SYMBOLES IRM VRM Search Results

Contextual Info: SCHOTTKY BARRIER DIODE MODULE PE60Q04N 66A/40V FEATURES • Three - Arms, Cathode Common to Base Plate ° Low Forward Voltage Drop • Low Power Loss, High Efficiency 0 High Surge Capability MAXIMUM RATINGS \ type Voltage Rating PE60Q04N - Unit Symboles.

Schottky Barrier Diodes

Abstract: symboles IRM VRM
Contextual Info: SCHOTTKY BARRIER DIODE 2 7 .7 A / 6 0 — 90V C 25 T09 Q C 2 5 T 1 0 Q SQUARE-PAK FEATU R ES 0 Similar to TO-263AB Case, Surface Mount Device 0 Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency » High Surge Capability

Contextual Info: SCHOTTKY BARRIER DIODE C60P05Q C60P06Q 66A/50— 60V FEATURES • Similar to TO-247AC TO-3P Case ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency • High Surge Capability • 30 Volts through 60 Volts Types Available

Contextual Info: SCHOTTKY BARRIER DIODE MODULE PE80QL02N PE80QL03N 89 A / 2 o ~ s o v FEATU R E S °Three - Arms, Cathode Common to Base Plate ° Extremely Low Forward Voltage Drop » Low Power Loss, High Efficiency ° High Surge Capability MAXIMUM R ATIN G S '\TYPE PE 8 0 Q L 0 3 N

Contextual Info: 2VQ09CT 2VQ10CT 2VQ09CTF 2VQ10CTF 2.2A/90— 100V SCHOTTKY BARRIER DIODE FEATURES « TO-251AA Case »TO-252AA Case, Surface Mount Device 0 Dual Diodes - Cathode Common ° Low Forward Voltage Drop Low Power Loss ° High Surge Capability • 30 Volts thru 100 Volts

Contextual Info: SCHOTTKY BARRIER DIODE 6VQ03CT 6VQ04CT 6VQ03CTF 6VQ04CTF 6.6A/30—40V FEATURES ° TO-251AA Case «TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common • Low Forward Voltage Drop ° Low Power Loss 6VQ*•CTF TO-252AA 0 High Surge Capability

Contextual Info: SCHOTTKY BARRIER DIODE C60P03Q C60P04Q 6 6 A /3 0 ~ 4 0 V FEATU R ES 15.9i.626 b 3.6 .142) irr a i tm « 15.3Ì.0 •Similar to TO-247AC (TO-3P) Case ° Dual Diodes - Cathode Common 20.3{ 800) 10.7(775) » Low forward Voltage Drop • Low Power Loss, High Efficiency

schottky diode 43t

Contextual Info: SCHOTTKY BARRIER DIODE C25T05Q C25T06Q 27.7A /50~ 60V 4.8 .189l 4.4Ü73 * SQUARE-PAK f 10.61.4171 I 9.6Ç378) 10.K.398) 8.5U35S 1.81.071)* 1.4(055) 1. "l.2(.047) ^ 0 -0 .3 (.0 12) FEATURES I.4(.055) I nscössp * Similar to TO-263AB Case, Surface, Mount Device

Contextual Info: SCHOTTKY BARRIER DIODE 4VQ09CT 4VQ10CT 4VQ09CTF 4VQ10CTF 4.4A/90— 100V FEATURES °TO-251AA C as e »TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common ° Low Forward Voltage Drop ° Low Power Loss ° High Surge Capability ° 30 Volts thru 100 Volts

FAG 32 diode

Abstract: FAG 14 diode 1AM Diode
Contextual Info: SCHOTTKY BARRIER DIODE C30P05Q C30P06Q 33A/50~ 60V FEATURES 4.7 .185 ° Similar to TO-247AC (TO-3P) Case n ' J 15.9C.«26)_ 15.3t.602) l _ 5.7^.224) ° Dual Diodes - Cathode Common S T~ i) - è Y f y \ ° Low Forward. Voltage Drop 4.31169) 3.7(.145) l ° Low Power Loss, High Efficiency

Contextual Info: SCHOTTKY BARRIER DIODE 27.7A/5 0 — 60V C25P05Q C25P06Q FEATURES • Similar to TO-247AC TO-3P Case 5.3(.2Q9) 4.71.185) . 15.9i.626) . 3 .6 (.1 4 2 l„ ,. i r'i5-&6ffin^3.4U34>D1A 5.71.224) 5.'3(.M8) « Dual Diodes - Cathode Common 20.3(.800) 19.7i.775)

DIODE 6AA

Abstract: 2VQ09CT 2VQ09CTF 2VQ10CT 2VQ10CTF
Contextual Info: 2VQ09CT 2VQ10CT 2VQ09CTF 2VQ10CTF 2.2A/90— 100V SCHOTTKY BARRIER DIODE FEA TU RES ° TO-251AA Case »TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common » Low Forward Voltage Drop Low Power Loss ° High Surge Capability • 30 Volts thru 100 Volts

I251 diode

Abstract: I251 252AA 2VQ05CT 2VQ05CTF 2VQ06CT 2VQ06CTF
Contextual Info: SCHOTTKY BARRIER DIODE 2VQ05CT 2VQ06CT 2VQ05CTF 2VQ06CTF 2.2A/50~60V FEATURES • TO-251AA Case • TO-252AA Case, Surface Mount Device ° Dual Diodes - Cathode Common • Low Forward Voltage Drop ° Low Power Loss ° High Surge Capability » 30 Volts thru 100 Volts

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP