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    T431616B Search Results

    T431616B Datasheets (6)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    T431616B
    		Taiwan Memory Technology 1M x 16 SDRAM Original PDF 575.16KB 31
    T431616B-10C
    		Taiwan Memory Technology 1M x 16 SDRAM 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF 575.18KB 31
    T431616B-10S
    		Taiwan Memory Technology 1M x 16 SDRAM 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF 576.78KB 31
    T431616B-10S
    		Taiwan Memory Technology 1M x 16 SDRAM 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF 575.18KB 31
    T431616B-20C
    		Taiwan Memory Technology 1M x 16 SDRAM 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF 575.18KB 31
    T431616B-20S
    		Taiwan Memory Technology 1M x 16 SDRAM 512K x 16-Bit x 2Banks Synchronous DRAM Original PDF 575.18KB 31

    T431616B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T431616B

    Abstract: T431616B-10C T431616B-10S T431616B-20C T431616B-20S
    Contextual Info: tm TE CH T431616B 1M x 16 SDRAM SDRAM 512K x 16bit x 2Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION • • • • • • • • • • +2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge


    Original     		T431616B 16bit T431616B T431616B-10C T431616B-10S T431616B-20C T431616B-20S PDF

    T431616B

    Abstract: T431616B-10C T431616B-10S T431616B-20C T431616B-20S
    Contextual Info: tm TE CH Preliminary T431616B 1M x 16 SDRAM SDRAM 512K x 16bit x 2Banks Synchronous DRAM FEATURES GRNERAL DESCRIPTION • • • • • • • • • • +2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge


    Original     		T431616B 16bit T431616B T431616B-10C T431616B-10S T431616B-20C T431616B-20S PDF