T0Q4404 Search Results

Contextual Info: 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The ISSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI' s high-performance CMOS technology. This highly reliable pro­

tdq4-M

Abstract: HP 2231 IS42S16128
Contextual Info: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.

Contextual Info: 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION DECEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • Automated Byte Write and Block Erase — Industry-Standard Command User Interface

628F

Abstract: MAX714
Contextual Info: IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY AD VA N C E INFORM ATIO N DEC EM B ER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • Industrial Temperature Operation 40°C to +85° C

Contextual Info: issr 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation Industrial Temperature Operation 40°C to +85°C • High-Performance Read

Contextual Info: ISSI IS24C02-3 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 nA • Low voltage operation — 3.0V Vcc = 2.7V to 5.5V • Hardware write protection

Contextual Info: I S CMOS SINGLE CHIP 8-BIT MICROCONTROLLER S F ADVANCE INFORMATION AR PIL 1997 FEATURES G ENERAL DESCRIPTION • 8K x 8 ROM IS80C52 only The ISSI IS80C52/32 is a high-performance micro­ controller fabricated using high-density CMOS technology. The CMOS IS80C52/32 is functionally

Contextual Info: ISSI IS27LV020 262,144 X 8 HIGH-SPEED, LOW VOLTAGE CMOS EPROM ADVANCE INFORMATION JULY 1996 FEATURES DESCRIPTION • Fast read access time: 90 ns • Industrial and commercial temperature ranges available • 5V ±10% or 2.7V to 3.6V power supply tolerance

24C04

Abstract: IS24C04 IS24C04-G IS24C04-GI IS24C04-P IS24C04-PI
Contextual Info: IS24C04 m 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • • • • • • • • Low power C M O S — Active current less than 2 mA — Standby current less than 8 |iA Hardware write protection — Write control pin