T3T75 Search Results

Not3

Contextual Info: riOTOROLA SC -CHEMORY/ASI M b5E » • t3t75Sl 003^242 07S ■ M O TO R O LA 8S256 Advance Information 256K x 8 CMOS SRAM Multichip Module Commercial Plus and Mil/Aero Applications ELECTRICALLY TESTED PER: MPG8S256 The Motorola 8S256 is a CMOS SRAM housed in a hermetically sealed

sd 1609

Contextual Info: 3 mm r- 5 2 9 2 2 - 1600 S tS W tfS m LO 1Q B S T A C K IN G H E IG H T TO BE M ATED W ITH 0 .6 3 5 P IT C H a • C\l a H I s ip lA J U U T " ““ ““ IM J U lM J U lllk jlJ U lllJ lM ““ " M 0 .9 8 . J U lA c» LD ro - L , 1 ‘ ; T i y n u ü _

motorola ZENER diode marking code

Contextual Info: M O T OR OLA SC IME D | b3fc725S G o a o t m DI ODE S/ OP TO 5 I Order this data sheet by 3EZ3.9D5/D MOTOROLA SEM ICONDUCTOR T-ÍI-J5" TECHNICAL DATA 3EZ3.9D 5 thru Designer's Data Sheet 3EZ400D 5 3-Watt Surm etic 30 Silico n Zener Diodes 3-WATT ZENER REGULATOR

mcm91000as

Abstract: 91000LH70 mcm91000s
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 1M x 9 Bit Dynamic Random Access Memory Module The MCM91000 is a 9M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory mod­ ule (SIMM) or 30-pin single-in-line package (SIP) consisting of nine MCM511000A

Contextual Info: MOTORCLA SC XSTRS/R F MOTOROLA 12E O | t.3b7BSt OOttlfllS 1 | r.3i./s _ SEMICONDUCTOR TECHNICAL DATA 40 A M P E R E S SWITCHMODE* S E R IE S NPN SILICON POWER TRAN SISTOR NPN SILICON POWER M ETA L TRANSISTOR . designed for high speed, high current, high power and'low cost

2N6837

Abstract: Motorola 3-252 to-3 Motorola Transistor 3-252 100-C 470D motorola 3-251
Contextual Info: MOTOROLA SC XSTRS/R 12E D I F b3b ?a S 4 aQflMb^b b I T - - 3 3 -JS MOTOROLA SEMICONDUCTOR 2N6837 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 20 A M PER E NPN SILICON POWER TRANSISTORS S W IT C H M O D E III S E R IE S U L T R A -F A S T N P N S IL IC O N P O W E R T R A N S IS T O R S