T3D 46 Search Results

lc 945 transistor

Abstract: transistor LC 945 2N3904 2N3904 F14 4102 transistor 2n3904 TRANSISTOR PNP transistor 4103
Contextual Info: ALLE&RO N I C R OSYSTEMS INC T3D » 0504330 0003733 0 • AL6R PROCESS TVO Process TVO NPN High-Speed Switching Transistor Process TVO is an NPN double-diffused silicon epitaxial planar device with gold diffusion. It is used as a general-purpose switch and amplifier. The PNP

Contextual Info: b5E D TOKO AMERICA/ SIGNAL SIGNAL PROCESSING TECHNOLOGIES flEMÖTl? DDÜB2SÖ T3D « S P T SPT78 I O 10-BIT, 20 MSPS, ECL OUTPUT A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Monolithic 20 MSPS Converter On-Chip Track/Hold

TY527

Abstract: panduit 22CC37 WIT-50 t3d 18 n 308 al T3D 6 TY35/535/5354 TYTO PLM-24
Contextual Info: CROSS REFERENCE BY SERIES CABLE TIES NTE 04-xx18 04-xx40 04-xx50 04-xx120 04-xx175 ACT AL-xx-18 AL-xx-40 AL-xx-50 AL-xx-120 AL-xx-175 Catamount L-xx-18 L-xx-30/-40 L-xx-50 L-xx-120 L-xx-175 GB 46-1 46-2 46-3 NA 46-4 Panduit PLTxM PLTxI PLTxS PLT2H/4H PLT6H

Contextual Info: CROSS REFERENCE BY SERIES CABLE TIES NTE 04-xx18 04-xx40 04-xx50 04-xx120 04-xx175 ACT AL-xx-18 AL-xx-40 AL-xx-50 AL-xx-120 AL-xx-175 Catamount L-xx-18 L-xx-30/-40 L-xx-50 L-xx-120 L-xx-175 GB 46-1 46-2 46-3 NA 46-4 Panduit PLTxM PLTxI PLTxS PLT2H/4H PLT6H

t3d 66

Abstract: T3D 64 737 s1g t3d 29 T3D 90
Contextual Info: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE

22810t

Abstract: 20ii2
Contextual Info: 13 10 12 M A TERIAL ENGINEERING NUMBER NUMBER wON TAPE S C - 2 2 6 -04 9 1 6 4 0 9 3 6 ENGINEERING NUMBER ON TAPE S C -2 2 8 -0 4 T STUD S IZ E «4 .126/3.20 .39/9.9 t j [ .469/11.91~ 1.39/35.1 I9 I6 4 0 0 6 I S C - 2 2 8 -0 6 ^ §9 1 6 4 0 9 3 7 S C -2 2 8 -0 6 T

t3d diode

Abstract: KAI-2093M KAI-2093 T3D 55 diode marking t3d T3D 01 DIODE T3D 28 T3D 17 diode
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0307 March 19, 2007 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

T3D 36 diode

Abstract: T3D+36+diode
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD COLOR IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

DIODE T3D 95

Abstract: t3d diode T3D 34 diode kai-2093cm T3D 01 DIODE T3D 28 DIODE 360NM diode marking code t3d kai image sensor diode marking t3d
Contextual Info: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JULY 13, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5

T3D DIODE

Abstract: T3D DIODE clamp diode T3D KAI-2093 kai-2093cm Diode T3D 44 T3D 34 Kodak KAI 2000 T3D 55 diode Diode T3D 55
Contextual Info: DEVICE PERFORMANCE SPECIFICATION Revision 4.0 MTD/PS-0307 June 11, 2010 KODAK KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR TABLE OF CONTENTS Summary Specification . 4

Contextual Info: DISC CERAMIC CAPACITORS TU SO N IX S T Y LE N U M B ER M A X IM U M D IA M E T E R D L E A D S P A C IN G (S) W IR E G A U G E (A W G ) TEMP. CHAR. CODE N T E 5. (% ) MIN TC TOL 858 878 818 848 828 3848 3858 3878 3888 .4 5 7 / 11.61 .5 1 0 / 1 2 .9 5 .6 1 3 / 1 5 .5 7

Contextual Info: KAI-2093 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR JUNE 11, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0026 KAI-2093 Image Sensor TABLE OF CONTENTS Summary Specification . 5

