T3D 65 Search Results

1N914

Contextual Info: T3D J> • ALLEGRO MICROSYSTEMS INC D50433fl 00037^5 0 ■ ALGR PROCESS TTU Process TTU High-Speed Switching Diode A gold-doped silicon epitaxial diode used primarily in high-speed switching applications, Process TTU, with its P-type substrate, is the N P counterpart of PN

t3d 57

Abstract: T3D 88 t3d diode T3D 89 Diode T3D 57 GC5510 gc5514g paramp T3D 45 diode GC5511A
Contextual Info: LO RA L niCROülAVE-FSI SIE D • 5 5 0 0 1 3 0 G O O G M ? ! T3D ■ GaAs PARAMETRIC AM PLIFIER VARACTORS DESCRIPTION FEATURES The GC5510 series paramp varactors are diffused junction gal­ lium arsenide devices featuring the lowest series resistance and

Contextual Info: b5E D TOKO AMERICA/ SIGNAL SIGNAL PROCESSING TECHNOLOGIES flEMÖTl? DDÜB2SÖ T3D « S P T SPT78 I O 10-BIT, 20 MSPS, ECL OUTPUT A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • Monolithic 20 MSPS Converter On-Chip Track/Hold

parity check mark space

Abstract: 65SC51 T3D 62 G65SC51 G65SC51-1 G65SC51-2 G65SC51-3 G65SC51-4
Contextual Info: C U D / S E M I C O N D U C T O R DIV SSE D • lfl31b4D Ü G Ü 1 7 D 3 T3D * C A L T- 75-37-OS A G65SC51 CMD Microcircuits CMOS Asynchronous Communications Interface Adapter Features General Description • CMOS process technology for low power consumption

t3d 66

Abstract: T3D 22, ts 3110 TRANSISTOR T3D 55 T3D 85 T3d 22 T3D 65 T3D 45 t3d 18 2N3906
Contextual Info: A L L E GR O M I C R O S Y S T E M S INC T3D D • 0 S Q 4 3 3 A D D D 3 7 1 7 2 ■ ALGR PROCESS SMN Process SMN PNP High-Speed Switching Transistor Process SM N is a P N P double-diffused silicon epi­ taxial planar transistor with gold diffusion. It is pri­

LTN243R-10

Abstract: LXL242-G DDS7153 LTN243F-10 LTN243R-50 Philips LCD circuit TI SR 51 2 DISPLAY LTN243 LCD Display 40 pin
Contextual Info: PHILIPS INTERNATIONAL bDE D • 7110flBb DD57152 T3D IPH IN P h ilip s C o m p o n e n ts LTN243 D a ta s h e e t s ta tu s P ro d u c t s p e c ific a tio n d a te of iss u e July 1990 Liquid crystal display M ODULE DESCRIPTION Q UICK REFERENCE DATA O utline dim ensions

Contextual Info: TUSONIX TUSONIX STYLE NUMBER 865 835 805 855 875 815 845 825 M A X IM U M D IA M E T E R D 225/571 275/6 99 344/8 74 420/10 67 475/12.07 .575/1481 .655/16 64 720/18 29 L E A D S P A C IN G (S ) 200/508 250/635 .250/6.35 250/635 250/6.35 375/952 375/9.52

t3d 66

Abstract: T3D 64 737 s1g t3d 29 T3D 90
Contextual Info: DISC CERAMIC CAPACITORS T U S O N IX S T Y L E N U M B E R M A X I M U M D IA M E T E R D L E A D S P A C IN G (S ) W IR E G A U G E (A W G ) T E M P E R A T U R E C O M P E N S A T IN G E X T E N D E D T E M P E R A T U R E C O M P E N S A T IN G G EN ERAL PU RPO SE

T3D 54 DIODE

Abstract: Diode T3D 54 T3D 81 DIODE T3D DIODE T3D 83 DIODE diode T3D 25 Diode T3D 41 CIRCUIT T3D 28 diode MG300M1UK1 T3D 18 diode
Contextual Info: WEST CODE S EMI C OND U CT O RS WESTCODE TRANSISTOR MODULES are designed for use in various types of motor control and other high power switching applications and consist of insulated type DARLINGTON TRANSISTORS. The electrodes are fully isolated from heat sink. Single

T3D 90

Abstract: marking abF t3d 2d Marking 3D TO-236AB TMPT4402 TMPTA70 TMPTA63 0/t3d 2d
Contextual Info: SPRAGUE/SEMICOND 8514 0 19 SPRAGUE. 13 GR OU P 6513650 S E M I C O N D S /ICS 0003L06 1 93D 03608 i> T '9.7-10 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain IcBO 25 25 60 90 40 40 30 25 40 40 50

Contextual Info: DISC CERAMIC CAPACITORS TU SO N IX S T Y LE N U M B ER M A X IM U M D IA M E T E R D L E A D S P A C IN G (S) W IR E G A U G E (A W G ) TEMP. CHAR. CODE N T E 5. (% ) MIN TC TOL 858 878 818 848 828 3848 3858 3878 3888 .4 5 7 / 11.61 .5 1 0 / 1 2 .9 5 .6 1 3 / 1 5 .5 7

Diode T3D 82

Abstract: T3D DIODE Diode T3D 08 Diode T3D 26 T3D 65 diode T3D 82 diode Diode T3D 27 diode T3D 24 T3D 82 T3D 28 DIODE
Contextual Info: MF7643 4-Channel High-Speed Non-Inverting 15 M H z Input Bandwidth 8-Bit DACs with Outpul EJuffers and Parallel Digi :al Data Port M M icro Power System s FEATURES • DACs Matched to ±0.5% typ • Low Harmonic Distortion: 0.25% ypical with VREF = 1 V p - p 0 1 MHz

t3d 18

Contextual Info: HIGH VOLTAGE RECTIFIERS 200nS RECOVERY M30FG M40FG M50FG AXIAL LEADED HERMETICALLY SEALED V,RWM 3 0 0 0 -5000V 50mA 200nS RR in. mm .300(7.62) Max. 1.00(25.4) Min. Q .130(3.3)-! Max •020±.003 (.50±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS MAX. WORKING REVERSE VOLTAGE

2sd1047 equivalent

Abstract: 2sb817 equivalent T3D 59 T3D 90 STK3042 stk3062 Sanyo STK 2SB631 T3D 47 STK3102
Contextual Info: SANYO SEMICONDUCTOR CORP b3E D m 7 tlci707b OOllltH GTH TSAJ S T K Audio Power Amplifier STK3042 IH Series ★ 2 c h . / 1 package, ± Power Supply ★ V o l t a g e Amp I if ier ★ T H D = 0. 005% Maximum Ratings Recommended Operating Conditions m Mode 1

Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 0 19 SPRAGUE. T3 D • 0513050 ÜDQ3blô 1 ■ S E M I C O N D S / ICS 9 3 D 036 18j> " 0 I " ^ DIODE CHIPS ‘THD’ Rectifiers and General-Purpose Diodes ELECTRICAL CHARACTERISTICS atTA = 25°C vF Device Type THD457 THD458A

TP4119

Abstract: 2n3819 field-effect transistors nj132 TP3823 TP3370 TP4392 2N3819 NJ16 NJ32 TP3369
Contextual Info: 6513650 S PR AG UE /SE NICOND GROUP 8 5 1 4 0 1 9 S P RA GU E, SEMICONDS/ICS 0003b00 4 93 D 03600] 7"- PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH) V(flR)GSS Limits Igss Max. (nA) Device Tin*

T3D 1N

Abstract: marking 1FF tmpt3904 TMPT2222 SPRAGUE
Contextual Info: SPRAGUE/SEMICOND GROUP 85 14 01 9 SPRAGUE. T3 D • S E M I C O N D S / ICS flS13flS0 0003^0^ S ■ 9 3 D 0 3 6 0 6 J , SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS a tT A = 25°C DC Current Gain IcBO TMPT5550 TMPT5551 TMPT6427

T3D DIODE

Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
Contextual Info: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are

THJU401

Abstract: THJJ300B
Contextual Info: " S P R AG UE /S EM IC ON D GROUP 13 D • 6513350 0003562 b ■ 93D 03582 TTF-ZV-ZS 8 5 1 4 0 1 9 SPRAGUE . S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al Tfl = 25°C VGS ofl V(BR]GSS Limits Igss

Contextual Info: 500 VOLT TUSONIX 801 M A X IM U M D IA M E T E R D 235/596 290/737 360/9 14 437/12 45 490/12 45 593/15 06 675/17 15 750/1905 800/2032 857/22 23 937/23 80 1 100/27 94 L E A D S P A C IN G (S ) 200/508 250/635 250/635 250/6 35 250/6 35 375/9 52 375/9 52 375/952

Contextual Info: EPSON PF973-01 SEDI 575 Dot Matrix LCD Driver • OVERVIEW The S E D I 575 series is a single-chip LCD driver for dot-matrix LCDs that can be connected directly to a MPU bus. It accepts 8-bit parallel or serial display data from a MPU, stores it in an on-chip display data RAM =

OPF300

Abstract: LW khz receiver OPF500 OPF510 QPF500 QPF510 850 nm LED
Contextual Info: OPTEK Product Bulletin OPF500 February 1996 M i ^7^0500 0D0EÔ2G Obô H 200kbps Fiber Optic Receiver Type OPF5QO, OPF51Q Series Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Interfaces with all logic circuits • Two output options

Contextual Info: N AMER P H I L I P S / D I S C R E T E b'lE D bb 5 3^ 31 □D3fi3fl? SOT H A P X Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in

2N5832

Contextual Info: 8 5 1 4 0 1 9 SPR A G U E. Û513Ô5Ü •=13 SP RA GU E/SEN IC OND GROUP OGOBSfl^ SEM IC O N D S/ IC S T 93D 0 3 5 8 9 D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain