SWITCHIG POWER SUPPLY Search Results

DC DC Converters Circuit diagrams

Abstract: ac drive electronic circuit diagram circuit diagram power SWITCHING converter circuit dc dc 100V converter circuit diagram
Contextual Info: AC/DC converter Block Diagram The operating the principle is switching regulator based on chopper form. Positive power supply The one with the external coil The one with the bulit-in coil Point A Point A 141V Input pin Output pin Switchig circuit 141V Coil connect pin

DIP28

Abstract: CDIP28 dect module 2b1q ST5421CFN ST5421CP ST5451 STLC5411FN STLC5411P STLC5412P
Contextual Info: TELECOM AND DATA COMMUNICATIONS ISDN ISDN Type Description Package , ST5410* ST5421CP ST5421CFN STLC5432 ST5451 STLC5411FN STLC5411P STLC5412FN STLC5412P STLC5444 STLC5460 STLC5464 STLC5465 STU2071B1 STU2071FN 2B1Q-U-Interface Device SID-GCI: S/T Interface Device with GCI

variable switchig power supply

Abstract: 15PIN 20PIN BH7870AKV VQFP48C
Contextual Info: i/ e l Stereo ¿zoom microphone amplifier BH787QAKV •Description •Dimension Units : mm The BH7870AKV is a zoom microphone amplifier for camcorders. Electronic volume circuit, microphone element power regulator, filter for eliminating wind noise, and external microphone input are included.

marking g20

Abstract: 2SK1658
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the MOSFET is low Gate Leakage Current, it is suitable for

2SK1482

Abstract: 2SJ196 d1567
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK1482 is N-channel vertical type MOS FET switching device which PACKAGE DRAWING Unit : mm can be directly driven from an IC operating with a 5 V single power supply.

6PIN CHARGING IC

Abstract: AN5765 Hi Voltage Regulator Circuit
Contextual Info: Panasonic CRT Heater Voltage Control 1C AN5765 • Overview Unit:mm AN5765 is an IC for controlling CRT heater voltage. This IC helps streamline of sets and reduces power consumption by a 4-value switching 5 .9 ± 0 .2 5 8 .2 ± 0 .3 7 .8 ± 0 .2 5 output circuit for heater voltage, 5V power source for microcomputers,

2SK1580

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1580 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con-

2SK1482

Abstract: d1567 2SJ196
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK1482 is N-channel vertical type MOS FET switching device which PACKAGE DRAWING Unit : mm can be directly driven from an IC operating with a 5 V single power supply.

G1563

Abstract: D1563 2SK1658 C10535E VP15-00-3 NEC MARKING surface TC236
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. 2.1 ±0.1 1.25 ±0.1 As the MOS FET is low Gate Leakage Current, it is suitable for appliances

vs5-24v

Abstract: Relays vs5-24v vs5-24 stepper relay RG2L VS5 24V vs524v DF2-L2 X61C S4 1C
Contextual Info: VS MODERN STEPPER RELAY USING ELECTRONIC SWITCHING CIRCUIT VS MODULE • High reliability and efficiency • Low power requirement • Short switching times • Economic and spacesaving • Universal application in stepper devices or counters • Suitable for most common washing methods except ultrasonic cleaning

FM bandpass filter

Contextual Info: Video ICs VCR audio signal processing system •F e a tu re s 1 Operates off dual ±po w e r supply which allows a large reduction in the number of coupling capacitors required, A built-in regulator makes it easy to construct a power supply system. 2)A built-in 2-wire serial control decoder circuit allows

bt357

Contextual Info: SGS-THOMSON IS M IlL IC T ^ O ilÊ i V N 121SP LOW SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA . . . . . . . TYPE V dss RDS on ln(*) V cc VN121SP 40 V 0.05 Q 7 A 26 V MAXIMUM CONTINUOUS OUTPUT CURRENT (#): 21 A @ Tc= 85°C 5V LOGIC LEVEL COMPATIBLE INPUT

035H

Abstract: IRFPE30
Contextual Info: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

sgs 8 r 15

Abstract: ZE 004 VN121SP
Contextual Info: VN121SP LOW SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE V DSS R DS on I n (*) VC C VN121SP 40 V 0.05 Ω 7A 26 V • ■ ■ ■ ■ ■ ■ MAXIMUM CONTINUOUS OUTPUT CURRENT (#): 21 A @ Tc= 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN

035H

Abstract: IRFPE30
Contextual Info: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

f1010

Abstract: 555 triangular wave B-989
Contextual Info: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

VN16BSP

Contextual Info: VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY TYPE V DSS R DS on I OUT V CC VN16BSP 40 V 0.06 Ω 5.6 A 26 V • ■ ■ ■ ■ ■ ■ MAXIMUM CONTINUOUS OUTPUT CURRENT :20A @ Tc = 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION

Contextual Info: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 95447A IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

KCG057QV1DB

Abstract: KCG057QV1DB-G50 CXA-LO612A-VJL B318 B319 BHR-03VS-1 G318 R320 kcg057qv1dbg50 D2245
Contextual Info: Specification KCG057QV1DB-G50 Version June 2005 Data Modul AG - www.data-modul.com Caution 1. This Kyocera LCD module has been specifically designed for use only in electronic devices in the areas of audio control, office automation, industrial control, home appliances, etc. The modules should not be

VN16BSP

Abstract: demag ds 20
Contextual Info: VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY T YPE V DSS R DS on I OUT V CC VN16BSP 40 V 0.06 Ω 5.6 A 26 V • ■ ■ ■ ■ ■ ■ MAXIMUM CONTINUOUS OUTPUT CURRENT :20A @ Tc = 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION

Contextual Info: VN16B ISO HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Table 1. General Features Type VDSS RDS on In(1) VCC VN16B 40 V 0.06  5.6 A 26 V Note: 1. Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at

VN16B

Contextual Info: VN16B ISO HIGH SIDE SMART POWER SOLID STATE RELAY Table 1. General Features Figure 1. Package Type VDSS RDS on In(1) VCC VN16B 40 V 0.06 Ω 5.6 A 26 V Note: 1. Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at

Contextual Info: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY TYP E V dss R D S(on) I0U T Vcc VN16BSP 40 V 0.06 Q. 5.6 A 26 V . MAXIMUM CONTINUOUS OUTPUT CURRENT :20A @ Tc = 85°C . 5V LOGIC LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN