SY 160 LL Search Results

2N6284

Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

transistor marking c3n

Contextual Info: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.7dB f=2G H z H igh Gain : Gain = lld B (f= 2 G H z ) MAXIMUM RATINGS (Ta = 25°C) SYM BOL CHARACTERISTIC

VQB71

Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
Contextual Info: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

se150

Contextual Info: SEMICONDUCTOR BC637 T E C H N I C A L DATA EPI TAXI AL PLANAR NPN T RA NS I ST OR HIGH C U R R E N T TRA N SISTO RS. FEA TU RES • C om plem entary to BC638. DIM M A X IM U M RATING Ta=25°C C H A R A C T E R IS T IC SY M B O L C o llector-B ase V oltage

2SB944

Abstract: 2SD12 2SD1269
Contextual Info: Power Transistors 2SD1269 2SD 1269 Silicon N P N Epitaxial P lanar Type • P ackage Dim ensions Pow er Switching C om plem entary Pair with 2 S B 9 4 4 ■ Features • Low co llector-em itter satu ration voltag e • G ood linearity of D C cu rren t gain

Contextual Info: SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1048 ISSUE 2 - FEBRUARY 1996 1-L Ci 1,_ L C? 1.1 Ci [—L-* Bi -J—1 Ei C2 Œ 1 1 b2 n E? PARTMARKING DETAIL- T1048 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L C o lle cto r-B a se V o lta g e C o lle c to r-E m itte r V o lta g e

Contextual Info: PRELIMINARY IDT7027S/L HIGH-SPEED 32Kx 16 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • T ru e D u a l-P o rte d m e m o ry cells w h ic h a llo w s im u lta ­ neous a cce ss of th e s a m e m e m o ry lo cation H ig h -sp e e d access

sj 2252 ic

Abstract: sj 2252
Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R ^ *| “j FOR VCO APPLICATION U n it in m m ] 6±0 2 MAXIMUM RATINGS Ta = 25°C C H A R A C T E R IS T IC SY M BO L C ollector-B ase V oltage RA T IN G U N IT v CBO 20 V C o lle c to r-E m itte r V oltage

Contextual Info: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM IDT7008S/L Features * * * True D ual-Ported m em ory c e lls w hich allow sim u ltan e o u s IDT7008 e a sily e x p a n d s data b u s width to 16 bits or reads of the s a m e m em ory location m ore u sin g the M aster/Slave select w hen c a s c a d in g m ore

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED 16Kx 8 DUAL-PORT STATIC RAM FEATURES: • • • M /S = L for B U S Y input o n S la v e T ru e D u a l-P o rte d m e m o ry cells w h ich a llo w s im u lta ­ • In terrupt F lag n e o u s re a d s of th e s a m e m e m o ry location

Halbleiterbauelemente DDR

Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
Contextual Info: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.

diode sy 400 8

Contextual Info: PHOTOCOUPLER KB846 GENERAL PURPOSE HIGH ISO LATION VOLTAGE SINGLE TRANSISTOR TYPE HIGH CO LLECTOR VOLTAGE PHOTOCOUPLER SERIE S FEATURES 1.High isolation voltage between input and output Viso=5000 Vrms 2.High Collector-emitter voltage (Vceo=70 V) 3.Compact dual-in-line package

Contextual Info: TC4W53F TC4W53F 2 -C H A N N E L M U L T IP L E X E R / D EM ALTIPLEXER U n it in mm +0 3 45 -0 2 The TC4W 53F is m ultiplexer with capab ilities of selection and m ixture o f an alog sig n a l and digital sign al. TC4W 53F h as 2 channel configuration.

Halbleiterbauelemente DDR

Abstract: Dioden SY 250 diode sy-250 B250C135 u103d GD244 transistor gc 301 SAM42 diode sy 166 D172C
Contextual Info: electronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz-und Kenndaten der in der DDR getertigten Halbleiterbauelemente. Die Kennwerte werden im allgemeinen für eine Umgebungs­ temperatur von 25 °C angegeben.

Contextual Info: SILICON MONOLITHIC BIPOLAR LINEAR INTEGRATED CIRCUIT TA8050AK TENTATIVE DATA 1.5A MOTOR DRIVER WITH BRAKE FUNCTION The T A 8050A K is a 1.5A bi-directional DC motor driver and it can switch forward, reverse, stop and brake mode with input D ll and DI2. Protective functions are built in

Contextual Info: T-1 3/4 5mm FULL COLOR LED LAMP AT T E N T I O N OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES PRELIMINARY SPEC Features lUNIFORM lLOW HYPER RED BLUE / GREEN Description LIGHT OUTPUT. The Hyper Red source color devices are made with DH

Contextual Info: T-1 3/4 5mm FULL COLOR LED LAMP AT T E N T I O N OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES W154A4SUKPBVGKW HYPER RED / BLUE / GREEN PRELIMINARY SPEC Features lUNIFORM lLOW Description LIGHT OUTPUT. The Hyper Red source color devices are made with DH

z80a-sio

Abstract: receiver krt 30 z80b z80 sio 80a sio Z80A Z80SIO-2 z80b sio Z8441A PS Z80ASIO-2
Contextual Info: Z 8440 280^810 Serial Input/Output Controller Product Spoclftcatlon S e p te m b e r 1983 F e a tu res • Two in d e p e n d e n t fu ll-d u p le x c h a n n e ls, w ith s e p a r a te co n tro l a n d statu s lin es for m odem s o r o th e r d e v ic e s.

Contextual Info: 10mm BAYONET BASED LED LAMP BLB101SURC-E-6V-P HYPER RED Features Description APPLICATION OF DIFFERENT ACROSS CURRENT. InGaAlP on GaAs substrate Light Emitting Diode. lBUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT lLONG LIFE. The Hyper Red source color devices are made with DH

LR33300

Abstract: LR3330 LR33310 lr33310mc40 LR33310MC-50 J14028 lsi lr33310 rt 108 LR33300MC20 LR33310MC
Contextual Info: 5304ACm 000S7b7 2DT • L L C I ST LOGIC LR33300 and LR33310 Enhanced Self-Embedding Processors User's Manual I Addendum Addendum Number A000379 Order Number for Manual J14028 Introduction This addendum to the LR33300 and LR33310 Self-Embedding™ Proces­

p32a

Abstract: S450N
Contextual Info: ANALOG DEVICES □ High-Speed /V > 10 Programmable Micropower Operational Amplifier OP-32 FEATURES • • • • • • • • • • • • • p re c is io n Programmable Supply Current. 500nA to 2mA Single Supply Operation. +3Vto+30V