T EP 25 Search Results

TPS73130-EP

Abstract: TPS73115-EP TPS73150-EP TPS73101-EP TPS731125-EP TPS73125-EP TPS73132-EP TPS73118-EP TPS73133-EP
Contextual Info: TPS73101-EP, TPS73115-EP TPS731125-EP, TPS73118-EP, TPS73125-EP, TPS73130-EP TPS73132-EP, TPS73133-EP, TPS73150-EP w w w .t i.c om SGLS347A – JUNE 2006 – REVISED SEPTEMBER 2007 CAP-FREE NMOS 150 mA LOW DROPOUT REGULATOR WITH REVERSE CURRENT PROTECTION

TPS1110

Contextual Info: TPS2816-EP, TPS2817-EP, TPS2818-EP TPS2819-EP, TPS2828-EP, TPS2829-EP w w w .t i.c om SGDS039 – FEBRUARY 2008 SINGLE-CHANNEL HIGH-SPEED MOSFET DRIVER FEATURES 1 • • • • • • • • • • • • • 1 Controlled Baseline – One Assembly Site

ADR434-EP

Abstract: ADR434T-EP ADR431 ADR431TRZ ADR435TR
Contextual Info: Low Noise XFET Voltage References with Current Sink and Source Capability ADR431-EP/ADR434-EP/ADR435-EP PIN CONFIGURATION Low noise 0.1 Hz to 10.0 Hz : 3.5 V p-p @ 2.5 VOUT (ADR431-EP) No external capacitor required Low temperature coefficient T Grade: 3 ppm/°C maximum (ADR434-EP/ADR435-EP)

Contextual Info: BiMOS II 8-BIT SERIAL-INPUT, LATCHED DRIVERS UCN5841A - UCN5843A Dwg. No. A-12,659 ABSOLUTE MAXIMUM RATINGS a t 25°C Free-A ir T em p eratu re Output Voltage, VCE UCN5841 A/EP/LW . . 50 V (UCN5842A/EP/LW) . .80 V (UCN5843A/EP/LW) . . . . . 100 V

EE CORES

Abstract: FERRITE core ee TRANSFORMER ferrite core selection transformers 325 339 ep core _type transformer EE core EE FERRITE transformer EI 96 magnetic core EE 25 transformer EE ferrite cores
Contextual Info: EP cores,EP kerne,ferrite EP core,EP-core,EMC Suppression Cores,gapped toroid core China Professional Ferrite Core Supplier MnZn High Permeability Material p Quick Browser ● EE CORES ● EI CORES ● EP CORES ● FT&ET CORES ● UF&UI CORES ● T CORES ●

EPO13

Abstract: EPCOS 800 274 0 Epcos EP7 SMD Transformer Epcos EP7 SMD power Transformer EPX10
Contextual Info: EP, EPX, EPO Cores General Information EP, EPX, EPO cores EP, EPX, EPO cores are typically used for transformer applications. Their cubic shape provides an excellent volume ratio to total space used and permits high PCB packing densities. The compact design and the broadband materials used N 26, N 30, T 38, T 42, T 57 and T 65 ensure low

electroluminescent display

Abstract: UCN5853A UCN-5853A UCN-5853EP UCN-5854A UCN-5854EP
Contextual Info: UCN-5853A/EP AND UCN-5854A/EP BiMOS II 32-CHANNEL, SERIAL-INPUT, LATCHED DRIVERS U CN -5853A /EP A N D U CN -5854A/EP BiMOS II 3 2 -C H A N N E L, SER IA L-IN PU T, LATCHED DRIVERS —Thin-Film Electrolum inescent D isplay Column D rivers T h e lo g ic s e c tio n s c o n s is t o f a 3 2 -b it s h ift re g ­

Contextual Info: EP Series_ RFI Power Line Filters For Switching Power Supply Noise Suppression t o DE UL Recognized, CSA C ertified, VDE Approved, and SEV Approved EP Series Specifications The EP series of RFI filters has been developed to reduce conducted noise to acceptable limits for

Contextual Info: TLV3491A-EP, TLV3492A-EP, TLV3494A-EP w w w .t i.c om SGDS035 – DECEMBER 2007 1.8 V, NANOPOWER, PUSH/PULL OUTPUT COMPARATORS FEATURES APPLICATIONS • • • • • • • 1 Very Low Supply Current: 0.8 µA Typical Input Common Mode Range 200 mV Beyond

Contextual Info: TPS79718-EP, TPS79730-EP, TPS79733-EP w w w .t i.c om SGLS348A – AUGUST 2006 – REVISED OCTOBER 2007 ULTRA LOW-POWER, 10 mA, LDO LINEAR REGULATORS WITH POWER GOOD OUTPUT FEATURES APPLICATIONS • • 1 • • • • • • • • • • • 1 Controlled Baseline

Contextual Info: SN65HVD10-EP, SN65HVD11-EP SN65HVD12-EP w w w .t i.c om SGLS278E – DECEMBER 2004 – REVISED SEPTEMBER 2007 3.3 V RS-485 TRANSCEIVERS FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • • • • • • • • 1

electroluminescent display

Abstract: UCN-5852A UCN-5852EP 5851 A13041 UCN5851A
Contextual Info: UCN-5851A/EP AND UCN-5852A/EP BiMOS II 32-CHANNEL, SERIAL-INPUT DRIVERS U CN -5851A /EP A N D U CN -5852A /EP BiM OS II 3 2 -C H A N N E L, SER IA L-IN P U T DRIVERS — Th in-F ilm Electrolum inescent D is p la y R o w D riv e rs FEATURES • • • •

