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    Text: SUN04A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =2.1Ω (Typ.)  Low gate charge: Qg=12nC (Typ.)  Low reverse transfer capacitance: Crss=6.3pF (Typ.)  Lower EMI noise  RoHS compliant device


    Original     		PDF SUN04A60F O-220F-3L SUN04A60 SDB20D45 09-JUL-14 KSD-T0O156-000