T012 Search Results

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

tip 420 transistor

Abstract: tip 222 transistor transistor tip 420 Equivalent of transistor tip 420 UP-420-B t01a UP-420 dissipator TIP-29C UP-000-CB
Contextual Info: SECTION 2 HEATDISSIPATORS FOR PLASTIC CASE, CASE-MOUNTED SEMICONDUCTORS UP2 Dual Mount Series $ UP2-T0127-2CB w/ 2 TIP-29C (TO-220) TRANSISTORS -! n o ir 100 90 j; / 70 50 / 20 10 t* / / / 40 'Sy / I 50 30 A. N.C. Horiz. Device Only M ounted to G-10. B. N.C. Horiz. & Vert.

ZBD953

Contextual Info: PNP SIUCON PLANAR POWER TRANSISTOR ZBD953 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 4 Amps * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. VALUE UNIT V CBO -140 V PARAMETER

Contextual Info: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT704 ISSUE 1 - FEB 94_ FEATURES * 100 Volt v CE0 * Gain of 3K at lc=1 Am p * P w - lW a t t APPLICATIONS * * Lamp, solenoid and relay drivers Replacement of T0126 and T0220 darlington transistors

Contextual Info: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. DNF2540-T0125 1.6 GHz to 1.66 GHz DNF Drop-in ISOLATORS & CIRCULATORS Specifications RF Frequency Isolation

ca 361 e ic

Contextual Info: PNP SILICON PLANAR POWER TRANSISTOR ZBD957 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * * * Fast switching Guaranteed hFE specified up to 1 A m p L o w collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Collector-Base Voltage

DCF1900-T0120

Contextual Info: DCF Drop-in Isolators & Circulators DCF1900-T0120 1.805GHz to 1.88GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 1.805GHz to 1.88GHz 20 dB min 0.4 dB (max) 1.25:1 1000 Watts (max)

2042A

Abstract: 2039 transistor SC-46 220kf 2049B
Contextual Info: TRANSISTOR CASE OUTLINES Case Outline 2003A unit: mm Case Outline 2042A T0126M L Case Outline 2039 Case Outline 2049B (unit: mm) T0220M F Case Outline 2048A {unit: mm) 0,44 2.0 0.» ob \ -»C *4.0— B: Base Cr Collector E: Emitter JEDEC : TO-92 EIAJ : SC-43

T0126M

Contextual Info: SÂmo VI DEO O U TPUT ADOPTION OF F B E T PRO CESS Absolute M aximum Ratings/Ta = 2 5 t! Type Number Case Applications VcBO Vceo ic Electrical C h a r a c te r is t ic s ^ = 2 5 °C Pc T] *TC=•2&V hps fr EVI m lA] m I t"CJ m m {A] m ÎA] 2SC3595 T0126

Contextual Info: HEAT SIN K S P R E S S E D A L UMI N I UM - LOUVRE S I N K S IQ-ICC I V T0220, T03P V A N D M O S T P LA S T IC PA C K A G E D D EVIC ES 1 4°fÎ/W I T “ • 32.0 ILU S1R0 I \J \J T0220, T0126, T03P A N D M O S T P LA S TIC P A C KAG ED D EVIC ES 1I 4°f!/W

TIP-29C

Abstract: UP10-T0127-2CB
Contextual Info: UP Dual Mount Series UP-T0127-2CB w/ 2 TIP-29C (T0-220) T R A N SIST O R S D E S C R IP T IO N OF CURVES A. N.C. O n ly B. N.C. W ith H oriz. D e vice M o u n t e d to G-10. H o riz. & Vert. D issip a to r. C. 2 0 0 F P M w / D iss. D. 5 0 0 F P M w / D iss.

