SY10E404JC Search Results

Contextual Info: SY10E404 SY100E404 FINAL QUAD DIFFERENTIAL AND/NAND DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V 700ps max. propagation delay High frequency outputs Internal 75KΩ input pull-down resistors Fully compatible with Motorola 10E/100E404

SY100E404

Abstract: SY100E404JC SY100E404JCTR SY10E404 SY10E404JC SY10E404JCTR
Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q ■ Extended 100E V ee range of -4.2V to -5.5V The SY 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make

Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle

LD33 VOLTAGE REGULATOR

Abstract: LD33 VOLTAGE REGULATOR 3.3v NIKKO NR 9600 LD33 regulator TRANSISTOR si 6822 LD50 VOLTAGE REGULATOR st LD33 smd code marking ld33 LD33 VOLTAGE REGULATOR ST ld33 st
Contextual Info: Shortform Catalog January 2004 Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel +1 408 944-0800 • fax +1 408 944-1000 Micrel Shortform Catalog January 2004 2004 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any

Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTION Differential D and Q 700ps max. propagation delay High frequency outputs Extended 100E V ee range of -4.2V to -5.46V Internal 75KQ Input pull-down resistors

Z27D

Contextual Info: FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Differential D and Q Extended 100E V e e range of -4.2V to -5.5V 700ps max. propagation delay High frequency outputs Internal 75KQ input pull-down resistors ESD protection of 2000V Fully compatible with Motorola 10E/100E404

100E404

Abstract: SY100E404 SY100E404JC SY100E404JCTR SY10E404 SY10E404JC SY10E404JCTR
Contextual Info: QUAD DIFFERENTIAL AND/NAND DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle

SY100E404

Abstract: SY100E404JC SY10E404 SY10E404JC SE350
Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SEMICONDUCTOR F EA TU R E S • ■ ■ ■ ■ ■ ■ D ES C R IPTIO N Differential D and Q 700ps max. propagation delay High frequency outputs Extended 100E V ee range of -4.2V to -5.46V Internal 75KQ Input pull-down resistors

SOP8 8002 Amplifier

Abstract: SCR s838 TRANSISTOR s838 4606 MOSFET INVERTER transistor SMD DK QB Marking Code SMD CM sot-23-5 4606 inverter reg EL34 SMD MOSFET DRIVE DATASHEET 4606 voltage regulator SOT-223-4 C5 87
Contextual Info: Shortform Catalog June 2003 Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel +1 408 944-0800 • fax +1 408 944-0970 Micrel Shortform Catalog June 2003 2003 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any

ka3842 equivalent uc3842

Abstract: LP2989 CROSS lt1232 TP2330 semiconductor cross index replacement for udn2981 KA3843 ka3842 equivalent UCN5821 equivalent microsemi cross index
Contextual Info: Analog Cross Reference Allegro Sprague Part Number Direct Cross(1) Functional Cross(2) A8184 MIC5207 A8187 MIC5207 A8188 MIC5209 UCN4807 Comments MIC4807 UCN5800 MIC5800 UCN5801 MIC5801 UCN5821 MIC5821 UCN5822 MIC5822 UCN5841 MIC5841 UCN5842 MIC5842 UCN5891

Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle

Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES DESCRIPTION Differential D and Q Extended 100E V ee range of -4.2V to -5.5V 700ps max. propagation delay High frequency outputs Internal 75K£i input pull-down resistors ESD protection of 2000V

Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle

PART MARKING D0B

Abstract: MARKING d2b marking diode D2B SY100E404 SY100E404JC SY10E404 SY10E404JC SY10E404JZ
Contextual Info: • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were