T0-247 HEATSINK Search Results

Power Bipolar Transistors

Contextual Info: PACKAGE OUTLINES Page SOT78 T0-220AB SOT82 SOT186(10-220) S O U 86A (Isolated TO-220AB) SOT199 SOT399 (TOP3D) 754 755 756 757 758 759 SOT429 (TO-247) SOT43Q (TOP3L) 760 761 Philips Semiconductors Power Bipolar Transistors Package outlines Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-22QAB

austerlitz

Abstract: AN-951 AN997 Redpoint
Contextual Info: Mounting Guidelines for the SUPER-220 AN-951 by Andrew Sawle and Arthur Woodworth The impressive gains in power density born from the development of the ‘SUPER’ type power packages, i.e. the SUPER-247, has lead to a similar development of the T0-220 package. The removal of the hole and incorporation

Contextual Info: MBR40H100WTG Switch Mode Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg

MBR40H100WT

Abstract: MBR40H100WTG B40H100
Contextual Info: MBR40H100WT SWITCHMODE Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg

MBR40H100WT

Abstract: MBR40H100WTG
Contextual Info: MBR40H100WT SWITCHMODE Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg

B40H100

Abstract: MBR40H100WT MBR40H100WTG
Contextual Info: MBR40H100WT SWITCHMODE Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg

B40H100

Contextual Info: MBR40H100WT SWITCHMODE Power Rectifier 100 V, 40 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 40 A Total 20 A Per Diode Leg

Contextual Info: GEC PL E SSEY w , S E M I C O N D U C T O R S DS4412-1.2 DSF8035SK FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS 3500V RRM 335A ¡F AV 3500A ' fsm v • Snubber Diode For GTO Applications. 400(iC 4.0|JS Q r FEATURES ■ Double side cooling. ■ High surge capability.

D476

Abstract: D-476 i6ctq 16CTQ 16CTQ080 D139 7850a
Contextual Info: PD-2.192A International ^ Rectifier i 6Ct q . s e r i e s SCHOTTKY RECTIFIER 16 Amp Description/Features Major Ratings and Characteristics Characteristics 16CTQ. Units *F AV Rectangular waveform 16 A 80 to 100 V Irsm tp-5jjssine 850 A Vp 0.58 V -55 to 175

SCHEMATIC DIAGRAM OF POWER SAVER DEVICE

Abstract: power saver schematic diagram SCHEMATIC DIAGRAM OF electrical saver BV68 1530Q BM138 D9323 schottky transistor spice I1211 PIN DIODE .cir spice
Contextual Info: Special Functions RC4447 RC4447 Quad PIN Diode Switch Driver Features • ■ ■ ■ ■ ■ ■ ■ currents of the RC4447 are closely controlled through the use of Si-Cr thin-film resistor networks, resulting in repeatable ac character­ istics and a stable dc bias point. Well-matched

Contextual Info: SYNCHRONOUS ETHERNET IDT WAN PLL IDT82V3390 DATASHEET Version - 2 Datasheet July 14, 2011 DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry

Contextual Info: SYNCHRONOUS ETHERNET IDT WAN PLL IDT82V3390 DATASHEET Version - 1 Preliminary Datasheet April 15, 2011 DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry

9332 eprom

Contextual Info: SYNCHRONOUS ETHERNET IDT WAN PLL IDT82V3390 DATASHEET Version - 2 Datasheet July 14, 2011 DISCLAIMER Integrated Device Technology, Inc. reserves the right to make changes to its products or specifications at any time, without notice, in order to improve design or performance and to supply the best possible product. IDT does not assume any responsibility for use of any circuitry described other than the circuitry embodied in an IDT product. The Company makes no representations that circuitry

Contextual Info: in te r r ii HIP6003 S e p te m b e r 1 9 9 7 Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor The HIP6003 provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive an

panasonic inverter dv 707 manual

Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
Contextual Info: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594

power tmos

Abstract: 936G PR 751S K1 MARK 6PIN SOT-363 carrier chiller mc10116 MC10H210 mmsf5n03hd 0j sod-523 CASERM
Contextual Info: Semiconductor Packaging and Case Outlines Reference Manual CASERM/D Rev. 1, Aug−2003  SCILLC, 2003 Previous Edition  2000 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.

Contextual Info: in te l. SPECIAL ENVIRONMENT 80960CA-25, -16 32-BIT HIGH-PERFORMANCE EMBEDDED PROCESSOR • Two Instructions/Clock Sustained Execution • Four 5 9 M bytes/s DMA Channels with Data Chaining • Demultiplexed 32-bit Burst Bus with Pipelining • 32-bit Parallel Architecture

induction cooker fault finding diagrams

Abstract: induction cooker schematic diagram th 20594 JEDEC JESD22-B116 free datasheet transistor said horizontal tt 2222 8 PIN DIL 20594 JEDEC JESD22-B109 JESD22-B108A schematic diagram induction cooker induction cooker coil design
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

ZNR 10K 271

Abstract: ZNR 10K 271 data sheet SCHEMATIC 10kw POWER SUPPLY WITH IGBTS znr varistor 10k 201 znr 10k varistor metal oxide varistor znr znr k 270 mitsubishi IGBT 10kW detail ZNR 10 K 241 U power supply 400v circuit diagram
Contextual Info: DIP/SIP-IPM Power Devices Application Note Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Table of Contents Application Information 1.0 Introduction to the DIP/SIP-IPM Family . 1 1.1 The DIP/SIP-IPM Concept . 1

Contextual Info: HIP6005B Semiconductor February 1999 Data Sheet Buck Pulse-Width Modulator PWM Controller and Output Voltage Monitor T he H IP 6005B pro vid es com p le te con tro l and pro te ction for a D C -D C c o n ve rte r op tim ize d fo r high -perform a nce File Number

HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Contextual Info: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED

6MBP75RS120

Abstract: CLK70AA160 PVC7516 6mbp50rs120 Thermistor 15SP 6mbp150rs060 d6650 CLK100AA160 ps12047 PD10016A
Contextual Info: GEI-100364C Supersedes GEI-100364B GE Fuji Drives USA AF-300 P11 User’s Guide 1999, 2000 by GE Fuji Drives USA, Inc. All rights reserved. These instructions do not purport to cover all details or variations in equipment, nor to provide every possible

transistor D2058

Abstract: K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010
Contextual Info: PLEASE READ PRIOR TO INSTALLATION FOR SAFETY.  AC input power must be disconnected before any wiring to the AC motor drive is made. DANGER  Even if the power has been turned off, a charge may still remain in the DC-link capacitors with hazardous voltages before the POWER LED is OFF. Please do

carrier chiller

Abstract: BRIDGE RECTIFIER SMD oscilloscopes manual SOT-353 Mark va ECL Handbook smd diode Cathode is indicated by a blue band mar TO-204aa MICROSEMI PACKAGE OUTLINE Microsemi Catalog 2000 RCA 559 TO3 MECL System Design Handbook
Contextual Info: CASERM/D Rev. 0, Sep-2000 Semiconductor Packaging and Case Outlines ON Semiconductor Reference Manual and Design Guide Semiconductor Packaging and Case Outlines Reference Manual and Design Guide CASERM/D Rev. 0, Sep–2000  SCILLC, 2000 “All Rights Reserved’’