Contextual Info: FCI Semiconductor TR410 & 425 Series ADVANCED Data Sheet 4.0 Amp PLASTIC SILICON TRIACS Mechanical Dimensions Description TR410 & 425 Series TR410 & 425 Series T0126 .3U0—*| -100 .120 .020 2 PI. .023-»] X.020 Features O O O O IC Compatible TTL & MOS Voltage Ratings From 200V to 600V

dnf2540

Abstract: DNF2540-T0125
Contextual Info: DNF Drop-in Isolators & Circulators DNF2540-T0125 1.6GHz to 1.66GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

Contextual Info: PNP SILICON PLANAR POWER TRANSISTOR ZBD957 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * Fast switching * Guaranteed hFE specified up to 1 Amp * Low collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

96 pin DIN connector right angle

Abstract: IEC603-2 5 pin din socket DIN 41612 Connectors 48 Pin TYPE f
Contextual Info: " 10 8 4 0 0 s e rie s •nverse m T01233b DIN Ü0DD142 271 8 400series 2 row ■ 3 row type ' ^ 'J 64 (Inverse DIN Press-fit Type) 96 Pin Receptacle (Press-fit) 8401-064-293XX 2-vi2.8!f' +0.004 90.Û + Q.I (3 .5 4 3 ± 0 0 0 4 ) Pin Receptacle (Press-fit)

JD-T18003-T012

Abstract: JD-T18003-T01
Contextual Info: 产品型号：JD-T18003-T01 1. 概述 1-1 范围: 此份规格书涵盖了LCD 从同丰光华到客户的运输过程中应该注意的 所有要求。 1-2 产品: LCD 模块 LCM 1-3 型号: JD-T18003-T012. 产品特征 (1) 显示类型: 1.8’’TFT, Transmissive, Normally white,View

Contextual Info: AP825 20W TO-126 High Power Resistors A high quality, innovative T0126 style resistor package designed for high frequency emitter circuits in switching power supplies or in snubber and pulse handling circuits. • Power Dissipation 20 watts with h/s <200R – 10 watts

Contextual Info: MOUNTING AND SOLDERING INSTRUCTIONS page TO126/SOT82 768 SOT186/A; SOT78 T0220AB 772 SOT199/SOT429 (TC>247)/SOT339 (TOP3D) 776 Philips Semiconductors Power Bipolar Transistors Mounting and Soldering GENERAL DATA AND INSTRUCTIONS FOR T0126/S0T82 When the driven nut or screw is in direct contact with a

Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 PROVISIONAL DATASHEET ISSUE A - MARCH 94 FEATU RES * * * Fast switching Guaranteed hFE specified up to 20 Am ps Low collector-emmiter saturation voltage T0126 ABSOLUTE M A XIM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage

UL-510

Abstract: SOCRATES UL510 22622 epcos 230 08 AM113 E17385 PEB 22622 PEB22622 PEB 22622 SOCRATES
Contextual Info: EP13 Interfacetransform for Socrates PEB 22622, 24622 13.02.2004 Preliminary Datasheet Ordering Code: Dimensions [mm]: Schematics: 5 T0127/54/01 B78421A1801A003 7 N1 LineSide 2 4 N3 1 9 6 N4 10 ChipSide N2 SenseWinding Marking: EPCOS middle block date code

Microrex qt*11

Abstract: T0126 TR410-4 TR410-6 TR410-8 TR425-4 TR425-6 TR425-8
Contextual Info: FCI Semiconductor TR410 & 425 Series ADVANCED Data Sheet 4.0 Amp PLASTIC SILICON TRIACS Mechanical Dimensions TR410 & 425 Series Description TR410 & 425 Series T0126 .100 .300—* — 4150 .120 7 .153^ .430 .271 .020 k .075 '2 PI. .615 1 .023-» X.020 -.100

T0126

Abstract: Redpoint TV1505 tv1500 T0-126 INSERTION TAG TV905
Contextual Info: r i reapoint TV1500 Powerfin - T0220, T0126, etc TV1505 Powerfin - T0220, T0126, etc Low profile - low cost twisted vane design with good thermal rating. Available with or without integral tags. Finish: Black anodised 3 0 .0 max. HEATSINK PERFORMANCE TYPE TV1500 - TV1505

GRF180

Abstract: Relay circuit LAYOUT
Contextual Info: SURFACE MOUNTING GRF180 SERIES RELAYS Application Note T0120 provides suggested surface mounting information and printed circuit board [PCB] artwork for circuit traces and RF ground plane configurations. Suggested information provided is intended for use with Teledyne Relays’ GRF180 surface

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249