T 358 N 1600 Search Results

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 358 N ø23 C A ø3,5 x 2 deep on both sides ø23 HK G plug 2,8 x 0,8 VWK Aug. T 358 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Vorwärts- und RückwärtsSpitzensperrspannung

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 358 N ø23 C A ø3,5 x 2 deep on both sides ø23 HK G plug 2,8 x 0,8 VWK Aug. T 358 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Vorwärts- und RückwärtsSpitzensperrspannung

T 358 N 1600

Abstract: 1100 A 4600
Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 358 N ø23 C A ø3,5 x 2 deep on both sides ø23 HK G plug 2,8 x 0,8 VWK Aug. T 358 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Vorwärts- und RückwärtsSpitzensperrspannung

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information T 358 N ø23 C A ø3,5 x 2 deep on both sides ø23 HK G plug 2,8 x 0,8 VWK Aug. T 358 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties Maximum rated values Periodische Vorwärts- und RückwärtsSpitzensperrspannung

k7815

Abstract: K7630
Contextual Info: These units can be manufactured and tested to MIL-T-27/358. Contact factory for price and delivery information and appropriate parts numbers MIL-T-271358-01 thru MIL-T-271358-123 . PICO PA ST N UM BER SPECIFICATIONS • MIL.T-27:.

Semikron sk 51

Abstract: nr. 9181 semikron skiip 83 SKP24 SKiiP2 skiip6 skiip 84 p1003 SK 618
Contextual Info: s e MIKRDN in n o v a tio n + service integrateci intelligent power subsystems Easy paralleling • 2, 3 o r 4 2 -p a c k halfbridge => m a x .1600 A rms o u tp u t current • hom og en ou s current d istrib u tio n Modular power section • 2 -p a c k (halfbridge)

2T908A

Abstract: 2T602 2T907A KT604 1HT251 1T813 2t903 KT920A PO6 115.05 KT117
Contextual Info: nojiyriPOBOflHHKOBblE nPHBOPbl: TpaH3HCTOpbI CnpaBOHHHK rioa oGmea peaaKUHen H. H. TOPIOHOBA EB MOCKBA 3HEPrOATOMH3AAT 1983 BEK 32.852 n 53 y ^ K . 621.282.3 035 P e n e H 3 e H T b i : E. 14. KpbiJioB, B. B. I1aB;ioB AB T o p b i : B. Jl. ApoHOB, A. B. E bkikob, A. A. 3aiineB,

2kva ups circuit diagram

Contextual Info: vacon nxp/c ac drives user manual vacon • 1 TABLE OF CONTENTS Document ID: DPD00890B Revision release date: 9.10.2014 1. SAFETY .4 1.1 1.2 1.3

Contextual Info: E U P EC SEE D • 34032=17 0 D D Ü 7 SS TÜ3 « U P E C T 3 5 8 N 7 lypenreihe/iype ränge T358N 400 * 600 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VDRM, VrrM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom

TT308

Abstract: eupec dd 31 n 12 l T235N
Contextual Info: tUHEC T235N SEE D • 34032^7 000073S IIS ■ U P E C ^ 2 3 - /9 Typenrelhe/iype range_ T235N_ 1600_ 1800_ Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Vdrm >Vrrm Periodische Vorwärts-und

SF500EX26

Abstract: SF500U26 thyristor tt 250 BA 250G SF500U
Contextual Info: THYRISTOR S F 5 SILICON DIFFUSED TYPE U , Y , E X 2 6 H IGH P OW E R C O NT R OL A PP LI C A T I O N S . Unit in mm FEATURES : . Repetitive Peak Off-State Voltage : VpR^-. Repetitive Peak Reverse Voltage : Vrrm | •¿~0b.2±O.'¿ -1600 - 2500V . Average On-State Current

Contextual Info: Phase control thyristors Type V drm It r m s m It s m /¡2dt It a v m ^ c V TO rT (di/dt)cr tq (dv/dt)cr typ D IN V gt Ig t R t h JC tvj = 25 °C tvj = 180 °e l IE C 747-6 25 “ C sinus V/ns V mA °c/w 1.4 150 0.3 tvj max Outline V rrm V d sm = V q rm V r sm

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

cr 6850 t

Abstract: T 698 DIN 1445 l 0380 T188F
Contextual Info: Phase Control Thyristors Type VDRM VRRM V ITRMSM ITSM A kA 600.1800* ∫i²dt A²s 10ms, 10ms, tvj max tvj max *10³ VDSM = VDRM VRSM=VRRM +100V T 86 N Netz-Thyristoren 200 2 20 ITAVM/tc V TO A/°C V 180° el sin tvj = tvj 86/85 1,00 max rT (di/dt)cr tq

