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    SYNCHRONOUS NOR FLASH Search Results

    SYNCHRONOUS NOR FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-USB2AMBMMC-001 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-001 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 1m (3.3') Datasheet
    CS-USB3IN1WHT-000 Amphenol Cables on Demand Amphenol CS-USB3IN1WHT-000 3-in-1 USB 2.0 Universal Apple/Android Charge & Sync Cable Adapter - USB Type A Male In - Apple Lightning (8-Pin) / Apple 30-Pin / USB Micro-B (Android) Male Out - White Datasheet
    CS-USB2AMBMMC-002 Amphenol Cables on Demand Amphenol CS-USB2AMBMMC-002 Amphenol USB 2.0 High Speed Certified [480 Mbps] USB Type A to Micro B Cable - USB 2.0 Type A Male to Micro B Male [Android Sync + 28 AWG Fast Charge Ready] 2m (6.6') Datasheet
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    54F02/BCA Rochester Electronics LLC NOR GATE; QUAD 2-INPUT Visit Rochester Electronics LLC Buy

    SYNCHRONOUS NOR FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA204

    Abstract: ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153
    Text: Preliminary MCP MEMORY KBF0x0800M Document Title Multi-Chip Package MEMORY 128M Bit 8Mx16 Synchronous Burst , Multi Bank NOR Flash *2 / 64M Bit(4Mx16) Synchronous Burst UtRAM *2 Revision History Revision No. History 0.0 Draft Date Initial Draft (128M NOR Flash M-die_rev0.7)


    Original     		PDF KBF0x0800M 8Mx16) 4Mx16) 115-Ball 80x13 BA204 ba148 BA238 SAMSUNG MCP BA167 MCP MEMORY BA262 BA259 UtRAM Density BA153

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


    Original     		PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    transistor A1624

    Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
    Text: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF K5N1229ACD-BQ12 512Mb 128Mb transistor A1624 ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N

    ba153

    Abstract: BA138
    Text: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode


    Original     		PDF K8A2815ET K8S28158 K8S2815E 000000H 64-Ball ba153 BA138

    BA246

    Abstract: BA139 BA257 ba153 BA242 BA207 ba137 BA138 diode BA142 BA249
    Text: K8A2815ET B M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode


    Original     		PDF K8A2815ET K8S28158 K8S2815E 000000H 64-Ball BA246 BA139 BA257 ba153 BA242 BA207 ba137 BA138 diode BA142 BA249

    BA425

    Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
    Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA425 BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns---

    ba508

    Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
    Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- ba508 BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329

    VFBGA 112-ball Pb free

    Abstract: s29ns-n_00 S29NS-N S30MS-P S75NS128NBF S75NS128NBG S75NS-N MMB112-11
    Text: S75NS-N S29NS-N: MirrorBit 1.8 Volt-only Simultaneous Read/ Write, Burst-mode Multiplexed Flash NOR Interface S30MS-P: ORNAND™ Flash (NAND interface) Multiplexed Synchronous pSRAM S75NS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S75NS-N S29NS-N: S30MS-P: S75NS-N VFBGA 112-ball Pb free s29ns-n_00 S29NS-N S30MS-P S75NS128NBF S75NS128NBG MMB112-11

    K8S2815ET

    Abstract: samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT
    Text: Synchronous burst mode register setting for NOR Application Note Version 1.0, May-2009 Samsung Electronics Copyright ⓒ 2006 Samsung Electronics Co.,LTD. Copyright 2004 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


    Original     		PDF May-2009 UINT16; UINT16 0x555 512Mbit, K8S2815ET samsung nor flash 128M-BIT 0x55H K8S6415ET K8F1215E 0x555 128-MBIT

    GPMC

    Abstract: synchronous nor flash S29JL-J Toggle DDR NAND flash AM3503 S29AL-J DDR2 SDRAM LCD MPU interface 1 GB Spansion Flash GPMC application note PowerVR
    Text: Using Spansion Flash Devices with TI Sitara - Based on AM3517 Application Note Publication Number Using_Spansion_Flash_with_TI_Sitara_AN Revision 01 Issue Date October 18, 2010 A pplication Note Table of Contents 2 1. Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original     		PDF AM3517 GPMC synchronous nor flash S29JL-J Toggle DDR NAND flash AM3503 S29AL-J DDR2 SDRAM LCD MPU interface 1 GB Spansion Flash GPMC application note PowerVR

    Numonyx admux

    Abstract: JZ58F0101M0Y0GE SCSP M18 JZ58F0085M0Y0GF numonyx nand flash Intel nor flash 1024-Mbit PSRAM Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Cellular Memory M18 M18 SCSP Family with Synchronous PSRAM, x16 Shared Bus, 10x10 PoP Ballout Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash Die Density: 512Mbit-1Gbit — PSRAM Die Density: 128-256Mbit


    Original     		PDF 10x10 512Mbit-1Gbit 128-256Mbit 104-Ball 512Mb 133Mhz 133Mhz Numonyx admux JZ58F0101M0Y0GE SCSP M18 JZ58F0085M0Y0GF numonyx nand flash Intel nor flash 1024-Mbit PSRAM Numonyx StrataFlash M18

    numonyx 106 ball

    Abstract: numonyx 107-ball Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18 SCSP 768-Mbit L18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 128 or 256-Mbit — PSRAM Die Density: 32 or 64-Mbit — x16 Non-Mux or ADMux I/O Interface Option


    Original     		PDF 768-Mbit 256-Mbit 64-Mbit 11x13 numonyx 106 ball numonyx 107-ball Numonyx StrataFlash M18

    Numonyx admux

    Abstract: PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h
    Text: Numonyx Wireless Flash Memory W18 SCSP 128-Mbit W18 Family with Synchronous PSRAM Datasheet Product Features „ „ „ „ Device Architecture — Flash Die Density: 32, 64 or 128-Mbit — PSRAM Die Density: 16 or 32-Mbit — x16 Non-Mux or ADMux I/O Interface Option


    Original     		PDF 128-Mbit 128-Mbit 32-Mbit x32SH x16SB x16/x32 Numonyx admux PF38F2030W0YTQE numonyx 106 ball PSRAM TBA 931 PF38F2030 4400p0 x16C NOR Flash AAD die000000h

    NAND read disturb

    Abstract: SST79LF008 SST88VP1107 SST88VP1107-80-5C-LBSE 805W error correction code mlc PSRAM 256 FLash
    Text: All-in-OneMemory SST88VP1107 SST79LF008 Notebook System Controller with 8 Mbit LPC Firmware Flash Fact Sheet FEATURES: • All-in-OneMemory: Managed Memory Subsystem for Code and Data in a Single Package – Execute-in-place XIP Non-volatile area - NOR area


    Original     		PDF SST88VP1107 SST79LF008 16-bit MO-210, 80-lbga-LBS-10x13-0 80-Ball S71354 NAND read disturb SST88VP1107 SST88VP1107-80-5C-LBSE 805W error correction code mlc PSRAM 256 FLash

    K9LAG08UOM

    Abstract: K9LAG08UOM-2GB K9LAG08 Samsung MLC K9LAG08U Spansion S29GL512P samsung k9lag08uom K9LAG AN3998 Samsung 256 Gbit nand
    Text: Freescale Semiconductor Application Note Document Number: AN3998 Rev. 0, 03/2010 i.MX35 Memories SCL and MCL NAND Flash, SDRAM SDR, mDDR, DDR2, MMC/SDIO, SRAM, USB2.0 OTG, and ATA by Multimedia Applications Division Freescale Semiconductor, Inc. Austin, TX


    Original     		PDF AN3998 K9LAG08UOM K9LAG08UOM-2GB K9LAG08 Samsung MLC K9LAG08U Spansion S29GL512P samsung k9lag08uom K9LAG AN3998 Samsung 256 Gbit nand

    SANDISK NAND ID code

    Abstract: Sandisk TSOP MICRON NAND MLC DATASHEET intel nand flash transistor poly3 SANDISK NAND NAND FLASH BGA Datasheet Micron MLC Sandisk NAND Flash memory controller ecc nand flash gbit
    Text: P E R S P E C T I V E S O N P O R T A B L E D E S I G N Flash developments empower portables Flash chip sizes are shrinking as power goes down, yet the number of package options and IC technologies are exploding. T echnological innovation and a buyer’s market are combining to


    Original     		PDF

    synchronous nor flash

    Abstract: TN-45-23 TN-45-22 NOR Flash memory controller BCR01 TN4523 micron nor Flash
    Text: TN-45-23: Designing with CellularRAM on a NOR Bus Introduction Technical Note Designing with CellularRAM Memory on a NOR Flash Bus Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM, early-generation asynchronous, and page PSRAM. But they also offer a burst


    Original     		PDF TN-45-23: 09005aef823ea6b9 09005aef823ea6d8 TN4523 synchronous nor flash TN-45-23 TN-45-22 NOR Flash memory controller BCR01 micron nor Flash

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.2, Sep. 2010 K8S6815ET B D 64Mb D-die SLC NOR FLASH 7.5x5, 44FBGA, 8M Partition, x16, Muxed Burst, 8Banks 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S6815ET 44FBGA, 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh 040000h-047FFFh 038000h-03FFFFh

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov. 2010 K8A2815ET B E 128Mb E-die NOR FLASH 8M x16, Sync Burst, Page Mode, Multi Bank 1.7V to 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8A2815ET 128Mb 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh 040000h-047FFFh 038000h-03FFFFh

    Untitled

    Abstract: No abstract text available
    Text: TUSB6015 SLLS937 REVISION 1.4 SEPTEMBER 12, 2008 TUSB6015 USB 2.0 High Speed Peripheral Controller Data Sheet FEATURES DESCRIPTION ̇ The TUSB6015 is a USB 2.0 HS Peripheral Controller designed for seamless interface to an external Host processor through the NOR FLASH-like interface.


    Original     		PDF TUSB6015 SLLS937 TUSB6015 16-bit

    TC17xx

    Abstract: PQFP80 TC17X M58BW M58BW016 M58BW016D M58BW032 MPC5554 FLNORAUT0405 NOR FLASH
    Text: M58BW NOR Flash memories Automotive Flash memory solutions with burst mode Designed for automotive applications, STMicroelectronics’ M58BW016 16Mb and M58BW032 (32Mb) Flash memories, are built on proven 0.13µm technology. Featuring a wide operating-temperature range,


    Original     		PDF M58BW M58BW016 M58BW032 FLNORAUT0405 TC17xx PQFP80 TC17X M58BW016 M58BW016D M58BW032 MPC5554 FLNORAUT0405 NOR FLASH