typical gain • 2.0 GHz typical -3 dB cutoff frequency • On-chip matching to 50 Ω • 55 mA typical operating current • Low-cost 18-lead MFP package • Differential input and output	Original	18-lead F0321818M F0321818M F0321818M.	PDF
EMM5068VU Abstract: MMIC MAR-6 EMM5068VUT EMM5068 MAR-2 MMIC RO4003 95GHZ 21373 power amplifier mmic EMM506 Contextual Info: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages	Original	EMM5068VU EMM5068VU MMIC MAR-6 EMM5068VUT EMM5068 MAR-2 MMIC RO4003 95GHZ 21373 power amplifier mmic EMM506	PDF
EMM5075VU Abstract: EMM5075 EMM5075VUT Rogers RO4003 RO4003 power amplifier mmic Contextual Info: EMM5075VU Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 12.7~15.4GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) Device DESCRIPTION	Original	EMM5075VU EMM5075VU 1200mA EMM5075 EMM5075VUT Rogers RO4003 RO4003 power amplifier mmic	PDF
EMM5832VU Abstract: EMM5832 k-band amplifier C 1162 RO4003 8-12 GHz power amplifier mmic 40 dBm power amplifier mmic Contextual Info: EMM5832VU K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=31.0dBm typ. ・High Linear Gain: GL=20.0dB (typ.) ・Broad Band: 21.2~26.5GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5832VU is a MMIC amplifier that contains a four-stage	Original	EMM5832VU EMM5832VU 800mA EMM5832 k-band amplifier C 1162 RO4003 8-12 GHz power amplifier mmic 40 dBm power amplifier mmic	PDF
EMM5837V1BT Abstract: power amplifier mmic Contextual Info: EMM5837V1B K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band:21.2～23.6GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The EMM5837V1B is a MMIC amplifier that contains a four-stage	Original	EMM5837V1B EMM5837V1B EMM5837V1BT power amplifier mmic	PDF

SUMITOMO METAL Search Results

SUMITOMO METAL Result Highlights (5)

SUMITOMO METAL Datasheets Context Search

Sumitomo Metal

sumitomo 6600

SUMITOMO EME6600

sumitomo epoxy

EME 7320

QMI 509 epoxy

EGN13B200IV-R

JESD22-A114

EGN28B400M1B-R

JESD22-A114

EGN28B200IV-R

sumitomo CWDM

FLL57MK

ELPIDA

F0513

InP Laser Buried Heterostructure

MIL-DTL-27500

0.1micro farad capacitor datasheet

F0515

F0321818M

EMM5068VU

EMM5075VU

EMM5832VU

EMM5837V1BT