T-75 HIGH VOLTAGE DIODE FIGURE Search Results

Contextual Info: Application Notes APPLICATION NOTES FOR PIN DIODES The PIN diode structure consists of an Intrinsic "I" region sandwiched between heavily doped P+ and N+ regions as shown in Figure 1. The Intrinsic region is a very lightly doped, high resistivity material which controls the fun­

comb generator

Contextual Info: A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips Features • High Efficiency ■ High Power Handling ■ High Reliability Description than the period of the output frequency. Figures 2 and 3 are graphs which can be used to easily determine the

L6388

Abstract: L6388D STL6388 L6388D013TR
Contextual Info: L6388 HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER 1 FEATURES Figure 1. Package • HIGH VOLTAGE RAIL UP TO 600 V ■ dV/dt IMMUNITY ± 50 V/nsec IN FULL TEMPERATURE RANGE ■ DRIVER CURRENT CAPABILITY:400 mA SOURCE,650 mA SINK ■ SWITCHING TIMES 70/40 nsec RISE/FALL

IPW50R045CP

Abstract: JESD22
Contextual Info: IPW50R045CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS,on in TO247 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS on ,max 0.045 Ω 150 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated PG-TO247 • High peak current capability

RB715W

Abstract: SC-75A
Contextual Info: RB715W Diodes Shottky barrier diode RB715W zExternal dimensions Unit : mm zLead size figure (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 0.15±0.05 1.3 zFeatures 1) Ultra small mold type. (EMD3) 2) Low VF 3) High reliability. 0.7 1.6±0.2 0.7 0.7 (3)

Contextual Info: Data Sheet AEC-Q101 Qualified Shottky barrier diode RB715WFH Land size figure Unit : mm Dimensions (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6± 0.2 0.15±0.05

ISO7637

Abstract: VNQ830PEP-E VNQ830PEPTR-E PowerSSO-24
Contextual Info: VNQ830PEP-E QUAD CHANNEL HIGH SIDE DRIVER Table 1. General Features Figure 1. Package TYPE RDS on IOUT VCC VNQ830PEP-E 60 mΩ (*) 14 A (*) 36 V (*) Per channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS • ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION

RB481Y-90

Abstract: SC-75A
Contextual Info: RB481Y-90 Diodes Schottky barrier diode RB481Y-90 zApplications Low current rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.5 0.22±0.05 (3) 1.2±0.1 (4) 1.55 0.13±0.05 (1) zConstruction Silicon epitaxial planar 1.6±0.1 1.6±0.05 zFeatures

Contextual Info: Data Sheet Schottky Barrier Diode RB481Y-90 Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) 0.5 0.22±0.05 (3) 1.2±0.1 (4) 1.55 0.13±0.05 Construction Silicon epitaxial planar (1) 0.5 1.6±0.1 1.6±0.05

Contextual Info: Data Sheet Shottky barrier diode RB715W Dimensions Unit : mm Land size figure (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6± 0.2 0.15±0.05 (3) 0～0.1 0.6

RB480Y

Abstract: RB480Y-90 SC-75A
Contextual Info: RB480Y-90 Diodes Schottky barrier diode RB480Y-90 zApplications Low current rectification zLand size figure Unit : mm zExternal dimensions (Unit : mm) 0.45 0.5 1.6±0.1 0.22±0.05 (3) 1.2±0.1 (4) zConstruction Silicon epitaxial planar 1.55 0.13±0.05 (1)

Contextual Info: Data Sheet Shottky barrier diode RB558W Dimensions Unit : mm Land size figure (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6±0.2 0.15± 0.05 1.3 Applications

Contextual Info: Data Sheet AEC-Q101 Qualified Schottky Barrier Diode RB557WFH Land size figure Unit : mm Dimensions (Unit : mm) 0.5 0.5 0.7 1.6± 0.2 0.3±0.1 0.05 Features 1)Ultra small mold type. (EMD3) 2)Low VF 3)High reliability 0.15±0.05 0.7 0.1Min

Contextual Info: Data Sheet AEC-Q101 Qualified Shottky barrier diode RB558WFH Land size figure Unit : mm Dimensions (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6±0.2 0.15± 0.05

RB481Y-90

Abstract: SC-75A
Contextual Info: RB481Y-90 Diodes Schottky barrier diode RB481Y-90 zLand size figure Unit : mm zExternal dimensions (Unit : mm) 0.6 0.7 0.22±0.05 0.13±0.05 0.05 (3) 1.2±0.1 (4) (1) zConstruction Silicon epitaxial planar 1.6±0.1 zFeatures 1) Ultra small mold type. (EMD4)

Contextual Info: Data Sheet Schottky Barrier Diode RB557W Dimensions Unit : mm Land size figure (Unit : mm) 0.5 0.5 0.7 1.6± 0.2 0.3±0.1 0.05 Features 1)Ultra small mold type. (EMD3) 2)Low VF 3)High reliability 0.15±0.05 0.7 0.1Min 0.6 0.6 EMD3 0.55±0.1

RB557W

Abstract: SC-75A
Contextual Info: RB557W Diodes Schottky barrier diode RB557W zApplications General rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.5 0.5 0.3±0.1 0.05 zFeatures 1) Ultra small mold type. (EMD3) 2) Low VF 3) High reliability 0.7 1.6±0.2 0.15±0.05

Contextual Info: VNQ830PEP-E QUAD CHANNEL HIGH SIDE DRIVER TARGET SPECIFICATION Table 1. General Features Figure 1. Package TYPE RDS on IOUT VCC VNQ830PEP-E 60 mΩ (*) 14 A (*) 36 V (*) Per channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS • ON STATE OPEN LOAD DETECTION

gw20nc60vd

Abstract: GW20NC60 GW20N schematic diagram UPS IGBT gw20nc60v GW20NC
Contextual Info: STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGW20NC60VD 600 V < 2.5 V 30 A • ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY

Contextual Info: VNQ810PEP-E QUAD CHANNEL HIGH SIDE DRIVER PRELIMINARY DATA Table 1. General Features Figure 1. Package TYPE VCC RDS on Iout VNQ810PEP-E 36V 160mΩ 5A(∗) (*) Per channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS • ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION

gw20nc60vd

Abstract: STGW20NC60VD GW20NC60 gw20nc60v GW20 ic MARKING QG
Contextual Info: STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGW20NC60VD 600 V < 2.5 V 30 A • ■ ■ ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY

ISO7637

Abstract: VNQ810PEP-E VNQ810PEPTR-E PowerSSO-24
Contextual Info: VNQ810PEP-E QUAD CHANNEL HIGH SIDE DRIVER Table 1. General Features Figure 1. Package TYPE VCC RDS on Iout VNQ810PEP-E 36V 160mΩ 5A(∗) (*) Per channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS • ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION

5r199p

Abstract: D66A
Contextual Info: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant

5R199P

Abstract: 5R199 IPP50R199CP JESD22
Contextual Info: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant