SYNCHRONOUS NOR FLASH Search Results

BA204

Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
Contextual Info: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)

BA379

Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Contextual Info: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

ba508

Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Contextual Info: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary

transistor A1624

Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
Contextual Info: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.

ba153

Abstract: BA138
Contextual Info: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode

BA246

Abstract: BA139 BA257 ba153 BA242 BA207 ba137 BA138 diode BA142 BA249
Contextual Info: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode

BA425

Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

BA339

Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

Contextual Info: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

ba508

Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
Contextual Info: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz

VFBGA 112-ball Pb free

Abstract: s29ns-n_00 S29NS-N S30MS-P S75NS128NBF S75NS128NBG S75NS-N MMB112-11
Contextual Info: S75NS-N S29NS-N: MirrorBit 1.8 Volt-only Simultaneous Read/ Write, Burst-mode Multiplexed Flash NOR Interface S30MS-P: ORNAND™ Flash (NAND interface) Multiplexed Synchronous pSRAM S75NS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion

K8S2815ET

Abstract: samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT
Contextual Info: Synchronous burst mode register setting for NOR Application Note Version 1.0, May-2009 Samsung Electronics Copyright ⓒ 2006 Samsung Electronics Co.,LTD. Copyright 2004 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung

GPMC

Abstract: synchronous nor flash S29JL-J Toggle DDR NAND flash AM3503 S29AL-J DDR2 SDRAM LCD MPU interface 1 GB Spansion Flash GPMC application note PowerVR
Contextual Info: Using Spansion Flash Devices with TI Sitara - Based on AM3517 Application Note Publication Number Using_Spansion_Flash_with_TI_Sitara_AN Revision 01 Issue Date October 18, 2010 A pplication Note Table of Contents 2 1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Numonyx admux

Abstract: JZ58F0101M0Y0GE SCSP M18 JZ58F0085M0Y0GF numonyx nand flash Intel nor flash 1024-Mbit PSRAM Numonyx StrataFlash M18
Contextual Info: Numonyx StrataFlash Cellular Memory M18 M18 SCSP Family with Synchronous PSRAM, x16 Shared Bus, 10x10 PoP Ballout Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash Die Density: 512Mbit-1Gbit — PSRAM Die Density: 128-256Mbit

numonyx 106 ball

Abstract: numonyx 107-ball Numonyx StrataFlash M18
Contextual Info: Numonyx StrataFlash Wireless Memory L18 SCSP 768-Mbit L18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 128 or 256-Mbit — PSRAM Die Density: 32 or 64-Mbit — x16 Non-Mux or ADMux I/O Interface Option

Numonyx admux

Abstract: PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h
Contextual Info: Numonyx Wireless Flash Memory W18 SCSP 128-Mbit W18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option

NAND read disturb

Abstract: SST79LF008 SST88VP1107 SST88VP1107-80-5C-LBSE 805W error correction code mlc PSRAM 256 FLash
Contextual Info: All-in-OneMemory SST88VP1107 SST79LF008 Notebook System Controller with 8 Mbit LPC Firmware Flash Fact Sheet FEATURES: • All-in-OneMemory: Managed Memory Subsystem for Code and Data in a Single Package – Execute-in-place XIP Non-volatile area - NOR area

K9LAG08UOM

Abstract: K9LAG08UOM-2GB K9LAG08 Samsung MLC K9LAG08U Spansion S29GL512P samsung k9lag08uom K9LAG AN3998 Samsung 256 Gbit nand
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3998 Rev. 0, 03/2010 i.MX35 Memories SCL and MCL NAND Flash, SDRAM SDR, mDDR, DDR2, MMC/SDIO, SRAM, USB2.0 OTG, and ATA by Multimedia Applications Division Freescale Semiconductor, Inc. Austin, TX

SANDISK NAND ID code

Abstract: Sandisk TSOP MICRON NAND MLC DATASHEET intel nand flash transistor poly3 SANDISK NAND NAND FLASH BGA Datasheet Micron MLC Sandisk NAND Flash memory controller ecc nand flash gbit
Contextual Info: P E R S P E C T I V E S O N P O R T A B L E D E S I G N Flash developments empower portables Flash chip sizes are shrinking as power goes down, yet the number of package options and IC technologies are exploding. T echnological innovation and a buyer’s market are combining to

synchronous nor flash

Abstract: TN-45-23 TN-45-22 NOR Flash memory controller BCR01 TN4523 micron nor Flash
Contextual Info: TN-45-23: Designing with CellularRAM on a NOR Bus Introduction Technical Note Designing with CellularRAM Memory on a NOR Flash Bus Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM, early-generation asynchronous, and page PSRAM. But they also offer a burst

Contextual Info: Rev. 1.2, Sep. 2010 K8S6815ET B D 64Mb D-die SLC NOR FLASH 7.5x5, 44FBGA, 8M Partition, x16, Muxed Burst, 8Banks 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: Rev. 1.0, Nov. 2010 K8A2815ET B E 128Mb E-die NOR FLASH 8M x16, Sync Burst, Page Mode, Multi Bank 1.7V to 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: TUSB6015 SLLS937 REVISION 1.4 SEPTEMBER 12, 2008 TUSB6015 USB 2.0 High Speed Peripheral Controller Data Sheet FEATURES DESCRIPTION ̇ The TUSB6015 is a USB 2.0 HS Peripheral Controller designed for seamless interface to an external Host processor through the NOR FLASH-like interface.

TC17xx

Abstract: PQFP80 TC17X M58BW M58BW016 M58BW016D M58BW032 MPC5554 FLNORAUT0405 NOR FLASH
Contextual Info: M58BW NOR Flash memories Automotive Flash memory solutions with burst mode Designed for automotive applications, STMicroelectronics’ M58BW016 16Mb and M58BW032 (32Mb) Flash memories, are built on proven 0.13µm technology. Featuring a wide operating-temperature range,