T44 DIODE Search Results

Contextual Info: N AUER PHILT^S/B IS CRETE b'lE T> • bb53R31 0030646 T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

BUK582-100A

Contextual Info: N AUER p HT/l IPS/EISCRETE b'iE ]> • 1^53^31 ÜD3DÛ4Ô T44 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode

1N4565

Abstract: IN4568 1n4573 45B4 IN4583A 1n4572 4566A
Contextual Info: SbE ] • 7 T ST E3 7 0 0 4 1 5 3 4 T44 ■ SGTH s 6 s-thohson S G S -T H O M S O N 1 N 4 5 6 5 ,A -> 1 N 4 5 8 4 ,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON ■ TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values)

VHE1404

Abstract: VHE1402 DDD135D VHE1401 VHE1403
Contextual Info: V SbE J> m m C R O S E M I CORP/ MICRO bllSTD? 000134*1 T44 •MfiL MICRO QUALITY / S E M IC O N D U C TO R . INC 10 Amp Epitaxial High Efficiency Rectifiers 50 Volt, 100 Volt, 150 Volt and 200 Volt VRRM Low Thermal Resistance Extremely Low Leakage at High Temperature

ALP202

Abstract: NLT4532 4433619 crystal Outline T44 LV4124W NLT4532-S4R4 T44 diode
Contextual Info: Ordering number : EN6000 Monolithic Linear IC LV4124W Single-chip LCD panel driver IC Supports the ALP202 LCD panel Overview Package Dimensions The LV4124W is a LCD panel driver for use in lowtemperature polysilicon TFT LCDs that integrates an RGB decoder, a driver, and a timing controller in a single chip.

ALP304

Abstract: ALP202 ALP208 ALP210 NLT4532 sanyo lcd alp208 EN6001 ALP30 AL-P21 NLT4532-S3R6B
Contextual Info: Ordering number : EN6001 Monolithic Linear IC LV4126W Single-chip LCD panel driver IC Supports the ALP202 /304LCD panel Overview Package Dimensions The LV4126W is a LCD panel driver for use in lowtemperature polysilicon TFT LCDs that integrates an RGB decoder, a driver, and a timing controller in a single chip.

Contextual Info: SCHOTTKY BARRIER DIODE EC10QS05 EC10QS06 1.1A/50~60V FEATURES o Miniature Size, Surface Mount Device 2.21087 1.8 .071) 5.31209) 4.7(.185) ° Low Forward Voltage Drop _ 4.7(.168)_ >(.169) ° Low Power Loss, High Efficiency , 0.2(.008) " 1 j“ 0.0(.000) d,-1

RLD-78M35

Contextual Info: AIGaAs double-hetero visible laser diodes RLD-78M35 RLD-78P35 RLD-78N35 These were the world’s first mass-produced laser diodes that were manufactured by molecular beam epitaxy and introduced with the RLD-78MA and RLD-78PA laser diodes. These diodes were especially developed for products

OLD2202

Abstract: 1000 nm light emitting diode 910nm 5424D
Contextual Info: O K I electronic components OLP22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION TheOLD2202 is a superhigh-output GaAIAs infrared light emission diode sealed with an achromatic transparent epoxy resin. Its light emission wave peaks at 910 nm. The OLD2202 can be the most

Contextual Info: FAST RECOVERY DIODE 30A/400V/trr:60nsec KSF30A40B FEATURES o Similar to T0-220AC Case o Ultra-Fast Recovery oLow Forward Voltage Drop O Low Power Loss, High Efficiency o High Surge Capability 5.47 .2I5> 5.43(2131 KSF30A.B D im esn io n s i n mm ( I n c h e s

TAM25

Contextual Info: N-CHANNELIGBT WITH INTEGRAL DIODE Z C N 9150A DRAFT DATASHEET ISSUE A - DECEMBER 94 FEATURES * 500 Volt VDS * Integral Diode * Fast Switching APPLICATIONS * Compact Fluorescent Ballast ABSOLUTE MAXIMUM RATINGS at Tam^25°C unless otherwise slated PARAMETER

VTR17D1

Contextual Info: Reflective Optoswitch VTR17D1, 17E1 Arrow Retro with Flying Leads PRODUCT DESCRIPTION This series of reflective optical switches com­ bines an infrared emitting diode IRED with an NPN phototransistor (VTR17D 1) or photodarlington (VTR 17E1) in a one piece, sealed, IR

BAV21

Contextual Info: • bb53131 0[]2b30D ODfl HIAPX N AMER PHILIPS/DISCRETE b'lE 3> BAV18 to 21 J V GENERAL PURPOSE DIODES Silicon planar epitaxial diodes in DO-35 envelopes; intended for switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.

