T 2522 Search Results

Contextual Info: x > □ o AMP 4805 REV 31MAR2000 o X r~ > — I m o 00 o /4 - j - - b - - A - — + - —© -© —© o —© - —© - 8 F T T “T T T T “t T T T “t T T T “t T T T “t T T T “t T T T “t T T T “t T T T “t 00 -© - —© - T T “t A J / i L

2522N

Abstract: ifr 540
Contextual Info: S ig n e tìc s M e m o r ie s - S h if t Register C O N N E C T IO N D IA G R A M 2521-D u a l 128 Bit Static Shift Register 128 x 2 2522- Dual 132 Bit Static Shift Register (132 x 2) R E C IR C U L A T E IN, G E N E R A L D E S C R IP T IO N T h e 2521 128-bit and 2 5 2 2 132-bit recirculating static

jumo

Abstract: DIN EN 60 751 jumo tm PT100 JUMO PT10m
Contextual Info: ffeig: 0086-0411 6666050 f f J t : (0086-0411)6666053 6666051 6666052 E - m a i I : info@jumo-china. c om W e b s it e :h t t p :/ / w w w . j u m o - c h ina. co m (JUÑO) S5iis^90. 2522 Page 1/4 * ¡ g J t & I S : ~ 5 0 ~ + 2 6 0 °C * * íftmlítífeítt

2SD571

Abstract: 2SB605
Contextual Info: NEC v U = i > h 7 > y ^ ^ Silicon T ran sisto r 2SD571 NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier £fJfil2 Unit : mm o t —T 'i *T> y°ï$co Y ÿ 4 o 2 S B 605 ¿ n y 7 “ ') S > ? >) O / J^ T P tA ^ ^ <, 7.0 MAX. T é tto if t lÎŒ T - t o

2SC2522

Abstract: 15D transistor 2SC2522A R2213 2C2523 2sa1073 2SC25 10ICI
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D B 374=^2 DOlbSlfl 3 S F M I r - 22-13 E f t . r . S F : PRODUCT PROFILE " U H T i C U 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION T he 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN gen era l purpose, high pow er

HA7-2522

Abstract: HA7-2520/883 HA7-2522/883C
Contextual Info: HA-2520/883 HA-2522/883 H a r r is Uncom pensated, High Slew Rate Operational Amplifiers J a n u a ry 19 8 9 F e a tu re s D e s c rip tio n • T h is C i r c u it is P r o c e s s e d in A c c o r d a n c e t o M i l - S t d 8 8 3 a n d Is F u lly C o n f o r m a n t U n d e r t h e P r o v is io n s o f

2SK468

Abstract: IR044 T106
Contextual Info: NEC M m ^ T / Y T X O S F ie ld E f f e c t P o w e r T r a n s is t o r _ 2SK468 N - ^ ^ U ' ^ - M O S F E T n m m N-Channel MOS Field Effect Power Transistor Switching Industrial Use F E T T ', * A M / P A C K A G E DIMENSIONS W N ^ -v ^ ^ m p cV -M O S

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

Contextual Info: 14.50 ref. 13.10+0.25 12.50 + 0.10 \_ v_ \_ r R0.3 01 % o +1 l=D CM to cnzi CD NOTE: I'd A. 0201 22MR008 S_Q 1 4ZX 2522A X - 08 G D T -N 3=- :f+ T ro c\i 1 2.00 7.00 1 1.10 14.90 1 1. Selective plating ’S 1 (G1T) —0 5 u ” select gold in c o n ta c t/

2SK830

Abstract: je 243 26-JS STB-26 JE 170 B0952 JEX9 4h4 1 JE 33 TL08 015
Contextual Info: M N f t ^ l " / < 7 j i m - M O S O S F > 7 W -H ft ^ k ìlX f f iii h 'O , E E f f e c t P o w e r T r a n s is t o r T m 2SK830li, N f - t - T ' ^ - x y ^ x / y l - i ^ - M O S F E T T * F ie ld ¡t jJlìÈ X fl-M ¥ i i : ram -i DC-DC 3 m m ° V DSS=500 V, ID(DC)= ± 1 5 A

R096

Abstract: FN1L4Z
Contextual Info: . SEC r i Ï T 7 / \ f -y-57 • 5 / - H A C om pound Transistor FN 1L4Z i&ifc 1*1I t P N p n : 4# > 'J=l> Hwm it o/< 4 - to 2 .8 ± 0 .2 Ri =47 kQ O FA 1 L4 Z t 1.5 ? > 7 ° ') / > ? ') T l f f f l T ' ë 0.65*0 1 ~ t„ ( T a = 25 °C ) m »&

Contextual Info: MODEL NAME : 2522 REV. F R O N T VIEW Pin # A ssign m en t 1 LL n UL 3 S 4 LR 5 UR M a rk is a t re a r 5 Pin 2.54mm Pitch Female Connector PRESERVE PET » / UV ITO PET G LU E ITC GLASS O TES: : 2 .8 0 m m 3 .3 0 + 0 .30m m CON NECTOR AND PINOUT AS INDICATED

