T2D 65 Search Results

Contextual Info: World Products Inc. 19654 8th St. East, Sonoma, CA, USA, 95476 . . Phone: 707 996-5201 . . Fax: (707) 996-3380 Metal Oxide Varistors - 18mm / 20mm Taping Specifications Straight Leads Item Outward Crimp Inline Crimp Inward Crimp Symbol T44, T1H T5, T30 T1X, T45 T50, T2X T2, T25 T60, T3X T40, T4X T35, T2D

T2D 53

Abstract: T2D 70 T2D 35 "T2D" T2D 30 T2D 66 T2D 17 T2D 32 marking T2D T2D 31
Contextual Info: 7 ADVANCE M T2D T 132 B, M T4D232 B, M T8D432 B 2, 4 MEG X 32 B U R S T EDO DRAM M O D U LE S BURST EDO DRAM MODULE 1, 2, 4 MEG X 32 4 , 8 16 MEpABYT£, 5V, BURST EDO V FEATURES • 72-pin, single-in-line m emory module (SIMM) • Burst EDO order, interleave or linear, programmed by

T2D 03

Abstract: T2D 21 T2D 07 t2d7 T2D14 t2d6 T2D 9 sh69p26 t2d 01 t2d 04
Contextual Info: SH69P26 OTP 6K 4-Bit Micro-controller Features SH6610D-based single-chip 4-bit micro-controller OTPROM: 6k X 16 bits RAM: 389 X 4 bits - 69 System control register - 320 Data memory Operation voltage: - fOSC = 30kHz - 4MHz, VDD = 2.4V - 5.5V - fOSC = 4MHz - 8MHz, VDD = 4.5V - 5.5V

t2d 82

Abstract: t2d 76 t2d 96
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

t2d7

Abstract: T2D 1D T2D 09 0/diode T2D7
Contextual Info: SH69P55A/K55A OTP/MASK 8K 4-Bit Micro-controller With LCD Driver & 10-bit SAR ADC Features „ Oscillator Code Option - Crystal Oscillator: 32.768kHz, 400kHz - 8MHz - Ceramic Resonator: 400kHz - 8MHz - External RC Oscillator: 400kHz - 8MHz - Internal RC Oscillator: 4MHz ±5%

VMVSJ150GP

Abstract: VMVM2C175GP VMVMJ175GP VMVS2A150GP VMVS2TW100GP VMVSJ100GP VMVM3A175GP VMVS2TW070GP VMVS2C100GP VMVMJ100GP
Contextual Info: 3L VMV Series 50–175W Champ H.I.D. Luminaires Cl. II, Groups E, F, G, Cl. III & Simultaneous Presence HPS 50W, 70W Marine & Wet Locations 3, 3R, 4, 4X; IP56 to IP66 Applications: Options: VMV series Champ luminaires are used: • In manufacturing plants, refineries,

T2D 90

Abstract: "T2D" 100w hps ballast v2pc20 photocell hps ignitor T2D 75 T2D 70 F2MVS25Y100 OSRAM ignitor T2D 78
Contextual Info: Champ F2MV Mini-Floodlights Cl. I, Div. 2, Groups A, B, C, D Cl. I, Zone 2, Group IIC Marine locations NEMA Type 4X Wet locations 7L F2MV is a compact floodlight consisting of a Corro-Free epoxy coated copper-free aluminum enclosure, with stainless steel external

DMVM2C175GP

Abstract: DMVS2A150GP t2d t3d DMVM2A175GP DMVMJ175GP DMVSJ100GP DMVSJ070GP DMVM2A250GP DMVSJ150GP S826TB
Contextual Info: 3L DMV Series 50-250W For Combustible Dusts Champ H.I.D. Luminaires Applications: Options: DMV series Champ luminaires are used: The following special options are available from the factory by adding suffix to luminaire Cat. No.: • In applications made hazardous by the

10XTV2-CT-T3

Abstract: 15XTV2-CT-T3 20XTV2-CT-T2 10XTV-CT 5xtv2-ct-t3 20XTV1-CT-T2 15XTV1-CT-T2 20XTV-CT 15XTV-CT 10XTV1-CT-T3
Contextual Info: R XTV High-temperature self-regulating heating cables Electrical freeze protection and processtemperature maintenance for both nonhazardous and hazardous locations. The XTV family of self-regulating heating cables provides solutions for industrial freeze protection and process-temperature

CPMVS2W070

Abstract: induction lamp transistor Electronic ballast "INDUCTION LAMP" CPMVIG2W085 CPMVS1W070 S826TB CPMVM1W100 induction lamp ballast V2PC20 CPMVFB2W026
Contextual Info: Champ-Pak Wall Pack Luminares Cl. I, Div. 2, Groups A, B, C, D Restricted Breathing Cl. I, Div. 2 & Zone 2 Suffix S826 Certified for IEC Zone 2 (Suffix S826TB) Cl. II, Groups F, G Cl. III & Simultaneous Presence Marine & Wet Locations Enclosure Type 4X, IP66