b427525

Abstract: nec ir receiver P1026
Contextual Info: DATA SHEET RECEIVER NDL5590P Series 150 fi m InGaAs AVALANCHE PHOTO DIODE WITH MULTIMODE FIBER INTERNAL PRE-AMPLIFIER DESCRIPTION NDL5590P Series is an InGaAs avalanche photo diode module with multimode fiber incorporating silicon pre­ amplifier 1C. It is designed as an optical receiver for fiber optic communications systems such as SDH, SONET,

rhu 222

Abstract: 39300 2.5 m 34300 LA-3000 LA-3630 LA-3930 LA-73
Contextual Info: • 0008045 OOfi ■ R H M -f ^ — K /Lig ht Emitting Diodes LA -3000 Series LA-3000 Series High-Efficiency Numeric Displays i W i ^ ¿ É lU / D im e n s io n s U n it : m m G aP f f f l u t , 7.5m m , 1 ffiCO LED S S ^ ^ S T ' f o Th ese 1-digit LED num eric d isplays

Contextual Info: HARRIS SENICON] SECTOR CIS Ha r r is W SEMICONDUCTOR b6E D • M3Q2S71 Q05025H 413 « H A S HGTP6N40E1D HGTP6N50E1D 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Packages Features JEDEC TO-220AB TOP VIEW • 6 Amp, 400 and 500 Volt

35VW

Contextual Info: • 7AZAW OOOflOl? ■RHM K / L ig h t Emitting Diodes SLT-35 = S erie s SLT-35 Series J f¿ 7 > y 3 X 4 .5 m m Triangular Lamps 1 L E D 5J « y 0 / D im e n s io n s (U n it: mm) S L T - 3 5 v U —X t t , f l i t * t ^ t C G a P | g 3 X 4 . 5 m m O ~ ^ j2 H ^

Philips FA 261

Abstract: BAV18 BAV21 CECC BAV19 BAV20 BAV21
Contextual Info: •I bbS3^31 □□2t.3DD OOfl HIAPX _ _ N ÀMER PHILIPS/DISCRETE b=!E » _ _ _ _ _ _ _ _ _ BAV18 to 21 A_ _ _ _ _ _ GENERAL PURPOSE DIODES Silicon planar epitaxial diodes in DO-35 envelopes; intended for switching and general purposes In industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.

IXGH32N60AU1

Contextual Info: HiPerFAST IGBT with Diode IXGH 32N60AU1 IXGH 32N60AU1S vCES ^C25 v CE sat Combi Pack t Symbol Test C onditions V yces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RQE= 1 MQ 600 V VGES Continuous ±20 V V GEM Transient ±30 V ^C25 Tc = 25°C ^C90

P77 transistor

Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry

MC1648

Abstract: BR504 MV1401 MC12012 MV1404 MC12148 MV2106 MV2115 variable inductor values for 10MHz- 100MHz oscillator Transistor t30 motorola
Contextual Info: MOTOROLA Consider MC12148 for New Designs LIFETIME BUY The MC1648 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). For Maximum Performance QL ≥ 100 at Frequency of Operation. A varactor diode may be incorporated into the tank circuit to provide a

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors PNP Silicon MPSÄ75 MPSA77 COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Symbol Rating Collector-Emitter Voltage VCES Em itter-Base Voltage MPSA7S MPSA77 Unit -40 -60 Vdc Vebo -10 Vdc Collector Current — Continuous

2N3904 TRANSISTOR using darlington amplifier

Abstract: tuned amplifier ML1490 T376 mc1490 ML1350 2N3904 2N3906 MC1490P ML1490PP
Contextual Info: ML1490 RF/IF/Audio Amplifier Wideband Amplifier With AGC Legacy Device: Motorola MC1490 The ML1490 is an integrated circuit featuring wide–range AGC for use in RF/IF amplifiers and audio amplifiers. 8 • High Power Gain: 50 dB Typ at 10 MHz 45 dB Typ at 60 MHz

910kHz

Abstract: MC1490P ML1490 ML1350 2N3904 2N3906 MC1490 ML1490PP MC14-9
Contextual Info: ML1490 RF/IF/Audio Amplifier Wideband Amplifier With AGC Legacy Device: Motorola MC1490 The ML1490 is an integrated circuit featuring wide–range AGC for use in RF/IF amplifiers and audio amplifiers. 8 • High Power Gain: 50 dB Typ at 10 MHz 45 dB Typ at 60 MHz