RF TRANSISTOR 10GHZ
Abstract: 10GHz counters
Text: SP8852E 2•7GHz Parallel Load Professional Synthesiser Preliminary Information FEATURES • 2·7 GHz Operating Frequency ■ Single 5V Supply ■ Low Power Consumption <1·3W ■ High Comparison Frequency : 20MHz ■ High Gain Phase Detector : 1mA/rad ■ Zero ‘Dead Band’ Phase Detector
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SP8852E
20MHz
RF TRANSISTOR 10GHZ
10GHz counters
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796310
Abstract: No abstract text available
Text: SP8853 1.3 GHz Professional Synthesiser Data Sheet VEE3 IC Cd LOCK DETECT 2 1 28 27 26 NC PD1 OUTPUT 3 5 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 VCC4 8 VCC1 SP8853 23 VCC3 22 GROUND RF INPUT 11 19 VEE2 13 14 15 16 17 18 VCC2 12 NC XTAL2 CLOCK XTAL 1 20 ENABLE
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SP8853
175mW
796310
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Transistor 502k
Abstract: No abstract text available
Text: SP8853A/B 1•3GHz Professional Synthesiser IC Cd LOCK DETECT 2 1 28 27 26 NC VEE3 3 5 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 VCC4 8 VCC1 SP8853 23 VCC3 22 GROUND RF INPUT 11 19 VEE2 13 14 15 16 17 18 VCC2 12 NC XTAL2 CLOCK XTAL 1 20 ENABLE 21 10 DATA 9 RF INPUT
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SP8853A/B
SP8853
175mW
Transistor 502k
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DS3640
Abstract: Transistor 502k
Text: SP8861 1•3GHz Low Power Single-Chip Frequency Synthesiser LOCK DETECT 1 28 27 26 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 23 VCC3 VCC4 8 22 GROUND VCC1 9 21 XTAL 1 RF INPUT 10 20 XTAL2 RF INPUT 11 19 VEE2 16 17 18 20·3V to 17V 255°C to 1150°C 240°C to 185°C
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SP8861
DS3640
Transistor 502k
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SP8852E
Abstract: SP8854E SP8855E
Text: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad
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SP8854E
DS4238
20MHz
to1100
SP8852E
SP8854E
SP8855E
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discrete phase sequence detector
Abstract: Transistor 502k
Text: SP8861 1•3GHz Low Power Single-Chip Frequency Synthesiser LOCK DETECT 1 28 27 26 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 23 VCC3 VCC4 8 22 GROUND VCC1 9 21 XTAL 1 RF INPUT 10 20 XTAL2 RF INPUT 11 19 VEE2 16 17 18 20·3V to 17V 255°C to 1150°C 240°C to 185°C
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SP8861
the1996
HB2480
DS3640
SP8861
discrete phase sequence detector
Transistor 502k
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331029
Abstract: SP8852E
Text: SP8852E 2•7GHz Parallel Load Professional Synthesiser Preliminary Information FEATURES • 2·7 GHz Operating Frequency ■ Single 5V Supply ■ Low Power Consumption <1·3W ■ High Comparison Frequency : 20MHz ■ High Gain Phase Detector : 1mA/rad ■ Zero ‘Dead Band’ Phase Detector
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SP8852E
DS4237
SP8852E
SP8854E
16-bit
SP8855E
331029
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SP8852E
Abstract: SP8854E SP8855E 10GHz counters
Text: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad
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SP8854E
DS4238
20MHz
to1100
SP8852E
SP8854E
SP8855E
10GHz counters
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BUT12
Abstract: C-16 MT46V8M16 MT48LC4M16A2 25L128160
Text: ARM PrimeCell MultiPort Memory Controller PL175 Revision: r1p0 Technical Reference Manual Copyright 2002 ARM Limited. All rights reserved. ARM DDI 0230A ARM PrimeCell MultiPort Memory Controller (PL175) Technical Reference Manual Copyright © 2002 ARM Limited. All rights reserved.
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PL175)
BUT12
C-16
MT46V8M16
MT48LC4M16A2
25L128160
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discrete phase sequence detector
Abstract: DS3640 c11t phase detector 3GHz SL562 SP8861 phase sequence detector C11C2 digital phase detector three phase sequence detector
Text: SP8861 1•3GHz Low Power Single-Chip Frequency Synthesiser LOCK DETECT 1 28 27 26 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 23 VCC3 VCC4 8 22 GROUND VCC1 9 21 XTAL 1 RF INPUT 10 20 XTAL2 RF INPUT 11 19 VEE2 16 17 18 20·3V to 17V 255°C to 1150°C 240°C to 185°C
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SP8861
discrete phase sequence detector
DS3640
c11t
phase detector 3GHz
SL562
SP8861
phase sequence detector
C11C2
digital phase detector
three phase sequence detector
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Untitled
Abstract: No abstract text available
Text: SP8854E 2.7GHz Parallel Load Professional Synthesiser Preliminary Information DS4238 Features • 2•7 GHz Operating Frequency • Single 5V Supply • Low Power Consumption <1·3W • High Comparison Frequency : 20MHz • High Gain Phase Detector : 1mA/rad
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SP8854E
DS4238
20MHz
to1100
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DS3640
Abstract: discrete phase sequence detector phase sequence detector for three phase SL562 SP8861 phase sequence detector digital phase detector
Text: SP8861 1•3GHz Low Power Single-Chip Frequency Synthesiser LOCK DETECT 1 28 27 26 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 23 VCC3 VCC4 8 22 GROUND VCC1 9 21 XTAL 1 RF INPUT 10 20 XTAL2 RF INPUT 11 19 VEE2 16 17 18 20·3V to 17V 255°C to 1150°C 240°C to 185°C
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SP8861
DS3640
discrete phase sequence detector
phase sequence detector for three phase
SL562
SP8861
phase sequence detector
digital phase detector
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single phase power factor improve circuit diagram
Abstract: SP8852E SP8854E SP8855E 10GHz counters
Text: SP8852E 2•7GHz Parallel Load Professional Synthesiser Preliminary Information FEATURES • 2·7 GHz Operating Frequency ■ Single 5V Supply ■ Low Power Consumption <1·3W ■ High Comparison Frequency : 20MHz ■ High Gain Phase Detector : 1mA/rad ■ Zero ‘Dead Band’ Phase Detector
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SP8852E
20MHz
single phase power factor improve circuit diagram
SP8852E
SP8854E
SP8855E
10GHz counters
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phase detector
Abstract: SP8852E SP8854E SP8855E Philips 10nF Capacitor 1000V
Text: SP8852E 2•7GHz Parallel Load Professional Synthesiser Preliminary Information FEATURES • 2·7 GHz Operating Frequency ■ Single 5V Supply ■ Low Power Consumption <1·3W ■ High Comparison Frequency : 20MHz ■ High Gain Phase Detector : 1mA/rad ■ Zero ‘Dead Band’ Phase Detector
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SP8852E
20MHz
phase detector
SP8852E
SP8854E
SP8855E
Philips 10nF Capacitor 1000V
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phase sequence detector
Abstract: colpitts oscillator SL562 SP8853
Text: SP8853A/B 1•3GHz Professional Synthesiser IC Cd LOCK DETECT 2 1 28 27 26 NC VEE3 3 5 25 PD2 OUTPUT POWER DOWN 6 24 RPD VEE4 7 VCC4 8 VCC1 SP8853 23 VCC3 22 GROUND RF INPUT 11 19 VEE2 13 14 15 16 17 18 VCC2 12 NC XTAL2 CLOCK XTAL 1 20 ENABLE 21 10 DATA 9 RF INPUT
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SP8853A/B
SP8853
175mW
phase sequence detector
colpitts oscillator
SL562
SP8853
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC59R7218XB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAM Direct RDRAMTM ¡s a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video,
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TC59R7218XB
72-Mbit
600MHz
800MHz
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TC59RM716GB
Abstract: 9T20T
Text: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications
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TC59RM716GB-8
128-M
800-M
TEST77
TEST78
P-BGA54-1312-1
TC59RM716GB
9T20T
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DA30F
Abstract: TFR 600M
Text: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses
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128Mb
300MHz
400MHz
DA30F
TFR 600M
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where
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PD488448,
JUPD488448
128M-bit
PD488488
144M-bit
14072EJ1V0D
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Untitled
Abstract: No abstract text available
Text: %-n DC N NO. 20.Ma y . 1998 42065 b DATE iS. tic REV. o s o z E o n s 'ON ON IM VH 0 2 n M fi £ D E S C R I P T I ON R E V I S E D ${ El DR. M.ABE E N G L I S H & $ M APPD. m è CHK. T.OKAMURA S, i? AP P D . Vys rVvv^ ñam o vw V P A N E L PANE L C U T O U T S
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t22-t
SJ032050
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toshiba tlc 711
Abstract: RDRAM Clock T3D Toshiba
Text: TO SH IB A T E N T A T IV E TC59RM716 8 MB/RB T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILIC O N M O N O L IT H IC Overview The Direct R a m b u s T M DRAM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video
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TC59RM716
128/144-Mbit
600-MHz
800-MHz
P-TFBGA62-1312-0
toshiba tlc 711
RDRAM Clock
T3D Toshiba
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QT41T
Abstract: RDRAM Clock NEC RDRAM 36
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where
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JUPD488448
128M-bit
PD488488
144M-bit
P62FB-80-DQ1
14072EJ2V0D
PD488448,
PD488488FB]
QT41T
RDRAM Clock
NEC RDRAM 36
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IDA45
Abstract: ecl book
Text: 256M/288M-bit RAMBUS DRAM HY5R256/288HC 256/288M-bit 512Kx16/18x32s PRELIMINARY Overview The Rambus D irect R D R A M is a general purpose highperformance m em ory d evice suitable for use in a broad range o f applications including com puter m em ory, graphics,
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256M/288M-bit
HY5R256/288HC
256/288M-bit
512Kx16/18x32s)
256/288-M
IDA45
ecl book
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DIS44
Abstract: No abstract text available
Text: TARGET KM416RD4C/KM418RD4C Direct RDRAM 64172Mbit RDRAM 4M X 16/18bit Direct RAMBUS DRAM R evision 0.7 S eptem ber 1998 Page 1 ELECTRONSCS Revision 0.7 Septem ber 1998 TARGET KM416RD4C/KM418RD4C Direct RDRAM Revision History Version 0.1 Feb. 1998 - Target
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KM416RD4C/KM418RD4C
64172Mbit
16/18bit
TEST75,
TEST79
Page63
DIS44
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