IC 7476

Contextual Info: EUPFC blE D • 3 4 G 3 2 T 7 0 0 0 1 3 2 4 bT3 * U P E C Phase control thyristors Itsm / ¡ 2dt Itavm/ I c rT di/dt cr (d v /d t)cr V gt I gt RthJC t»¡ = i I trm sm " V drm ê Type tv¡ max DIN typ. IEC 747-6 DIN IEC 747-6 tvj = 25 °C tvj = 25 “C 180 °el

T 358 N 1600

Abstract: t 250 n 1200 245000 IC 7476 T31N
Contextual Info: EUPFC Phase control thyristors V d sm V rsm It r m sm V drm = Vrrm + 100 V V A Itsm /¡2dt Itavm/Ic 10 ms, 10 ms, tvj max tvj max 180 °el sin. A A2s A/°C di/dt cr (dv/dt)cr Vgt Ig t RthJC t»i = tvj max DIN typ. IEC 747-6 DIN IEC 747-6 tvj = 25 °C tvj =

e20d

Abstract: T510S
Contextual Info: Fast thyristors Type It r m s m V drm V f i2dt N W m^ c V T0 It (di/dt)cr (dv/dt)cr V st I gt R th J C = Vrrm + 100 V v rsm DIN DIN I EC 747-6 tvj = tvj = 25 °C 25 °C 180 “el sinus V mA °C/W °c A V 200 400 50 2 500 500 1000 200 0,108 140 9 10 m s, 180 °el

T-290 eupec

Abstract: el 509 T188F T510S 3403SC17 00G132
Contextual Info: Type V drm It r m s m Its m 3 4 0 3 S C17 00G132Ö blE D EUPEC Fast thyristors BMT M U P E C / i 2d t Itavm ^ c V TO rT ( d i/d t) cr ( d v /d t)cr V gt Iqt RfhJC DIN IEC 747-6 tyj = 25 °C tVj = 25 °C 180 ”el sinus V mA °C/W °c = 50 2 = 500 = 500 =1000

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

T188F

Abstract: T510S T-290 eupec
Contextual Info: EUPEC F as t thyristors Type V drm V It r m s m It s m / i2dt 10 ms, tj max kA A2s D • 3 4 Q 3 S t17 D0G13SÖ di/dt cr (dv/dt)cr tv j max DIN IEC 747-6 Itavm/Ic V(TO) rT 10 m s, 1 80 "Bl tv | = t,j = tv , max s in . t ’.'i max E4T ■ U P E C V gt Iq t

T 358 N 1600

Abstract: T358N
Contextual Info: E U P E C S E E D • 3 4 0 3 2 = 1 7 0 D D Ü 7 S S T Ü 3 « U P E C T 3 5 8 N 7 lypenreihe/iype ränge T358N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte VDRM, VrrM Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Effektiver Durchlaßstrom

T 698

Contextual Info: -as" :hyris:ors "ype V drm Itrm sm Its m / ¡ 2dt ^TAVM^C V TO rT (di/dt)cr *q (dv/dt)cr Vqt Igt RthJC DIN IEC 747-6 tvj = 25 “C tvj = 25 °C 180 °el sinus V mA °C/W °c tvj max Outline Vrrm 10 ms, 10 ms, tvj max tvj max 180 °Bl sin. t,j = tvj ma, tvj =

diode 931 p 7

Abstract: A198S
Contextual Info: 4 ^ • EUPEC Fast asymmetric thyristors Type V drm V dsm / ¡ 2dt V rrm = VDRM V blE D ■ 34035^7 □□□1330 TT7 ■ UPEC di/dt cr V(TO) V) (dv/dt)cr O utline ( V r r m ( c j) tp = 10 ms, 10 ms, 1 |XS tv i max tv , max sin. V kA A2s A/°C tvj = »vi =

D1201S

Abstract: T 358 N 1600 ilr 645
Contextual Info: Fast rectifier diodes Type Vrrm V rsm If r m s m = V R RM Ifsm /¡2dt If a v m ^ c V TO rT V Ir m Vr f 100 V1) A < 0 ,5 R |h J C t. max ty| = tv; ma* 180 °el •F = if-AVM d if /d t = 5 0 A ' ms sin m £2 A °c/w °c 10 m s, 10 ms, tv, = tv, ma« tv, ,