SURGE CURRENT DIODE 1N4007 Search Results

6A10 DIODE

Abstract: 6A4 DIODE diode rl207 diode P600A diode RL205 p600m DIODE diode 6a6 diode 6a4 p600b diode DIODE 6A10
Contextual Info: Axial Diode Series DIODE RECTIFIERS GENERAL PURPOSE Maximum Peak TYPE Reverse Maximum Average Rectified Maximum Maximum Forward Peak Reverse Current at Half-wave Resistive Surge Current Current at load 50HZ Voltage 50HZ PRV and Maximum Forward Voltage at TA=25°C

DIODE 1N4004G

Abstract: 1N4005G 1N4006G 1N4001G 1N4007G 4002G 4005G 4006G 1N4007G-TB diode 1N4007G
Contextual Info: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features ! Glass Passivated Die Construction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

diode 1N4001 specifications

Contextual Info: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic

Contextual Info: 1N4001G – 1N4007G 1.0A GLASS PASSIVATED STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data

Contextual Info: 1N4001G – 1N4007G WTE POWER SEMICONDUCTORS Pb 1.0A GLASS PASSIVATED STANDARD DIODE Features  Glass Passivated Die Construction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data

Contextual Info: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per

diode 1N4001 specifications

Abstract: CHARACTERISTICS DIODE 1N4007 free diode 1n4001 specifications of 1n4007 diode 1N4001-1N4007 datasheet 1N4001/1n4007 diode datasheet DIODE 1N4001 1N4001 DIODE SPECIFICATIONS DIODE 1N4001 WORKING 1N400X
Contextual Info: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data C Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per

1N400x

Contextual Info: 1N4001 – 1N4007 1.0A STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data       

Contextual Info: 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch mm • Low forward voltage drop • High current capability • High surge current capability .034(.86) 1.0(25.4)MIN. .028(.71)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4007G DIODE GLASS PASSIVATED SILICON RECTIFIER „ DESCRIPTION The UTC 1N4007G is a glass passivated silicon rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N4007G DIODE GLASS PASSIVATED SILICON RECTIFIER „ DESCRIPTION The UTC 1N4007G is a glass passivated silicon rectifier, it uses UTC’s advanced technology to provide customers with high forward surge current and low reverse leakage, etc.

CHARACTERISTICS DIODE 1N4007

Abstract: DIODE 1N4004 DIODE 1N4001 DIODE 1N4007 equivalent components of diode 1n4001 DIODE 1N4002 DIODE 1n4005 1N4007 DIODE data sheet 1N4007 diode 1n4007 diode datasheet
Contextual Info: 1N4001 thru 1N4007 1.0A Standard Diode Features: • • • • • Diffused Junction Low Forward Voltage Drop High Current Capability High Surge Current Capability RoHS Compliant Mechanical Data: • • • • • • Case: DO−41, Molded Plastic Terminals: Plated Leads Solderable per MIL−STD−202, Method 208

1N4007 operating frequency

Abstract: CHARACTERISTICS DIODE 1N4007 LN4007 diode ln4007 1N4007 RECTIFIER DIODE LN4004 diode DIODE 1N4001 surge current DIODE 1N4007 DIODE 1N4001 characteristics LN4004
Contextual Info: SILICON RECTIFIER DIODE ÎA/IOO— 1000V 1N4001~1N4007 FEATURES • Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ° High Surge Capability « 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S \ Voltage Rating type

1N4007 operating frequency

Abstract: IC 1N4007 DIODE 1N4001 RESISTANCE 1M4002 1N4001 SILICON diode 1N4007 diode frequency DIODE 1N4001 characteristics 1N4001 current rating diode 1N4001 CHARACTERISTICS DIODE 1N4007 rating
Contextual Info: SILICON RECTIFIER DIODE ia 1N4001— 1N4007 / i o o ~ io o o v FEATURES ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current 0 High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S "\^TYPE Voltage Rating

6A4 DIODE

Abstract: AX-52 diode diode 6a4 diode 6a6 diode rL257 A106 6A1 diode 6A6 DIODE diode 6A2 1N4002
Contextual Info: DIODE RECTIFIERS • 1.0A THRU 6.0A • 50V THRU 1000V CURRENT A 1.0 1.5 3.0 3.0 6.0 @ TEMP "C 25 25 25 25 25 SURGE (A) 50 50 200 150 400 50V 1N4001 J-05 RL251 1N5400 6A-05 100 V 1N4002 0-1 RL252 1N5401 6A-1 200V 1N4003 J-2 RL253 1N5402 6A-2 400V 1N4004

Contextual Info: 1N4001~1N4007 1.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions

CHARACTERISTICS DIODE 1N4007

Abstract: 1N4007 DIODE 1N4001 characteristics 1N4007 OF DIODE CHARACTERISTICS DIODE 1N4006 DIODE 1N4001 VALUE OF MAX CURRENT surge current DIODE 1N4007 1N4007 rectifier diode OF 1N4001 DIODE 1N4007 marking CD
Contextual Info: 1N4001~1N4007 1.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions

1N4007 BL

Abstract: 1n4004 bl
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE Low cost SERIES 1N4001 - 1N4007

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES 1N4001 - 1N4007 ACTUAL SIZE OF DO-41 PACKAGE

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP GENERAL PURPOSE SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES 1N4001 - 1N4007 ACTUAL SIZE OF DO-41 PACKAGE

Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPPD-100-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 1 AMP SOFT GLASS PASSIVATED SILICON DIODES MECHANICAL SPECIFICATION FEATURES SERIES 1N4001G - 1N4007G ACTUAL SIZE OF

DIODE 1N4007

Abstract: 1N4007 diode diode 1n4007 diotec 1N4007 BL
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE Low cost SERIES 1N4001 - 1N4007 DO - 41 Low leakage

1N4007 BL

Abstract: 1N400 DIODE 1N4001 characteristics 1N4001 general diode purpose CHARACTERISTICS DIODE 1N4007 current rating diode 1N4001 1N4007 diode H2 OF 1N4001 DIODE 1n4004 bl
Contextual Info: DIOTEC ELECTRONICS CORP. Data Sheet No. GPDP-101-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF DO-41 PACKAGE Low cost SERIES 1N4001 - 1N4007 DO - 41 Low leakage

diode rectifier 1n4001

Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
Contextual Info: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS