T4 SM DIODE Search Results

diode MARKING CODE A9

Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Contextual Info: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"

lts 542

Abstract: 1N5B21 FDC37C662 SD14 SMC34C60 QIC-80 piezo driver 1N5B21-1-3
Contextual Info: SM C34C60 SMC PRELIMINARY STANDARD MICROSYSTEMS CORPORATION Parallel Port Interface Chip - Peripheral Side FEATURES Creates PC/AT-Style Bus from Parallel Printer Port Signals Single Chip Interface to Any Bus Capable Peripheral Supports Standard, Bi-Directional, EPP,

Contextual Info: Application Note 1717 ISL6726EVAL2Z: 24V to 12V 90W Active Clamp Forward DC/DC Converter Introduction Design Specifications The board is a 24V input to 12V output DC/DC converter that can output current up to 7.5A. It is implemented with Intersil’s Active Clamp Forward ACF current-mode PWM controller,

1sr154-100

Abstract: SR154
Contextual Info: 1SR154-100/1SR154-200/1SR154-400 — K /D iodes 1SR15 4 -1 0 0 /1 SR154-200 1SR154-400 ->' a > # * » & » » * if-f * - K Silicon Diffused Junction Rectifying Diodes • irffi \ns[2]/Dimensions Unit : mm) • (P S M )» 2) • Features 1) Sm all surface mount type (PSM ).

RX-2C G

Abstract: marking code rie sot23 em 2860 k2915 MARKING JW SOT-23
Contextual Info: What H E W LET T 1"KM PA C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series F eatures • S urface M ount SOT-23/ SOT-143 P ackage • High D e te c tio n S en sitivity: Description HSMS-2860 Package Lead Code

1s1555 diode

Abstract: silicon diode 151555 1s1555 silicon diode 1S1555 1s1554 diode 1S1554 1S1553/1S1555
Contextual Info: TOSHIBA W? {DISCRETE/OPTO} 9097250 TOSHIBA DeT| TDT?2SG 0 0 0 ^ 7 D I S C R E T E / O P T O _^ 67C 09297 3 | D. / - Silicon Epitaxial "Planar Type 1S1553-1S1555 Diode Unit in tran GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES:

SHINDENGEN DIODE

Contextual Info: y a I" — y K Schottky Barrier Diode Axial Diode OUTLINE DIMENSIONS S2S6M 60V 2A « • T Ì1 5 0 T ; •PnnsM 7 i 7 > i / i S S ! • 1 O 0 U -K ffl j * •S R S S •D c /D c n y i { — 9 •*S . f — Lx, O A » S •a«. RATINGS Absolute Maximum Ratings

SOT23 6pin MARKING 3F

Abstract: marking 3f 6pin MBR7535 MBR7545
Contextual Info: MBR7535 MBR7545 MOTOROLA SEMICONDUCTOR TECHNICAL DATA M B R 75 45 is a M o to rola P referre d D e v ice Switchmode Power Rectifiers S C H O T T K Y B A R R IE R R EC TIFIER S . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

Contextual Info: SCHOTTKY BARRIER DIODE KCQ20A03L 2o a / s o v FEATURES o S im ilar to TO-247AC TO-3P Case ODual Diodes - C athode Common o Low F orw ard V oltage Drop o L o w Pow er Loss, High Efficiency o H igh Surge C apability m 'X' -1. D im e s n io n s i n mm ( In c h e s )

Contextual Info: VUB 116-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 116 A VF = 2.76 V IF SM = 700 A IF SM = 200 A IGBT V C E S= 1200 V I C 8 0 VC

MARKING 330D

Abstract: BD330DW 330D marking iP sot363
Contextual Info: MOTOROLA Order this document by MBD110DWT1/D SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT-363 package is a solution which simplifies

