T-CON, GATE, SOURCE DRIVE Search Results

1000V igbt dc to dc buck converter

Abstract: 24v 12v 2A regulator EL7981 EL7144
Contextual Info: 100V DC S ta b le H ig h S w itc h T his application uses an EL7761 to drive th e gate of an N M O S F E T above th e F E T ’s source and d rain voltage. T his circuit would be useful in ap­ plications w here th e load m u st be energized con­ tinuously as in an autom obile h eadlight circuit or

TD350I

Abstract: optocoupler 12v 500ma igbt desaturation driver schematic TD350 12v and 500ma transformer vh50 TD350 SCHEMATIC
Contextual Info: TD350 ADVANCED IGBT/MOSFET DRIVER ADVANCE DATA • 0.75A MIN GATE DRIVE ■ NEGATIVE GATE DRIVE ABILITY ■ INPUT COMPATIBLE WITH PULSE TRANSFORMER OR OPTOCOUPLER ■ SEPARATE SINK AND SOURCE OUTPUTS FOR EASY GATE DRIVE ■ TWO STEPS TURN-ON AND TURN-OFF WITH ADJUSTABLE LEVEL AND DELAY

NEC 12E

Abstract: 2SJ303 MEI-1202 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR NEC ^•SBSE 2SJ303 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ303 is P-channel MOS Field Effect Transistor PACKAGE DIMENSIONS in m illim eters designed for solenoid, motor and lamp driver.

Contextual Info: 2SK2084 L , 2SK2084 S Si li con N C h a nn el MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC

33153

Contextual Info: O rder this docum ent by M C33153/D MOTOROLA M C33153 Single IGBT G ate Driver T he M C 3 31 53 is spe cifica lly d e sig ned as an IG BT d rive r for high po w e r a p plicatio ns tha t in clud e ac indu ction m otor control, bru shless d c m otor con tro l and un in te rru p ta b le po w e r supplies. A ltho ug h d e sig ned for driving

P25N06

Abstract: C33091
Contextual Info: Order this docum ent by MC33091 A/D MOTOROLA ' M C33091A Advance Information High-Side TMOS Driver T he M C 33091A is a H ig h -S id e T M O S D river desig ned for use in harsh autom otive sw itching applicatio ns requiring the cap ab ility of handling high

Contextual Info: 4AM14 Silicon N-Channel/P-Channel Complementary Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS l nl < 0.17 Q, Vos = 10 V, ID = 4 A P-channel: RDS(on) < 0.2 Q, Vos = -1 0 V, ID = -4 A • Capable of 4 V gate drive

TRANSISTOR T4 ST

Abstract: STB55NF03L
Contextual Info: STB55NF03L  N-CHANNEL 30V - 0.01 Ω - 55A D2PAK STripFET POWER MOSFET T YPE STB55NF03L • ■ ■ ■ V DSS R DS on ID 30 V < 0.013 Ω 55 A TYPICAL RDS(on) = 0.01 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW GATE CHARGE LOGIC LEVEL GATE DRIVE

Contextual Info: I SL6 4 2 0 B Fe a t u r e s The I SL6420B sim plifies the im plem entation of a com plete control and protection schem e for a high- perform ance DC/ DC buck converter. I t is designed to drive N- Channel MOSFETs in a synchronous rectified buck topology. The I SL6420B integrates control, output

STS12NF30L

Contextual Info: STS12NF30L  N - CHANNEL 30V - 0.0085Ω - 12A SO-8 STripFET POWER MOSFET TYPE STS12NF30L • ■ ■ V DSS R DS on ID 30 V < 0.01 Ω 12 A TYPICAL RDS(on) = 0.0085 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION

STS2DNF30L

Contextual Info: STS2DNF30L  N - CHANNEL 30V - 0.09Ω - 3A SO-8 STripFET POWER MOSFET TYPE STS2DNF30L • ■ ■ V DSS R DS on ID 30 V < 0.11 Ω 3 A TYPICAL RDS(on) = 0.09. Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFAC MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION

STS8NF30L

Contextual Info: STS8NF30L  N - CHANNEL 30V - 0.018Ω - 8A SO-8 STripFET POWER MOSFET TYPE STS8NF 30L • ■ ■ V DSS R DS on ID 30 V < 0.022 Ω 6 A TYPICAL RDS(on) = 0.018 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION

STP40NF03L

Contextual Info: STP40NF03L  N - CHANNEL 30V - 0.020 Ω - 40A TO-220 STripFET POWER MOSFET TYPE V DSS R DS o n ID STP40NF03L 30 V < 0.022 Ω 40 A • ■ TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature

STP80NF55L-06

Contextual Info: STP80NF55L-06  N - CHANNEL 55V - 0.005 Ω - 80A TO-220 STripFET POWER MOSFET TYPE V DSS R DS on ID STP80NF55L-06 55 V < 0.0065 Ω 80 A • ■ ■ TYPICAL RDS(on) = 0.005 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE DESCRIPTION This Power MOSFET is the latest development of

STP22NE10L

Contextual Info: STP22NE10L  N - CHANNEL 100V - 0.07 Ω - 22A TO-220 STripFET POWER MOSFET TYPE STP22NE10L • ■ ■ V DSS R DS on ID 100 V < 0.085 Ω 22 A TYPICAL RDS(on) = 0.07 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE DESCRIPTION This Power MOSFET is the latest development of

STB80NF55L-06

Contextual Info: STB80NF55L-06  N - CHANNEL 55V - 0.005 Ω - 80A D2PAK STripFET POWER MOSFET TYPE V DSS R DS on ID STB80NF55L-06 55 V < 0.0065 Ω 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE ADD SUFFIX ”T4” FOR ORDERING IN TAPE

STB40NF03L

Contextual Info: STB40NF03L  N - CHANNEL 30V - 0.020 Ω - 40A D2PAK STripFET POWER MOSFET TYPE V DSS R DS o n ID STB40NF03L 30 V < 0.022 Ω 40 A • ■ ■ TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL DESCRIPTION

STT4NF30L

Contextual Info: STT4NF30L  N - CHANNEL 30V - 0.055Ω - 4A - TSOP-6 STripFET MOSFET PRELIMINARY DATA TYPE STT4NF 30L • ■ ■ V DSS R DS on ID 30 V < 0.065 Ω 4 A TYPICAL RDS(on) = 0.055 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STD30NF03L

Contextual Info: STD30NF03L  N - CHANNEL 30V - 0.020 Ω - 30A DPAK STripFET POWER MOSFET TYPE V DSS R DS o n ID STD30NF03L 30 V < 0.025 Ω 30 A • ■ ■ TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 DESCRIPTION

STB60NF03L

Contextual Info: STB60NF03L  N-CHANNEL 30V - 0.008 Ω - 60A D2PAK STripFET POWER MOSFET PRELIMINARY DATA T YPE STB60NF03L • ■ ■ ■ V DSS R DS on ID 30 V < 0.01 Ω 60 A TYPICAL RDS(on) = 0.008 Ω OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS LOW THRESHOLD DRIVE

Contextual Info: STS6DNF30L  DUAL N - CHANNEL 30V - 0.022Ω - 6A SO-8 STripFET POWER MOSFET TYPE STS6DNF30L • ■ ■ V DSS R DS on ID 30 V < 0.025 Ω 6 A TYPICAL RDS(on) = 0.022 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STS5PF30L

Abstract: DSA00396448
Contextual Info: STS5PF30L  P - CHANNEL 30V - 0.053Ω - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS5PF 30L • ■ ■ V DSS R DS on ID 30 V < 0.060 Ω 5 A TYPICAL RDS(on) = 0.053 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STS10NF30L

Contextual Info: STS10NF30L  N - CHANNEL 30V - 0.011Ω - 10A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS10NF30L • ■ ■ V DSS R DS on ID 30 V < 0.0135 Ω 10 A TYPICAL RDS(on) = 0.011 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

Contextual Info: TOSHIBA 2SJ464 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ464 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0 .3 4V Gate Drive