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Large-Signal Characterization and Modeling of MOSFET for PA Applications
Abstract: NONLINEAR MODEL LDMOS
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RTUIF-28 inter-m2004 Large-Signal Characterization and Modeling of MOSFET for PA Applications NONLINEAR MODEL LDMOS | |
Large-signal Modeling of SiGe HBT for PA ApplicationsContextual Info: IEEE BCTM 6.1 Large-signal Modeling of SiGe HBT for PA Applications Tzung-Yin Lee, Sunyoung Lee, Pete Zampardi, and Jongchan Kang Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617, USA maximizing the power added efficiency PAE . Recent emphasis for extended battery life in a metropolitan |
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Modeling of SOI FET for RF Switch ApplicationsContextual Info: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is |
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12-stacked 12stacked Modeling of SOI FET for RF Switch Applications | |
sje 607
Abstract: SUNYO hamming code FPGA IGLOO2 COOLRUNNER-II examples 8-bit brentkung adder
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