Contextual Info: CONDENSATEURS ELECTROLYTIQUES TRES BASSE IMPEDANCE EP 45 EP 45 T Dielectrique: Electrolyte liquide Technologie: Tube aluminium, protection par gaine isolante sorties par bornes a vis, fixation par collier ou teton filete Applications Alimentations a decoupage, convertisseurs, onduleurs

YTS2222A

Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
Contextual Info: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60

T10X5X5

Abstract: EER54 EE55B
Contextual Info: Magnetic Material Ind . Co., LTD Introduction & Characteristics of MnZn Ferrite cores Page1-12 Mnzn Power Material EER,ETD,RM,UYF,EP,EPC,UY,EFD,LP Page13-18 PQ,URS,UF&UI,ED,T,EI,EE Page19-26 Mnzn High Permeability Material EE,EI,EP,FT&ET,UF&UI,T,RM, Common mode choke cores applied in EMS,ET

Contextual Info: ISDN S-Interface Applications Transformers - EP Style Designed to meet pulse waveform template of CCITT I.430 when using proper chip pair. Electrical Specifications 1,2,3 at 25OC Part Number T-13700 T-13701 T-13702 T-13703 T-13704 T-13705 T-13706 T-13707 1

T-13700

Abstract: T-13706 T-13707 13700 isdn-ep eP13 bobbin T-13702 T-13703 EP10 T-13701
Contextual Info: ISDN S-Interface Applications Transformers - EP Style Designed to meet pulse waveform template of CCITT I.430 when using proper chip pair. Electrical Specifications 1,2,3 at 25OC Part Number T-13700 T-13701 T-13702 T-13703 T-13704 T-13705 T-13706 T-13707 1

SB-116

Abstract: 2sb1163 2SB1181F5 2SB1182F5 2sb174 2SB1157 2SB1158 2SB1159 2SB1160 2SB1161
Contextual Info: - 78 - Ta=25eC, *Ep{ÎTc=25'C m g ffl & m Vcbo VcEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) ICBO ViuaA/ ilik) »^B (¥) m \m i n / w te & hF E y (Ta=25eO) u / î,- VIIIOA/ (V) [*EP(itypffl] /n o v i W W le (A) W I b (A) 2SB1Í5? tö T PA -100 -100 -5 3 60 -50

FT5754M

Abstract: FT5753M FT5769M FT5758ML FT5758M FT5763M ft5748m FT5764M FT5760M FT5761M
Contextual Info: - 312 - m % m Ta=25T , *EP(äTc=25<C ) tt m a & '•CEO (V) FT5747M HV SW/HF A (V) ici D O (A) Pc (W) Pc* (W) iCBO^ (max) lu A) V'CB .faE (max) (min) (V) «# tt Vc e (V) (Ta=25T;) [*EP(ätyp{Ü] . / (max) (V) Ic /’ Ie (A) \ t. / \ (V) le (A) -250 -250

AMBA AXI4 verilog code

Abstract: AMBA AXI specifications AMBA AXI4 pci to pci bridge verilog code Xilinx DS820 system verilog pcie microblaze state machine diagram for axi bridge Xilinx Virtex6 Design Kit 0X138
Contextual Info: LogiCORE IP AXI EP Bridge for PCI Express v1.01.a DS820 October 19, 2011 Product Specification Introduction t LogiCORE IP Facts Table The Advanced eXtensible Interface (AXI) Endpoint (EP) Bridge for PCI Express is an interface between the AXI4 bus and PCI Express. Definitions and

Contextual Info: o o > o o> EP-cap SUNCON § =• 3 *0 Q . B> 3 c 2. 5' as| u> 2 §8 3 = O 3 ^ 5 .0 • 105t!, 2,000 to 5,000hrs. • Solvent proof within 2 minutes B asic Construction C h a r a c t e r is t ic s ■ Specifications Advantages of EP-cap Item s Soldering Condition

L495d

Abstract: scans-048 ET-1000 DSAGER00040
Contextual Info: LU S L 43 L495D L497D Type Vf 4 4 4 4 0,15 0,15 2 2 B~ B~ ET EP EP EP Verw. 150 200 550 550 Un - - - t/g, - - - ugi - - - u g3 Ug2 - - If H e iz a rt 200 200 200 -2 0 — 19 -4 0 -3 0 ° £ 11 12 45 45 la - - - 4 ,6 hz 1 .6 1 ,3 3,2 S - - - - D 3 45 33 30

Contextual Info: NO TICE: EP # EP—080543 ALL INFORMATION DISCLOSED B Y THIS DO C U M EN T IS CO NSIDERED C O N F ID E N T IA L AND PR O P R IETAR Y B Y AIR B O R N . ALL DESIGN, M A N U F A C T U R E , USE, REPRO DUCTIO N , AND SALE RIGHTS ARE RESERVED B Y AIR B O R N .

75138

Contextual Info: ö ^1.17 a 4 aGössis b « T im T TEXAS I NSTR ' S 2 -3»i SN55138, SN75138 QUADRUPLE BUS TRANSCEIVERS MQE D CLIN/INTFC D 1 6 6 3 , S EP TEM B ER 1 9 7 3 - R E V IS E D S EP TEM B ER 198 6 SN 55138 . . . J PACKAGE SN 75138 . . . D. J . OR N PACKAGE TOP VIEW)