EV1301

Abstract: Luminaire Photometric data EVIBX2301 EVIA2301 EVIJ4501 T4A 250V photometric data lamps t2d diode EVIA2500 RA636
Contextual Info: EVI Series Explosionproof Incandescent Luminaires Factory Sealed 100–500W Medium and Mogul Base Applications: EVI series incandescent luminaires are used: • For Type 4X, marine, wet location and hose down environments. • Where a consistent light level relatively

Luminaire Photometric data

Abstract: induction lamp induction lamp ballast DMVIG2C085GP ballast for induction lamp photometric data lamps VMVIG2A055GP QM25 T2D 96 diode t2d diode
Contextual Info: 5L Luminaires with Induction Lighting System VMVIG and DMVIG Series Cl. I, Div. 2, Groups A, B, C, D Cl. I, Zone 2, Group IIC Restricted Breathing Suffix S826 for CI. I, Div. 2 & Zone 2 Enclosure Type 4X, IP66 Wet Locations Marine Locations UL and cUL Listed

40595

Abstract: TYCO electronics date code
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY 1 T C 0 E L E C T R O N IC S P U B L IC A T IO N R IG H T S -, - RESERVED. C O R P O R A T IO N . D 0.50 + 0.03 [.020 + .0 0 1 ] C A AMP 1471-9 REV 31M AR2000 2 R E V IS IO N S

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY 1 T C 0 E L E C T R O N IC S P U B L IC A T IO N R IG H T S -, - RESERVED. C O R P O R A T IO N . D 0.50 + 0.03 [.020 + .0 0 1 ] C A AMP 1471-9 REV 31M AR2000 2 REVISIONS

Contextual Info: A F 28003 SF2994-<£o'2<S NOTES: 1. MATING: 2. MATERIALS: .2Sd Interface dimensions per Mil-C-39012/ SMA Series and Solitron/Microwave MD107. B O D Y . Stainless Steel per AMS-5640, Type 303, Cond. A. CONTACT.Beryllium Copper per QQ-C-530, Cond H.

Contextual Info: ADVANCE M ld C a a iM I MT2D T 132 B, MT4D232 B, MT8D432 B 2, 4 MEG X 32 BURST EDO DRAM MODULES 1, BURST EDO DRAM MODULE 1,2,4 MEG x 32 4, 8, 16 MEGABYTE, 5V, BURST EDO FEATURES • 72-pin, single-in-lihe memory module (SIMM) • Burst EDO order, interleave or linear, programmed by

EVMA42251

Abstract: EVMA92171 METAL HALIDE 400W evma92401 S812 EVMA42151 HPS 400w hps ballast EVMA92251 EVMA92101
Contextual Info: Hazard•Gard H.I.D. Floodlights 7L Cl. I, Div. 1 & 2, Groups C, D Cl. I, Div. 1 & 2, Groups B, C, D add suffix GB Cl. I, Zone 1 Marine Locations, IP66 Wet Locations Factory-sealed Applications: Standard Materials: Hazard•Gard Luminaires with Trunnion

Contextual Info: N-Channel JFET Monolithic Dual caiocnc CORPORATION SST5912 DESCRIPTION FEATURES • • • • The SST5912 is a High Speed N-Channel Monolithic JFET pair encapsulated in a surface mount plastic SO-8 package. The device is designed for high gain typically > 6000 jxmhos ,

T2D 85 diode

Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
Contextual Info: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V

Contextual Info: Beacon Tower Flasher FS & FA Series B-KON Flashers have proven their reliability through years of use on communication towers, smoke stacks, cooling towers, tall buildings, bridges and utility towers. The highest quality components are encapsulated in a rugged plastic

34B SOT

Abstract: NDT455N
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

RT4 RR3

Abstract: con10A D52-100 RC3304N SP0503 B12 TT6 5rr11 T2D 53 dmo2 t2d 68
Contextual Info: 5 4 3 2 1 T TP1 Vcc3v3 RxTSel TxTSel C RxTSEL TxTSEL 106 INT_TRATIO 103 PTS1_RCLKE PTS2_TCLKE 101 102 22 21 20 CLKSEL0 CLKSEL1 CLKSEL2 RDY_EQC4 TEST ICT CS_EQC3 ALE_EQC2 WR_EQC0 RD_EQC1 38 GCK3 100 RxON SCS1 49 SCS1 R3 SEL 65 67 63 122 TMS TCK TDI TDO 50 51

T2D 24 DIODE

Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

CMM0331-AK

Contextual Info: S = = €E LE R Ê T£K CMM0331 824 to 928 MHz 3V, 30.5 dBm AMPS Power Amplifier A d v a n c e d P ro d u c t In form ation S e p te m b e r 1 9 9 6 1 o f 2 Features □ 55% Power Added Efficiency from 3V Supply □ 30.5 dBm Output Power □ Low Harmonic Distortion