Contextual Info: Recommended P.C.B Loyout Componend Side 12.SO 2.00 difl Ep (Lp n CD NOTE: A. 0 2 0 1 22MR008 S_Q 20Z X (2522A X - 08 G D T -T) 1 1 1. Selective plating ’S 1 (G1T) —0 5 u ” select gold in c o n ta c t/ Min. 100u” tin in solder area ’S2(G2T) —Gold flash in contact a re a /

Transistor BC 227

Abstract: transistor bc 541 JT MARKING MSA 0154 fnil4m bc 107 transistor b0299 f b f 41 s p s 7 n 60 b TRANSISTOR BC 456 FA1L4M
Contextual Info: L I .7\ I IK V • NEC Æ C o m p o u n d T ra n s is to r m = * = r iv r x FAI L4M W at /ScNPN m m h^ 9 *S it ^ - iî O ^ M T x f f i t f C 4-1*1 j l L T ^ i - T o ( R ! = 47 k f ì , ; mm 2 . 8 + 0.2 R 2 = 47 k Q ) 0.65TS: 1.5 o F N 1L 4M t ^ >7 °')/ > 9 '} T'f-ÏJi] T" ë i T 0

j001 1003

Abstract: 74LS00 TTL Signetics 2650 VCU 2136 j001 1003 ic signetics hand book signetics 2650 8k ram ic j001 1003 strz 2026 pss 3056
Contextual Info: > l b l IC I I V » 2650 flllCROPROCEftOR CONTENTS I IN T R O D U C T IO N IN T R O D U C IN G T H E 26 50 F A M I L Y . 3 F E A T U R E S OF T H E 26 50 F A M IL Y 4 4 Microprocessor F e a tu re s .

sfp450h

Abstract: uPC1344GT upc1344 SFP-450H 4-40T SFE10.7MJ Toko 5Plc 5PLC-2525N
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ ¿ P C 1 3 4 4 G T E L E C T R O N IC T U N I N G A M R A D IO R E C E I V E R D E S C R IP T IO N The fiPC1344G T is a silicon monolithic integrated circuit designed for automotive AM radio receivers. The jiPC 1344G T

2SC2526

Abstract: FT1551 2SA1075 2SA1076 2SA1250 2SC2428 2SC2431 FT2551 2SC2530 2SC2530 to-3
Contextual Info: FUJITSU MICROELECTRONICS T? DE I 37Mci7ba D ü o n s s 5 3 7C Q .19 5 5 7^- <3 3 - Q /_ -_ 37 4 9 7 6 2 F u j i t s u m i c h o e l e c t r o n i c s 020000060101020100000048020202 F U J IT S U ! P1WEB Ï1 M S T 0 H LOW V O L T A G E HIGH SPEED POWER T R A N S IS T O R

3e tRANSISTOR

Abstract: TT3010 TRANSISTOR XL08 4-0992 XL08 2SK446 SK-446 JE 33 T108 JE 720 transistor
Contextual Info: NEC j m + T / v r x — Y = 7 > i > * 9 M O S Field E ffe c t P o w e r T r a n s is t o r A _ 2SK446 N f t ^ ^ < 7 y - ^ M O S F E T > jim m N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 4 6 ii, nmm/ p a c k a g e FETT,

L46R

Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
Contextual Info: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l

BIT 3251 pwm

Abstract: ba 4913 C2275 infineon c167 bare die Q67120-C2274 infineon c166 bare die transistor c2274 C166 C167 SAK-C167CS-4RC
Contextual Info: D a ta S he e t , V 2 .0 , Oc t. 2 0 0 4 C167CS-xC 1 6 - B i t S i n g l e - C h i p M i c ro c o n t r o ll e r C166 Family Step CA M i c r o c o n t r o l l e rs N e v e r s t o p t h i n k i n g . Edition 2004-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

74AS888

Abstract: ic vertical la 78141 IC LA 78141 schematic D2822 equivalent sn74as888 74ALS96 74AS SERIES 74LS222 KJE y3 transistor TMS9900
Contextual Info: Data Book 1986 Bipolar and CMOS LSI/VLSI * 5» Texas In s t r u m ents General Information LSI Devices Application Reports Mechanical Data LSI Logic Data Book Te x a s In s t r u m e n t s IM POR TAN T NOTICE Texas Instrum e nts Tl reserves the righ t to make changes in the

BA1A4M-T

Abstract: BA1A4M 3773A T108 ptc T108 t0429
Contextual Info: X — ^ • S/— h ÎH 'ê ' V -y > i> Com pound Transistor BAI A 4 M ÍS Íjt F * 3 Ü N P N x t : ^ + ' > T ; u ^ ' > y £|- ff¿l2 ] ¥ 4 5 1 i t o ^ ' i T : m m i X i £ Î Æ £ 1* 1 /1 L t i ' l t c ( R j = 1 0 ki2, R 2= 1 0 kQ) O B N 1A 4M ¿ 3 > f i ]

4H-01

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY 1 7 C 0 E L E C T R O N IC S P U B L IC A T IO N R IG H T S 2 -, - REVISIONS A, RESERVED. C O R P O R A T IO N . D E S C R IP T IO N A - 2 4 . 2 8 MAX[.9 5 6 ] REV PER

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?