T20 56 DIODE Search Results

1SS133 T-77

Abstract: T84 5pin
Contextual Info: Introduction Product packaging and availability Leaded diodes on tape Product availability for the leaded diodes is shown in the following tables and is ranked as standard (★), or semi-standard (☆). • Standard (★) means that the part is kept in stock and is readily available.

simple 5.1 home theater circuit diagram with usb port

Contextual Info: high performance low power computing Colibri T20 Datasheet Toradex AG l Altsagenstrasse 5 l 6048 Horw l Switzerland l +41 41 500 48 00 l www.toradex.com l info@toradex.com Colibri T20 Datasheet Page | 2 Revision History Date Doc. Rev. Colibri T20 Version Changes

marking t17

Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
Contextual Info: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3

Contextual Info: Industrial Line – T20 Series 20W SINGLE, DUAL & TRIPLE OUTPUT HIGH PERFORMANCE DC/DC CONVERTER Specifications INPUT Input voltage range 12V nominal 9 – 18V 24V nominal 18 – 36V 48V nominal 36 – 75V “W” model 24V nominal 9 – 36V 48V nominal 18 – 75V

Contextual Info: MLL5913 thru MLL5956 Microsemi Corp. ? A-IV/I tub ftotiti experts 1V4 f t SCO rrSD ALE , 4 / h>i im*ie information call (61 2) 941-6300 D E S C R IP T IO N / F E A T U R E S LEADLESS GLASS ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING

DZ89-C91

Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
Contextual Info: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £

RJA14

Contextual Info: WILLAS FM120-M+ THRU SD103ATW FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers SCHOTTKY

PS-3PF-S4T1-PKL1

Abstract: CT3528 HTD12 PS-10PF-D4T1-PKL1 NEC c157 lcd power board schematic APS 254 CBD49 htd11 CRML08W TEMSV
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

dynamic ram binary cell

Contextual Info: VIS Preliminary VG3664321 4 1(2)BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced

GR42-6

Abstract: 2j 103k GR43-2 GHM3145 GHM3045 rr 102k 2kv rr 681k- 1kv capacitor GRM42-6 rr 471k 1kv GRM40B103K
Contextual Info: This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 Chip Monolithic Ceramic Capacitor CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-4 This is the PDF file of catalog No.C02E-4. No.C02E4.pdf 98.8.21 Chip Monolithic Ceramic Capacitor

pme20-24t0515

Abstract: PMT-048 T20 46 diode pme20-24t T20 80 diode
Contextual Info: Industrial Line – T20 Series 20W SINGLE, DUAL & TRIPLE OUTPUT DC/DC HIGH PERFORMANCE Features • Output current up to 4A • Standard 2” x 1.6” x 0.4” package • High efficiency up to 87% • 2:1 and 4:1 wide input voltage range • Six-sided continuous shield

smd glass zener diode color codes

Abstract: KA 511 common anode alphanumeric display 5252 F 1108 ANSI C78.377 2011 F1109 5252 F led D1060 F1060 TLOH16CP H1032
Contextual Info: 2011-3 PRODUCT GUIDE LED Lamps SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g High-Brightness LED Lamps Overview of Toshiba’s Visible LED Lamp Family 1. New Product Digest 1. 2. 3. 4. 5. High-Luminous-Flux White LED Lamps for General Lighting See-Through Type : TL19W01 Series . 4

dynamic ram binary cell

Abstract: QBA-1 qab1
Contextual Info: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

GRM230Y5V475Z16

Abstract: GR42-6 hr r 681k- 1kv GR40 MURATA HR R 221k 2kv GR42-2 grh110 GHM1540 GHM2143 B 473 M AC250 PT GHM3145
Contextual Info: This is the PDF file of catalog No.C02E-5. No.C02E5.pdf 99.8.13 Chip Monolithic Ceramic Capacitor CHIP MONOLITHIC CERAMIC CAPACITOR Murata Manufacturing Co., Ltd. Cat.No.C02E-5 This is the PDF file of catalog No.C02E-5. No.C02E5.pdf 99.8.13 Chip Monolithic Ceramic Capacitor

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS N Grade 64Mb CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

VG36648041BT-7

Abstract: VG36648041CT
Contextual Info: VIS Preliminary VG36648041CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

lvds connector pinout

Abstract: RS232A tegra 2 T20 nvidia tegra 3 pin connector 40 pins led screen LVDS nvidia Tegra t20 LVDS connector 40 pins NAME LVDS 30 pin hirose dvi tegra 2 nvidia led screen LVDS connector 40 pins
Contextual Info: Iris V1.1 Baseboard Datasheet Toradex AG l Altsagenstrasse 5 l 6048 Horw l Switzerland l +41 41 340 80 85 l www.toradex.com l info@toradex.com Iris Datasheet Revision History Date Doc. Rev. Iris Version Changes 20-Jan-11 Rev. 0.9 V1.0 Preliminary Release 24-Mar-11

TC74HC181

Abstract: TC74HC181P IC 74LS181 pin diagram 6p3p
Contextual Info: TC74HC181P TC74HC18 1 P A R ITHMETIC LOGIC UNIT/FUNCTION GENERATOR The TC74HC181 is a high speed CMOS ARITHMETIC LOGIC UNIT ALU /FUNCTION GENERATORS fabricated with silicon gate C^MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining

VG36641641

Contextual Info: VIS VG366480 16 41CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, repectively. It is fabricated with an advanced submicron CMOS

SD10

Abstract: 100L AD8385 AD8389 adi clx
Contextual Info: 10-Bit, 12-Channel Decimating LCD DECDRIVER with Level Shifters AD8385 FEATURES GENERAL DESCRIPTION The AD8385 provides a fast, 10-bit, latched decimating digital input that drives 12 high voltage outputs. 10-bit input words are loaded into 12 separate high speed, bipolar DACs sequentially.

VG36641641

Abstract: VG36641641BT
Contextual Info: VIS Preliminary VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only