T032 Search Results

Contextual Info: InNET TECHNOLOGIES tecl1 T0327S Mechanical SUGGESTED PAD LAYOUT 0,030 [ 0.7 6 ] - 0 ,2 3 0 5 ,8 5 Mo,x □ I nN et □ ' 0,370 (9 ,4 0 ) Max T0327S 0.018 [ 0.4 6 ]± 0.002 [ 0.05 ] 0,100 ( 2 ,5 4 ) NOTES: 1 .0 LEADS MEET TH E SO LDERABILITY REQUIREMENTS

DCF1900-T0320

Contextual Info: DCF Drop-in Isolators & Circulators DCF1900-T0320 3.3 GHz to 3.6 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 3.3 GHz to 3.6 GHz 20 dB min 0.4 dB (max) 1.25:1 1000 Watts (max)

Contextual Info: \ / WITH MOUNTING CLIPS M M X < K K m NOTES: 1 M ATERIALS: THERMOPLASTIC POLYESTER,GLASS FILLED, UL94V-0.COLOUR: PEBBLE GREY RAL T032 TERMINAL - BRASS MOUNTING C LIP: STEEL 2) FINISH: TERMINAL:CONTACT AREA & TERMINATION AREA. H OVER NICKEL, THICKNESS = 1.25 MICROMETER

C7623

Contextual Info: InNET TECHNOLOGIES T0329S tecl1 Electrical E L E C T R IC A L S P E C IF IC A T IO N S REV. 0 1 TURNS RATIO : (1 -3 ) (6 -8 ) 1 : 1 ± 3% 1 : 1 ± 3% : (1 6 -1 4 ) : (1 1 -9 ) INDUCTANCE: 15uH MIN. 0 ( 1 —3 ) = ( 6 —8 ) 0 .0 1 V LEAKAGE INDUCTANCE:

DCF1900-T0320

Abstract: MICA
Contextual Info: DCF Drop-in Isolators & Circulators DCF1900-T0320 3.3GHz to 3.6GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 3.3GHz to 3.6GHz 20 dB min 0.4 dB (max) 1.25:1 1000 Watts (max)

SDA-8500

Contextual Info: WITH MOUNTING CLIP5 + 0.10 0.00 SEE DETAIL X in 0 . 0 0 _ m 6. 00 ±0. 1 0 NOTES: 1 MATERIALS: THERMOPLASTIC POLYESTER,GLASS FILLED, UL94V-0.COLOUR: PEBBLE GREY RAL T032 SEE DETAIL Y ALL CONTACTS TERMINAL - BRA55 MOUNTING CLIP: STEEL 2) FINISH: CONTACT AREA

2Ns551

Abstract: 2N5219 2N5449 2N5769 2N5172 2N5209 2N5210 2N5220 2N5223 2N5232
Contextual Info: T032 Plastic Package T ra n ^ ^ jffiN Maximum Ratings Type No. ^CBO ^CEO ^EBO V) (V) (V) Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) 'c (A) ^CBO ^CB 'ces VCE (V) (mA) ®(V) m Min Min Min 2N5172 25 25 5 0.4 0.15 CM 25 2N5209

M3263

Abstract: PBYR30035CT PBYR30040CT PBYR30045CT PBYR30 M3269 20UNC
Contextual Info: PBYR30035CT PBYR30040CT PBYR30045CT 711002b 0041 fl14 151 • PHIN DEVELOPMENT DATA This data sheet contains advance information and specifications are subject to change w ithout notice. SbE D PHILIPS INTERNATIONAL ■ -P 0 3 -Z Ì SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES

Contextual Info: Shear Patterns - Dual Grid Micro-Measurements Transducer-Class Strain Gages GAGE PATTERN Actual size shown. Enlarged when necessary for definition. inch DIMENSIONS RES. IN OHMS GAGE DESIGNATION See Note 1 STANDARD CREEP CODE millimeter ENCAPSULATION OPTION

