T 63 N 1200 Search Results

2n2907 TO-92

Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337
Contextual Info: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure

General electric SCR C147M

Abstract: C147N C147pb SCR C147PB GE C147P GE C150 C147 C52U C147D GE C147S
Contextual Info: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}

General Electric SCR C52T

Abstract: C52 SCR General electric SCR c50 General electric SCR C52 c52m 50 20 500 C52T scr c52u scr C50 C52 "SCR" C52E
Contextual Info: 109 PHASE CO N T R O L SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2 N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S | V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1}

40C10B

Abstract: 40C40B 40C10 40C20B 40C100B 40C120B 40C60B 40C80B
Contextual Info: COOR S C O M P O N E N T S INC jl^J>Ej5M3DD0b00[][]lS3 1 2430006 COORS COMPONENTS INC Silicon Controlled Rectifiers 63 Amps RMS; VDRM and - : -• ■ ■ ■ Series 40C up to 1200 Volts 820 00153 0 High dv/dt- 200 V/^seo. 1000 Amperes surge current capability

XMT1300-1

Abstract: PLM 20-C 300155
Contextual Info: BT &» T E C H N O L O G IE S M S E D B 11 Û S Q 63 000003 b T• B T D T tz r v c \ 5 .w A % British Telocom & DuPont ! v is i •» \ >k' ' ■* s i T E C H N O L O G I E S X M T 1 3 - 1 5 5 FIBER OPTIC LOGIC TO LIGHT TRANSMITTER Features Applications

EL5191

Abstract: EL5192 EL5193 EL5292 EL5292A EL5293 EL5392 EL5393 L526
Contextual Info: ESIG WD E N FOR 63 DED 0, EL52 N E OMM L526 R EC SEE E T Data Sheet O N NS Dual 600MHz Current Feedback Amplifier with Enable The EL5292 and EL5292A represent dual current feedback amplifiers with a very high bandwidth of 600MHz. This makes these amplifiers ideal for today’s high speed video

S1034

Abstract: 40RIF20W 40RIF40W 40RIF60W 50RIF10W 50RIF20W 50RIF60W VD08
Contextual Info: ü s INTERNATIONAL RECTIFIER 4855452 0004050 D Ë f|4 a s s 4 s a 55C 0 4 8 5 8 I N T E R N A T I O N A L R E C T I F TER D Data Sheet No. PD-3.178 IÖR INTERNATIONAL RECTIFIER r ^ s - / 5 4 0 RIFj 5 0 R I F S E R I E S 63 A, BOA RMS Medium Power Fast Turn-off Thyristors

C150 SCR

Abstract: General Electric C152p General electric SCR C150 C152P C152 C45E 3tf 46 TRANSISTOR D1651 C147 C147U
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L SP E C IFIC A TIO N S |V O L T A G E R A N G E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

Contextual Info: 1N3016B thru 1N3051B 5 . V A I ASA. C i SC O V rSD A L E , A Z F o r m ure info rm a tio n cali: (602 941-63Ö0 FEATURES • Z E N E R V O LT A G E R AN G E: 6.8V TO 200V • 1N3016B TH R O U G H 1N3051B H A V E JA N . JA N T X , and JA N T X V Q U A LIFIC A T IO N S

C45N equivalent

Abstract: general electric c350 C350 cdi dc with scr for 15 ampere, 12 volt C150P C147D TRANSISTOR D1651 General electric SCR C147M C147 C45U
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 C 60, 62 2N 1909-16 2 N 1792-98 JEOEC C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

CO-231

Abstract: CO28* crystal co-401 CO28 CO-286VW CO-447 C0-231V CO-441 CO283vw 446V
Contextual Info: VE CTRON L A B O R A T O R I E S INC 47E D T 4 4 7 32 0 00007 4fl 737 • VEL -T-Sb-lS* VECTRO N U r V l l c VottageContnolled Crystal Oscillators forPhaseLockingApplications See pages 63-66 for linear and wide deviation VCXOs : FEATURES < • Deviation of ± 30 ppm to ft 200 ppm

c45 scr

Abstract: scr C50 C46U C46C C46M TRANSISTOR D1651 2N1909 C147 C147U C350
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C45, 46 G E TYPE C147 C 50, 52 C l 50, 152 2N 1909-16 2 N 1792-98 JEOEC C 60, 62 C350 2N 2023-30 E L E C T R IC A L S P E C IFIC A TIO N S |V O L T A G E RA NG E 2b 1200 II 25-1200 25 120Ü 500-1300 25 500 1} 500 -13 00

gd 40001

Abstract: OP-497
Contextual Info: - 63 - i& t y - t -y M i f f , OP-497 •ISA tsty-by h U £ •fif i ±20 ±20 ±20 40 40 40 » I f i ä S -55—+125 -40^*85 -40—*85 iï n » / / / iK Ä S '* m A fim .« .( 7 ‘•• g : .«■ E out a (T ne (1" n i- .« c ñ ] -tue (P * 7 1 7 Í- X