T3D 46 diode

Abstract: Diode T3D 56 T3D 65 diode Diode T3D 08 Diode T3D 38 T3D 49 diode t3d 56
Contextual Info: SIEMENS BYP 300 Preliminary data FRED Diode • Fast recovery epitaxial diode • Soft recovery characteristics Type Vrrm ^FRMS irr Package Ordering Code BYP 300 1200V 6.5A 55ns TO-218AD C67047-A2250-A2 Maximum Ratings Parameter Symbol Mean forward current

Contextual Info: TUSONIS TUSONIX STYLE NUMBER 865 835 M A X I M U M D I A M E T E R D . 225 / 5.71 2 7 5 /6 9 9 .3 4 4 /8 L E A D S P A C I N G (S) 2 00 / 5.08 2 50 / 6.35 22 22 W IR E G A U G E (A W G ) N T E TEM P. CHAR. CODE Z5 D Y5E X5F X7F M IN CAP TO L (%) M IN TC

Contextual Info: vm . V C O -202 Voltage Controlled Oscillator 2 5 -50 MHz GUARANTEED MINIMUM PERFORMANCE DATA 50 ohm System DESCRIPTION The VCO-202 Voltage Controlled Oscillator* combines film circuit technology with a custom, stable High-Q varactor design. A unique, low-noise bipolar transistor and a proprietary

bc257b

Contextual Info: SPRAGUE/SENICOND I 8514019 GR O U P T3 SPRAGUE, D • 0513050 G0D3ST=] 1 ■ S E M I C O N D S / ICS 0 3 5 9 9 3> 93D PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C - Max. ^ BR CBO ^(BR)CEO V(BR)EBO

Contextual Info: 500 VOLT TUSONIX 801 M A X IM U M D IA M E T E R D 235/596 290/737 360/9 14 437/12 45 490/12 45 593/15 06 675/17 15 750/1905 800/2032 857/22 23 937/23 80 1 100/27 94 L E A D S P A C IN G (S ) 200/508 250/635 250/635 250/6 35 250/6 35 375/9 52 375/9 52 375/952

T3D 53

Abstract: t3d 54 T3D 38 fl03
Contextual Info: HN29W3221 Series Preliminary Product Preview 4M word x 8-bit CMOS AND Flash Memory HITACHI The Hitachi HN29W 3221 is a 4M word x 8-bit C M O S Flash Memory, realizing on-board programming. It programs or erases data with only on-board power supply 3.3V V c c supply . It dose

Contextual Info: TUSONIX CAPACITORS 200 Vdc or Less D?SCCERAMlfc TUSONIX STYLE NUMBER 865 835 805 855 875 815 845 825 M A X IM U M D IA M E T E R D . 2 2 5 /5 7 1 .2 7 5 /6 .9 9 . 3 4 4 /0 7 4 4 2 0 /1 0 6 7 .4 7 5 /1 2 0 7 .5 7 5 /1 4 . 8 1 . 6 5 5 /1 6 . 6 4 . 7 2 0 /1 8 2 9

Contextual Info: SPRAGUE/SEMICOND GROUP 8 5 1 4 0 1 9 S P R A GU E. ^3 Ô513S5G Û0D3S77 2 D S E M I C O N D S / ICS 93 D 03 577 If^ T-âl-îo BIPOLAR TRANSISTOR CHIPS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type fT 500

Contextual Info: W ie tm v i V 1 U a W ill A DISC CERAMIC CAPACITORS TUSONIX STYLE NUMBER 861 831 801 M A X IM U M 2 3 5 / 5.96 2 9 0 /7 37 .3 6 0 / 9.14 2 0 0 /5 00 . 2 50 /6 2 5 0 /6 35 . 250 / 6.35 250 / 6 . : 5 . 3 75 / 9.52 22 22 22 22 D IA M E T E R D L E A D S P A C IN G (S)

Contextual Info: S P RAG UE /S EM IC ON D GROUP =13 8 5 1 40 19 SPRAGUE. ÔS13ÔSD D DOOBSTB S E M I C O N D S / ICS Q 93D 03593 J /7~ T - 3 - 1 - ¿io PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C *CBO Device

T3D 34

Abstract: T3D 67 T3D 87 t3d 99 T3D 79 t3d 96 T3D 64 T3D 63 Tusonix u1g 007
Contextual Info: DISC CERAMIC CAPACITORS TUSONIX Ceramic capacitors, because of their inherent reliability, small size, low cost and wide choice of elec­ trical characteristics available, now outsell all other types combined. TUSONIX manufactures both fixed and variable ceramic capacitors in

08T01

Contextual Info: C02E9.pdf 02.4.27 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage storageand andoperating, operating,rating, rating,soldering solderingand andmounting, mounting,handling handling)ininthis thisPDF