SX085H045S4PU
Abstract: No abstract text available
Text: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode
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Original
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PDF
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SX073H045A4OT
SX073H045S4PT
SX085H045S4PU
SX110H045A4OU
SX110H045S4PU
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode
|
Original
|
PDF
|
SX073H045A4OT
SX073H045S4PT
SX085H045S4PU
SX110H045A4OU
SX110H045S4PU
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: New Product SX.H045.4. Series Vishay General Semiconductor Schottky Bare Die FEATURES a c e • Planar Schottky VBRM = 45 V • Low forward voltage drop • High frequency operation C (2) d b CIRCUIT DIAGRAM A (1) C (2) A (1) Notes (1) Front metallization side: Anode
|
Original
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PDF
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SX073H045A4OT
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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