Contextual Info: SEM IK R CN 15E 0 § fll3bb?l 0001521 1 | ' INC s e MIKRD n V rsm V rrm V drm iV-dt i/cr Itrms maximum values for continuous operation 63 A | 78 A SKT40 SKT 50 UNF Itav (sin. 180;" "case = . . . °C) V / jis 40 A (80 °C) 400 200 S K T 40/04 C t 700 600

GE C158N

Abstract: C156A GE C156B C157C c157a GT 1081 C154A GE C154B C158PB C354B
Contextual Info: I N V E R T E R SCR's 109 63 TO 270 AM PERES C 48/C148 GE TYPE ALL D IF F U S E D C O N S T R U C T IO N C 49/C149 C 15 4 , 156 C 155, 157 C 158, 159 ALL A M PLIFY IN G A M PLIFYIN G A M P L IF Y IN G D IF F U S E D GATE GATE GA TE C 16 4 , 165 C 354, 355

M 8906

Abstract: 7815R ic 7815 ic la 7698 ic 7698 ML-8906 ML-7698 ML-7211 8906 voltage regulator 8906 ic
Contextual Info: The M o c h le t t L a b o r a t o r ie s , In c . * 1 0 63 H ope S tre e t ISSU ED 7 7 3 Stamford, Conn. 06907 • Tel. 203-348-7511 • TWX 203-327-2496 UHF Planar Triodes C W , Plate or G rid Pulsed Phormat Cathode High Cathode Current C apability Extended G rid -A n o d e Insulator

Contextual Info: P r e l im in a r y P r o d u c t S p e c if ic a t io n Z89195/ Z89196 R o m less V o ic e P r o c e s s in g C o n t r o l l e r s FEATURES Device ROM (KB) RAM* (Bytes) I/O Lines Voltage Range Z89195 32 256 63 4.5V to 5.5V Z89196 - 256 47 4.5V to 5.5V

C157C

Abstract: C358P C156A c157a C154 C154A C158 C164 C354 C358
Contextual Info: I N V E R T E R SCR's 109 63 TO 270 AM PERES C48/C148 GE TYPE A LL D IF F U S E D C O N S T R U C T IO N C49/C149 C 1 5 4 , 1 56 C 1 5 5 , 157 C 1 5 8 , 159 A LL A M P L IF Y IN G A M P L IF Y IN G A M P L I F Y I N G D IF F U S E D GATE GATE GATE C 1 6 4 , 165

C45E

Abstract: C147U C45U C45PB C150PA scr stud 280 C150PB C52T N2030 C46D
Contextual Info: 109 PHASE CONTROL SCR's 63 TO 190 AMPERES C 45, 46 GE TYPE C147 C 5 0 , 52 C l 50, 152 2N1909-16 2N 1792-98 JE O E C C350 C 6 0 , 62 2N 2023-30 E L E C T R IC A L S P E C IFIC A T IO N S | V O LTA G E RAN GE 2b 1200 II 25-1200 2 5 120Ü 500-1300 25 500 1}

3CX100A5

Abstract: general electric
Contextual Info: 3CX100A5 ELECTRONICS 3CX100A5 Page 1 PLANAR TRIODE 3-63 DESCRIPTION AND RATING^ FO R G R O U N D E D -G R ID OSCILLATOR, A M P L IF IE R , A N D F R E Q U E N C Y M U L T IP L IE R S E R V IC E M etal and Ceramic P ulse R ated H igh Transconductance Shock R esistant

1N series ZENER DIODE 5 to 10 volt watt

Abstract: 3993A diode 1N series ZENER DIODE 18 volt watt 1N 043 diode zener diodes 1N series
Contextual Info: 1 N 2 9 7 0 thru 1N 3015B and 1N 3 9 9 3 thru 1N 4000A Microsemi Corp. f diode experts SCOTTSDALE, AZ SANTA A N A . C A F o r m o r e i n f o r m a t i o n c a ll: 6 0 2 94 1-63 00 FEATURES • ZENER VOLTAGE 3.9 to 200V . VOLTAGE TOLERANCES; ± 5 % , ± 1 0 % and ± 2 0 % (See Note 1)

C354

Abstract: C354B C157C C154 C154A C158 C164 C358 C49A C164C
Contextual Info: INVERTER SCR's 109 63 TO 270 A M P E R E S C 48/C148 GE TYPE ALL D IF F U S E D C O N S T R U C T IO N C 49/C149 C 15 4 , 156 C 155, 157 C 158, 159 ALL A M PLIFY IN G A M PLIFYIN G A M P L IF Y IN G D IF F U S E D GATE GATE GA TE C 16 4 , 165 C 354, 355 C358

Contextual Info: SUNCON o > Q ?• g i. 3 m a 3 * n • 10 5 t!, 2,000 to 5 ,0 0 0 hrs. • Do not clean the capacitors using solvent. ■ Specifications Items Condition Rated volta ge V) Surge vo lta g e (V) Specifications 6 .3 10 16 25 35 50 8 .0 13 20 32 44 63 0 .1 2

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.