T88 MARKING Search Results

T88-A150XSMD

Contextual Info: Surge Arrester 3-Electrode-Arrester T88-A150XSMD Ordering code: B88069X9840T302 DC spark-over voltage 1 2) 4) 150 ± 20 V % < 450 < 400 V V < 550 < 500 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)

T88-A350XSMD

Contextual Info: Surge Arrester 3-Electrode-Arrester T88-A350XSMD Ordering code: B88069X8420T302 DC spark-over voltage 1 2) 4) 350 ± 20 V % < 750 < 600 V V < 900 < 800 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)

B88069X8330T302

Abstract: T88-A90XSMD
Contextual Info: Surge Arrester 3-Electrode-Arrester T88-A90XSMD Ordering code: B88069X8330T302 DC spark-over voltage 1 2) 4) 90 ± 20 V % < 400 < 300 V V < 550 < 450 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)

T88-A230XSMD

Contextual Info: Surge Arrester 3-Electrode-Arrester T88-A230XSMD Ordering code: B88069X9920T302 DC spark-over voltage 1 2) 4) 230 ± 20 V % < 450 < 400 V V < 650 < 600 V V Nominal impulse discharge current wave 8/20 µs) 5) Single impulse discharge current (wave 8/20 µs) 5)

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

NE85633

Abstract: NE02133 NE68033 Marking R32 marking R33 NE68533 NE97833 NE68133 R24 marking NE94433
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 33 +0.2 2.8 -0.3 2.9 ± 0.2 0.95 2 1.9 3 +0.10 0.4 -0.05 ALL LEADS 1 +0.2 1.5 -0.1 +0.10 0.65 -0.15 MARKING 1.1 to 1.4 0.8 0 to 0.1

R47 marking

Abstract: U73-U74 NE25118 NE85618 1817 transistor NE34018 NE68018 NE68118 R27 marking NE68618
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 18 2.1 ± 0.2 +0.10 0.3 -0.05 LEADS 2, 3, 4 1.25 ± 0.1 2.0 ± 0.2 3 2 0.65 1.3 0.60 1 4 +0.10 0.4 -0.05 MARKING 0.15 0.9 ± 0.1 0 to 0.1

NE85630

Abstract: T62 marking marking R33 NE02130B NE02130 NE94430 NE68030 NE68130 NE68530 NE68630
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 30 2.1 ± 0.2 1.25 ± 0.1 0.65 2.0 ± 0.2 2 1.3 3 1 +0.1 0.3 -0.05 ALL LEADS MARKING 0.15 0.9 ± 0.1 0 to 0.1 PART NUMBER NE02130B NE02130

UPA801T

Abstract: UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T

C1A MARKING

Abstract: c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 LEADS 2, 3, 4 2 2.9 ± 0.2 0.95 3 1.9 0.85 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 0.8 0.16 +0.10

2SC5193

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5193 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz

T88 NEC

Abstract: 2SC5191-T1B 2sc5191
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5191 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz

diode t88

Abstract: zener diode 4.7V 1n4000 DIODE t88 diode T-72 diode 1n5000 5261B 5230b 1N4000 1N5000 SERIES
Contextual Info: 7 0 2 0 ^ DOOfifi^O Olô •RHil 1N5000 SERIES ZEN ER DIODE GLASS SEALED APPLICATION: FEATURES: - JE D E C IN5000 Series - Silicon planar construction ■DO-35 Package - Available in 8 mm plastic carrier tape - Voltage range: 2.4 to 91V Voltage Regulation

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

NEC 2551

Abstract: 9033 transistor 2SC5192 2SC5192-T1 2SC5192-T2 702 Z TRANSISTOR T88 NEC TD-2485
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion Unit: mm • Low Noise +0.2 1.5 +0.2 –0.1 3 2 • Large Absolute Maximum Collector Current

pt 8726 transistor

Abstract: 2SC5193 2SC5193-T1 2SC5193-T2 T88 NEC
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING Units: mm • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz

IC 751 1124

Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion Unit: mm NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.25±0.1 QUANTITY PACKING STYLE

2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The

2SC5191

Abstract: nec 2035 744 2SC5191-T1 2SC5191-T2 nec 2412 transistor 2203
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5191 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS Unit: mm • Low Voltage Operation, Low Phase Distortion 2.8±0.2 0.4 +0.1 −0.05 NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz

713-102

Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC5192

Abstract: 2SC5192-T1 2SC5192-T2 TD-2485
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

diode t88

Contextual Info: MOTOROLA Order this document by BAV70WT1/D SEMICONDUCTOR TECHNICAL DATA BAV70WT1 Dual Switching Diode M o to ro la P re ferre d D e vic e ANODE • N— ° 1 CATHODE -N - 2 -O MAXIMUM RATINGS T a = 2 5 ° C Symbol Max Unit Reverse Voltage Rating Vr 70

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

NEC IC D 553 C

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5193 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD FEATURES PACKAGE DRAWING • Low Voltage Operation, Low Phase Distortion • Low Noise Units: mm NF = 1 .5 dB TYP. @ V c e = 3 V , Ic = 7 mA, f = 2 GHz