SWICHING FULL Search Results

FM260

Abstract: FM2100 FM220 FM230 FM240 FM250
Contextual Info: FM220 THRU FM2100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability

FM220A

Abstract: FM230A FM240A FM250A FM260A
Contextual Info: FM220A THRU FM2100A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability

Contextual Info: FM220A THRU FM2100A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability

Contextual Info: FM220 THRU FM2100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability

Contextual Info: KSC2752 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE TO -126 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage Characteristic VcBO Symbol 500 V Collector-Emitter Voltage VcEO 400 V Emitter- Base Voltage V ebo

BT137

Abstract: of TRIAC BT137 BT137 - 600 BT137-600E BT137 application note triac bt137 600 600E triac bt137 600E CDIL Bt137
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TRIAC Sensitive Gate BT137- 600E TO-220 Plastic Package T2 T1 G For use in General Purpose Bidirectional Swiching and Phase Control Applications ABSOLUTE MAXIMUM RATINGS PARAMETER

KSC2752

Contextual Info: KSC2752 KSC2752 High Speed High Voltage Swiching Industrial Use TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V

to-126 npn switching transistor 400v

Contextual Info: KSC2752 KSC2752 High Speed High Voltage Swiching Industrial Use TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V

Contextual Info: 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 www.rohm.com Product News Wide Range & High Speed Swiching 2-channel Motor Driver BD65492MUV ●Package Unit: mm BD65492MUV is 2-channel motor driver switching on output transistors in full-swing.

B1030

Abstract: high voltage swiching transistors swiching full KSC2752
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V

Contextual Info: BAV102 High Voltage, General Purpose Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to

FAIRCHILD DIODE

Abstract: FAIRCHILD DIODE SOD80
Contextual Info: BAV103 High Voltage, General Purpose Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Symbol Unit Collector- Base Voltage V cB O 500 V Collector-Emitter Voltage V cE O 400 V Emitter- Base Voltage V ebo Collector Current DC

FAIRCHILD DIODE

Contextual Info: FDLL3595 High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the

BD654

Abstract: p-channel DMOS BD65491FV
Contextual Info: 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 www.rohm.com Product News Wide Range & High Speed Swiching 1-channel Motor Driver BD65491FV ●Package Unit: mm 5.0±0.2 16 9 1 8 0.3Min. 4.4±0.2 BD65491FV is 1-channel motor driver switching on output transistors in full-swing.

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA1740TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications

FAIRCHILD DIODE

Contextual Info: FDLL485B High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the

Contextual Info: Small Signal Diode General Description A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the location of the cathode terminal which is

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1740TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter.

SMPS CIRCUIT DIAGRAM 5V 20A

Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Contextual Info: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ultrafast diode 10a 400v

Abstract: X 0238 CE
Contextual Info: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ir igbt 1200V 40A

Abstract: 20MT120UF E78996 bridge
Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery