SYMBOL 893 Search Results

ISO-6358

Abstract: SYA3220-M5 SYA3120-C4 SYA7140-02 SYA5120-01 SYA5240 SYA7120-02 BCV58 SYA5120-C6 01MPA
Contextual Info: 5 Port Air Operated Valve Series SYA3000/5000/7000 How to Order Thread type A, B port size Thread piping Symbol Port size M5 M5 1 8 01 1 4 02 Applicable series SYA3000 SYA5000 SYA7000 One-touch fitting Metric size Symbol Port size Applicable series C4 One-touch fitting for ø4

2sd789

Contextual Info: 2SD789 Silicon NPN Epitaxial HITACHI Application • Low frequency power amplifier • Complementary pair with 2SB 740 Outline TO-92M OD | 1 1 3 J 2 2. Collector 3. Base 1 893 2SD789 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage

Contextual Info: MMBT3906LT1 Preferred Device General Purpose Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −40 Vdc Collector −Base Voltage VCBO

AT86RF212 PCB

Abstract: AT86RF212 ATMEGA128RFA1 AT86RF230 schematic ieee electrical engineering projects AT86RF230 PCB AT86RF231 Atmel zigbee pcb atmel mcu altium
Contextual Info: Atmel AVR2010: MCU Wireless - Altium Design Package Features 8-bit Atmel Microcontrollers • MCU wireless transceiver schematic symbols and PCB footprints • Enable faster engineering design phases 1 Introduction Application Note This application note provides the Altium Designer schematic symbol and PCB

CMPSH10

Contextual Info: ON Semiconductort VHF/UHF Transistor MPSH10 NPN Silicon ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Total Device Dissipation @ TA = 25°C

TPM1919-40

Contextual Info: TPM1919-40 PRELIMINARY May 1996 TOSHIBA TPM1919-40 1. RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS SYMBOL CONDITION Ta= 25°C Ì MIN. TYP. 45.0 46.0 dBm 12.0 13.0 dB MAX. UNIT Output Power at 1dB Compression Point Pi dB Power Gain at 1dB Compression Point

Contextual Info: FLK052XV G a As F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current >d s s Test Conditions 200 300 mA - 100 - mS -1.0 -2.0 -3.5 V - V Vqs = 5V, Ids = 125mA Pinch-off Voltage vp Vos = 5V, ids =

3sk283

Abstract: Y025
Contextual Info: TOSHIBA 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK283 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm MAXIMUM RATINGS Ta = 25°C SYMBOL VG1D0 v G2DO VG1S VG2S lGl <N Oi i— CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage

SKIM600GD126DLM

Contextual Info: SKiM 600GD126DLM .  * +, -.      Absolute Maximum Ratings Symbol Conditions IGBT /0 1 * -  1 * 3,4 - :; Trench IGBT modules SKiM 600GD126DLM / * ?44 /> /0 B +4 /> /0( C 3+44 / 3+44 / ,+6   5 * 74 - 893 :; * +<"=;> /*?44/

FLC161

Contextual Info: FLC161WI C-Kand Power j ü A s ! ET s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C IfeMn Symbol Condition Rating UMt Drain-Source Voltage Vd S 15 V Gate-Source Voltage Vg S -5 V 7.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature

zd2500

Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Contextual Info: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS

Contextual Info: FLR056XV GaAs F E T and H E M T Chips ELECTRICAL CHARACTERISTI CS Ambient Temperature Ta=25° C Hem Test Conditions Symbol Saturated Drain Current IDSS - 100 - mS -1.0 -2.0 -3.5 V -4 - - V 25 26 - dBm 7.0 8.0 - dB - 29 - % - - 40 °C/W V q s = 3V, Id s = 125mA

FLK102

Contextual Info: F LK102 XV GciAs F E T a nd H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current Test Conditions IDSS 400 600 mA - 200 - mS -1.0 -2.0 -3.5 V -5 - - V 29 30 - dBm 5.5 6.5 - dB - 31 - % V q s = 5V>!dS = 250mA

MS505

Abstract: SM8505 data code
Contextual Info: S M8505 • ABSOLUTE MAXIMUM RATINGS Item Supply voltage Input voltage Output voltage Storage temperature * Symbol 1 Vdd - Vss -0.3 to +7.0 V Vm V Vour Vss-0 3 to Vdd +0.3 V T stg -40fco+125 °c Pw 250 mW Tsu> 260 “C 10 Sec Soldering time ■ Unit Vss-0.3 to Vdd +0.3

Contextual Info: SK150GB066T  /. 0,     1   Absolute Maximum Ratings Symbol Conditions IGBT 23  89 4 ) /. 0 4 ) -7. 0 89) /  6+ ( -*. #  ) 7+ 0 -+6 # *+ # : /+ ( 4 ) -/. 0 6 >  ) /. 0 -*. #  ) 7+ 0 ?. # *+ #  ( ) *6+ (; (!2 < /+ (;

Contextual Info: SK75GB066T  /. 0,     1   Absolute Maximum Ratings Symbol Conditions IGBT 23  89 4 ) /. 0 4 ) -7. 0 89) /  6+ ( 7- #  ) 7+ 0 .6 # -.+ # : /+ ( 4 ) -/. 0 6 >  ) /. 0 6/ #  ) 7+ 0 ?7 # -.+ # *A. #  ( ) *6+ (; (!2 < /+ (;

Semikron Semitop 3 SK 10 GHR

Abstract: SK 10 GHR 123 2 SEMIKRON SK 10 GHR 123 2 ghr 11 SK 69 DIODE semitop 3 sk 10 ghr 123 semikron sk 10 ghr 123 i freewheeling diode 5A C333
Contextual Info: SK 10 GHR 123 I Absolute Maximum Ratings Symbol Conditions IGBT ;< ;&<) % %A # 2 89 :!        # 2 89 >3 :?  B / ? # 2 89 >3 :? #D Values Units /833 . 83 /@ // C8 88 ; ; 5 5 $ 63 111 E /93 : /> /8 C@ 86 5 5 $ 63 111 E /93

PowerSO-10TM

Abstract: vn330sp
Contextual Info: VN330SP 8932 QUAD HIGH SIDE SMART POWER SOLID STATE RELAY General Features Type Vdemag(*) RDSon(*) Iout(*) VCC VN330SP(8932) VCC-55V 0.32Ω(*) 36V 1A PowerSO-10TM (*)Per channel. (*)at TJ = 85°C Features • OUTPUT CURRENT : 1A PER CHANNEL ■ DIGITAL INPUT CLAMPED AT 32V MINIMUM

VN330SP

Abstract: 8932
Contextual Info: VN330SP 8932 QUAD HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Table 1. General Features Type Vdemag(*) RDSon (*) Iout (*) Vcc VN330SP(8932) VCC-55V 0.32Ω (*) 1A 36V (*) Per channel (*) at Tj=85°C • OUTPUT CURRENT: 1A PER CHANNEL ■ DIGITAL INPUTS CLAMPED AT 32V MINIMUM

amplifier and comparator

Contextual Info: Rev.1.0 MINI ANALOG SERIES CMOS OPERATIONAL AMPLIFIER AND COMPARATOR S-893XXA Series The mini-analog series mounts a general purpose analog circuit within a small package. The S-893XXA Series is a IC having a CMOS operational amplifier and comparator in one package that can be driven by lower voltage

tube 8933

Abstract: VN340SP
Contextual Info: VN340SP 8933 QUAD HIGH SIDE SMART POWER SOLID STATE RELAY TYPE Vdemag(*) RDSon (*) IOUT (*) VCC VN340SP(8933) VCC-55V 0.2Ω 1A 36 V (*) Per channel n OUTPUT CURRENT: 1A PER CHANNEL n DIGITAL I/O’s CLAMPED AT 32V MINIMUM VOLTAGE n PROTECTION AGAINST SHORTED LOAD

Contextual Info: F U J I T S U M I C R O E L E C T R O N I C S T7 d F | 3 7 4 ^ 5 Q 0 Q 4 7 3 3 2 J~r-52-3 3 -U Preliminary FUJITSU Advanced Products O ctober 1966 Edition 1.0 • M B 89311 C M O S Floppy Disk Controller/Form atter D escription The Fujitsu MB89311 is a floppy disk controller/formatter FDC

VN330SP

Abstract: 8932
Contextual Info: VN330SP 8932 QUAD HIGH SIDE SMART POWER SOLID STATE RELAY General Features Type Vdemag(*) RDSon(*) Iout(*) VCC VN330SP(8932) VCC-55V 0.32Ω(*) 36V 1A PowerSO-10TM (*)Per channel. (*)at TJ = 85°C Features Description • OUTPUT CURRENT : 1A PER CHANNEL

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6246 Product Preview 512K x 8 Bit Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 893-01 T h e M C M 6 2 4 6 is a 4 ,1 9 4 ,3 0 4 b it s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d as 5 2 4 ,2 8 8 w o rd s o f 8 b its , fa b ric a te d u s in g h ig h -p e rfo rm a n c e s ilic o n -g a te C M O S te c h ­