VUB145-16NOXT

Contextual Info: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC

bgy 53

Contextual Info: SMCJ5.0 thru SMCJ170CA 1500 Watt Surface Mount TVS TEL: 805-498-2111 DESCRIPTION FEATURES: The SMCJ series of transient voltage suppressors are designed to protect components from transient voltages caused by lightning, electrostatic discharge ESD , electrical fast transients (EFT), inductive load

mmsz5v1t1

Abstract: marking T1 zener u5 MMSZ4702T1
Contextual Info: SOD-123 DEVICES continued Zener Diodes (continued) Cathode = Notch (Vp = 0.9 V Max. @ lF = 10 mA for all types) continued ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted«24», (VF = 0.9 V Max. @ lF = 10 mA for all types) Max Reverse Leakage

DIODE smd marking uh

Abstract: SMD MARKING XL Diode marking m7 smd m7 smd xl MARKING SMD xl 501Z
Contextual Info: Schottky Barrier Diode Twin Diode m tm m o u tlin e Package : E-pack DE5SC4M Unit I mm Weight 0.326k T yp 40V 5A Feature • SM D • SMD • PRRSMÿ7/ 'C 5 > î/ x < S lI • P brsm Rating 1 High lo Rating-Small-PKG i . V . f'.t f t iJ T yp«* N I ol 5S C4

P8208T

Abstract: PA0801 fzt853 MLPQ-12 SC1301A SC431 SC4431 SC4806 SC4806MLTRT sot23-5pin
Contextual Info: SC4806 Multiple Function Double Ended PWM Controller POWER MANAGEMENT Description Features The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains

R1206

Abstract: PA0801 P8208T gate pulse transformer pa0264 pa0810 fzt853 pe 68386 R20 marking 22N55 SC1301A
Contextual Info: SC4806 Multiple Function Double Ended PWM Controller POWER MANAGEMENT Description Features The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains

pa0810

Abstract: capacitor 2.2n 0805 1 fzt853 sot23_bec PA0801 C31 MARKING CODE SO8 do213AC P8208T MLPQ-12 SC431
Contextual Info: SC4806 Multiple Function Double Ended PWM Controller POWER MANAGEMENT Description Features The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains

ixys ml 075

Abstract: 50N60A
Contextual Info: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES

1SS133

Contextual Info: K /D io d es 1SS130/1SS131 /1SS132 /1SS133/1SS134 1SS130/1SS131/1SS132 1SS133/ 1SS134 y U □ > l v 7 f K Silicon Epitaxial Planar High-Speed Switching Diodes • W KTfSIH /Dim ensions Unit : mm 1) S / J 'S » T * S o 2) M i t m & T & Z ' . 3) itS lJ t (trr=2ns Typ.) ? & 5 o

Contextual Info: SGS-THOMSON 1 M M Ü (^ L6213 SOLENOID DRIVER + SWITCH MODE POWER SUPPLY ADVANCE DATA . • ■ ■ . O PERATING SUPPLY VOLTAGE UP TO 46V 1A POWER SUPPLY (5V 5A SO LENOID DRIVER PRECISE ON CHIP REFERENCE VOLTAGE DISCONTINUO US MODE - FREQUENCY VARIABLE

Contextual Info: TP802C0400A -4 K SCHOTTKY BARRIER DIODE Features • te V F Low VF Super high speed sw itch in g . • w a f t «14 Connection Diagram High reliability by planer design ' Applications High speed p ow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings

LIF 10R

Contextual Info: SIL31 R ( 2 5 o a ) • : Outline Drawings Units mm GEIMERAL-USE RECTIFIER DIODE I Features High reverse voltage capability • Stud mounted Z.M : Applications • ',<‘y r ‘lJ “ ? E ® S Battery chargers • 7 7 -> u x m m m Brush-less generators

Contextual Info: DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 K /D iod es DAN401 /DAN601 /DAN801 /DAN803/DAN403 DAP401 /DAP601 /DAP801 /DAP803 v V =i > 1 $ 3- V T ; u7 °U - j- M M & JS* < "J 3- > ? 2 '< * - KT7 K Silicon Epitaxial Planar Ultra-High Speed Switching Diode Arrays