SUPERSOT 6 Search Results

FMMT620

Abstract: 450-170 FMMT620TA FMMT620TC PD6255 DSA003701
Contextual Info: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users

Supersot6

Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
Contextual Info: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5

supersot 6 TE

Contextual Info: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige

marking Y1 transistor

Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

D marking PNP

Abstract: MARKING IC RP 6 PR63
Contextual Info: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge

marking Y1 transistor

Abstract: fairchild pin 1 marking
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

transistor Y2

Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
Contextual Info: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful

ZXT10P12DE6

Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Contextual Info: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

FMMT723

Abstract: FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 FMMT717 FMMT718 FMMT720 FMMT722
Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.

FMMT617

Abstract: FMMT-617 FMMT618 FMMT619 FMMT624 FMMT625 FMMT717 V12E
Contextual Info: SuperSOT FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 SOT23 NPN SILICON POWER TRANSISTORS SWITCHING ISSUE 3- NOVEMBER Id 1995 FEATURES ‘ 625mW POWER DISSIPATION * Ic CONT 3A * 12A Peak Pulse Current * Excellent HFE Characteristics * Extremely Low Saturation Voltage E.g. 8mV Typ.

FMMT619

Abstract: FMMT617 FMMT618 FMMT624 FMMT625 FMMT717 FMMT718 FMMT720 FMMT722 FMMT723
Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.

FMMT

Abstract: FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 FMMT717 FMMT718 FMMT720 FMMT722
Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.

FT717

Abstract: fT723 FT619 BR-C ic108 FT624 FT625 FT618 I.C. 165
Contextual Info: 上海毅钧商贸有限公司 Http:www.ic108.com SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed)

Contextual Info: FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier • This device has matched dies in SuperSOT-6. C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Absolute Maximum Ratings* Value Units VCEO Symbol Collector-Emitter Voltage Parameter

FMBA14

Contextual Info: FMBA14 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1N NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol

NPN SOT23-6

Abstract: ZXT10N20DE6 ZXT10N20DE6TA ZXT10N20DE6TC DSA0037433
Contextual Info: ZXT10N20DE6 SuperSOT 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

NPN SOT23-6

Abstract: ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC DSA0037435
Contextual Info: ZXT10N50DE6 SuperSOT 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

sot23-6 marking 718

Abstract: 718 SOT23 ZXT10P20DE6 ZXT10P20DE6TA ZXT10P20DE6TC DSA0037439
Contextual Info: ZXT10P20DE6 SuperSOT 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N FMB100
Contextual Info: FMB100 FMB100 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .NA Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings*

Contextual Info: FMBA06 FMBA06 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1G Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR F852 NDH8504P
Contextual Info: February 1997 NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: F/MRCHII-D SEM ICONDUCTO R D ecem ber 1996 tm NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,

NPN SOT23-6

Abstract: ZXT10N15DE6 ZXT10N15DE6TA ZXT10N15DE6TC DSA0037431 CM13A
Contextual Info: ZXT10N15DE6 SuperSOT 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

Contextual Info: SEM ICONDUCTOR tm FSBCW30 SuperSOT -3 PNP General Purpose Amplifier T his device is designed for general purpose m edium power am plifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. Absolute Maximum RâtinÇjS