RT3062

Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

BC138

Abstract: 2N4042 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR 2N3523 BSW12 OC74 transistor bc138 2sc113
Contextual Info: SYMBOLS & CODES EXPLAINED S YMBOL S & CODES C O M M O N TO MO RE T H A N ONE T E C H N I C A L SECTI ON LIN E No. TYPE No. ▼ — New Typ e + — Revised Specifications # Non-JEDE C type m anufactured outside u :s . a . t Switching type, also listed in Section 12

SFT308

Abstract: SFT307 2N2625 2sc113 65T1 PNP GE BSY32 2G302 2G395 2N2209 2SA204
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N5735

Abstract: bc507 BSW12 BSY37 2N5736 2N784A 2sc113 BLY11 MM1758 TIS107
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. 0 i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2sc113

Abstract: CI44
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

GT123

Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

BSW12

Abstract: 2n2718 2sc113 CI44 GW 9n BFW74 BFW75 BFW76 BFX53 T046
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

AD166

Abstract: 434m 2SB424 KJ2000 KL8503 LT5054 LT5087 2N353 LT5080 TI368
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C

2sc113

Abstract: STE401 A154 GI3643 ST01 T0106 T018
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: BSE D B ^ 53=131 □□33001 7 B PBYR16035TV PBYR16040TV PBYR16045TV U tV tLU K M tlN I UAIA This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. y v N AUER PHILIPS/DISCRETE 7 -0 3 -2 SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES

2N2902

Abstract: 2SC102 1763-0625 10MSA 2SD118Y 685M TK30558 TK30557 TK30559 TK30560
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N5576

Abstract: MT111 2N1828 MP1537 BUY28 B170026 2n1821 2N2535 2n2585 MP1552A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D S Y M B O L S & C O D E S COM MON TO M O R E T H A N O N E T E C H N I C A L S E C T IO N LIN E No. T Y P E No. ▼ — New Type + — Revised Specifications # - Non-JEDEC type manufactured outside u :s .a . t Switching type, also listed in Section 12

cx3804

Abstract: pegatron pegatron A35 A35 pegatron diode c0510 pegatron a24 Cx3808 q8607 IT8752E tpc8118
Contextual Info: 5 4 3 M52V BLOCK DIAGRAM 2 1 Power CPU VCORE PENRYN DC&QC Page 80 System Page 3~5 D D Page 81 FSB 1066MHz 1.5VS & 1.05VS LCD Panel Page 82 Page 45 PCIE x16 MXM CRT DDR2 800MHz CANTIGA nVIDIA NB9x Page 46 DDR & VTT DDR2 So-DIMM Page 83 Page 7~9 Page 70 +2.5VS

TAIMAG HD 081 A

Abstract: ce-0702 TAIMAG HA 003 1C-8100 ALC660 CE-0703 0845a asus sw3205 R3627
Contextual Info: 5 4 3 2 1 G1S: MEROM/965-PM/ICH8-M/NB8P-GS BLOCK DIAGRAM CLOCK GEN CK505 ICS9LPR363CGLF-T D Merom CPU FAN + THERMAL SENSOR 478B uFCPGA VRAM CH.C GDDR3 *2 LVDS PAGE 45 PAGE 46 PAGE 50 FSB 800 MHz 136 FBGA PAGE 72 NVIDIA NB8P-GS CRT PAGE 3-6 VRAM CH.A GDDR3 *2

C8816

Abstract: ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103
Contextual Info: 5 4 3 2 1 AC_BAT_SYS 0925 +5VO 0925 + Q8200 R8209 4.7Ohm D + 1 D1_1 G1 8 2 D1_2 S1/D2_3 7 3 G2 S1/D2_2 6 4 S2 S1/D2_1 5 G D +1.05VO S Q8201 SI4800BDY @ JP8203 1 C8211 0.1UF/50V MLCC/+/-10% R8206 0Ohm C8213 4.7UF/6.3V MLCC/+/-10% 1 2 TPC28T T8209 TPC28T T8216