T32 N 1200 Search Results

PSD3-20

Abstract: PSD5-28
Contextual Info: • ■ ■ Uliw Split Bobbin Power Transformers 115V and 115/230V 50/60Hz T31 and T32 T31 Series:Single 115V Primary T32 SeriesiDual 115/230 V Primary Single Dual Secondary Connections Primary Primary Size Parallel Series P/N P/N VA VAC Arms VAC Arms T31-1-10

3203 MOSFET

Abstract: MOTOROLA T3E IM40t AN569 MTM15N40E TMOS power FET motorola mosfet
Contextual Info: MOTOROLA SC XSTRS/R F bfiE » • h3b.7ESM GQTflST3 T32 noTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTM15IM40E Designer's Data Sheet Motorola Preferred Device P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate T This TMOS Power FET is designed for high voltage, high speed

T32 N 1200

Abstract: 1SR139-600 ROHM 1SR
Contextual Info: 1SR139-600 Diodes Rectifier diode 1SR139-600 zApplications 1 General rectification zDimensions Unit : mm) CATHODE BAND (GREEN) 6 φ0.6±0.1 ① ② zFeatures 1) Cylindrical mold. (MSR) 2) High reliability 3.0±0.2 29±1 29±1 φ2.5±0.2 ROHM : MSR ①

1SR139-600

Contextual Info: 1SR139-600 Diodes Rectifier diode 1SR139-600 zApplications 1 General rectification zExternal dimensions Unit : mm) CATHODE BAND (GREEN) 6 φ0.6±0.1 ① ② zFeatures 1) Cylindrical mold. (MSR) 2) High reliability 3.0±0.2 29±1 29±1 φ2.5±0.2 ROHM : MSR

1SR139-400

Contextual Info: 1SR139-400 Diodes Rectifier diode 1SR139-400 zExternal dimensions Unit : mm zApplications High speed rectification CATHODE BAND (GREEN) 4 φ0.6±0.1 ① ② zFeatures 1) Cylindrical mold. (MSR) 2) High reliability. 3) Fast recovery speed. 3.0±0.2 29±1

T32 N 1200

Abstract: 1SR153-400
Contextual Info: 1SR153-400 Diodes Rectifier diode 1SR153-400 zApplications For fast rectifier zExternal dimensions Unit : mm CATHODE BAND (SILVER) φ0.6±0.1 ① ② 4 zFeatures 1) Cylindrical mold type. (MSR) 2) High reliability. 3) High switching speed. 3.0±0.2 29±1

DE 156

Abstract: FP35R12KT4
Contextual Info: Technische Information / technical information FP35R12KT4_B15 IGBT-Module IGBT-modules EconoPIM 2 Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode EconoPIM™2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode ' * + ',-. / 0

800H-FRXT

Abstract: 700-ZBR520AZ1 IEC wiring schematic symbols estop 700-ZBR 100-DNX42R allen-bradley safety relay 700-ZBR520AZ1 Safety Relay 800P-F2CB 800H-FRXT6A5 800t-fxt6a5
Contextual Info: Safety Relays Catalog Number 700-Z Product Data Contents This product data contains: Section Page Introduction 2 What is a Safety Relay? Positive–Guided Relays Redundant, Self–Monitoring Circuit Safety Relay Operating Principle 3 4 5 7 Safety Relay Benefits

smd glass zener diode color codes

Abstract: KA 511 common anode alphanumeric display 5252 F 1108 ANSI C78.377 2011 F1109 5252 F led D1060 F1060 TLOH16CP H1032
Contextual Info: 2011-3 PRODUCT GUIDE LED Lamps SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g High-Brightness LED Lamps Overview of Toshiba’s Visible LED Lamp Family 1. New Product Digest 1. 2. 3. 4. 5. High-Luminous-Flux White LED Lamps for General Lighting See-Through Type : TL19W01 Series . 4

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

Contextual Info: s e MIKROn V drm V rsm V rrm I r m s 1> Volw = 4 l/min, Tw = 40 °C, ED = 50 %, n = 10 V 1900 A 2400 A 1200 SKW 1200/12 SKW 1700/12 1400 SKW 1200/14 SKW 1700/14 1600 SKW 1200/16 SKW 1700/16 Symbol Conditions Irms1* Itsm Volw = 4 l/min, Tw = 40 °C, ED =100%

02L1

Abstract: capacitor .022 J 400 nec CCD LINEAR SENSOR 22-pin nec linear ccd sensor UPD3739
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT _ ¿ ¿ P D 3 7 3 9 5000 PIXELS CCD LINEAR IMAGE SENSOR The /xPD3739 is a CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal. The /¿PD3739 is a 2-output type CCD sensor with 2 rows of high-speed charge transfer register, which transfers

Contextual Info: mß/EREX KD221275A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DlISl D3 flinQtOfl Transistor Module 75 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

LT 220 diode

Contextual Info: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1

Contextual Info: High Frequency Ceramic Component Solutions 931 VIA ALONDRA, CAMARILLO, CALIFORNIA 93012 • TEL 805 389-1166 • FAX (805) 389-1821 2 www.johansontechnology.com Your Technology Partner With over 15 years of experience, Johanson Technology Incorporated can provide you

S5000

Abstract: V100 2SA1005
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD3739 5000 PIXELS CCD LINEAR IMAGE SENSOR The µPD3739 is a CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal. The µPD3739 is a 2-output type CCD sensor with 2 rows of high-speed charge transfer register, which transfers

2SA1005

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD3739 5000 PIXELS CCD LINEAR IMAGE SENSOR DESCRIPTION The μ PD3739 is a CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal. The μ PD3739 is a 2-output type CCD sensor with 2 rows of high-speed charge transfer register, which transfers the

S5000

Abstract: V100 t2411 CMOS AREA IMAGE SENSOR 22pin 2SA1005
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD3739 5000 PIXELS CCD LINEAR IMAGE SENSOR DESCRIPTION The μ PD3739 is a CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal. The μ PD3739 is a 2-output type CCD sensor with 2 rows of high-speed charge transfer register, which transfers the

direct rdram rambus 1200

Contextual Info: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

Contextual Info: H V53 H V54 32-Channel Serial To Parallel Converter With High Voltage Push-Pull Outputs Ordering Inform ation Package Options Device 44 J-Lead Quad Ceramic Chip Carrier 44 J-Lead Quad Plastic Chip Carrier 44 Lead Quad Plastic Gullwing Die 44 J-Lead Quad Ceramic Chip Carrier

KD502

Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
Contextual Info: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71

4-bit even parity checker circuit diagram

Abstract: circuit diagram of wireless door lock system ERC32 T10 206 00 TSC695F
Contextual Info: TSC695F Rad-Hard Rad-Hard 32-bit SPARC SPARC 32-bit Embedded Processor Processor Embedded Data Sheet Rev.E - 22 March, 2001 1 TSC695F Data Sheet Information Foreword Atmel Nantes S.A. reserves the right to make changes in the products or specifications contained in this document

Contextual Info: Features • Integer Unit Based on SPARC V7 High-performance RISC Architecture • Optimized Integrated 32/64-bit Floating-point Unit • On-chip Peripherals • • • • • • • • • • • – EDAC and Parity Generator and Checker – Memory Interface

7 bit hamming code

Abstract: TSC695FL ERC32 TSC695 TSC695FL PINS d2590
Contextual Info: Features • Integer Unit Based on SPARC V7 High-performance RISC Architecture • Optimized Integrated 32/64-bit Floating-point Unit • On-chip Peripherals • • • • • • • • • • • – EDAC and Parity Generator and Checker – Memory Interface