TA 2025 B Search Results

T718N

Abstract: T1189N T1509N T1989N T358N T508N T588N T879N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung [°C] [A] [W] 25 302 431 482 609 943 1225 1406 1791 2025 2910 290 413 462 583

bt 2025

Abstract: transistor bc 541 2SK334 TRANSISTOR IFW transistor Bc 542 60N11
Contextual Info: S ANYO SEMICONDUCTOR CORP 3SE D 7^707^ 00CHEE1 1 . T-29-25 —— N-Channel Junction Silicon FET 2025 Capacitor Microphone Applications • 933C FEA TU RE •Because it has an ultra-compact outline, sets can be made compact. A BS O L U T E M AXIM U M RATINGS/Ta = 25° C

TT 2206

Abstract: cvr 440 2SK595
Contextual Info: 2SK595 2025 N9- Y * \ ,a * B c,») - - M t t t * * J l t %’ •FBET7ot^ «S. Assolute Ha» 1nun k A tin ça A * - - 5 #C un 1 1 •20 10 1 100 12S -55-025 r - k - r u o W£ V c o o r- > m t 1G ru !0 Po Tj TtlB s a n a ta * E l e c t x i c a l C h *X A ct- ri*tic*/T »- 2 S #C

clinical Thermometer

Abstract: Thermometer clock LCD ic xl 1507 MSM5052-02 lcd N7 Linear Thermometer ic 3.5-DIGIT lcd IC 2025 Thermometer ic oki c301
Contextual Info: O K I Semiconductor MSM5052-02 Clinical Thermometer with Clock Function GENERAL DESCRIPTION The M SM 5052-02 is an IC, equipped w ith both clinical therm om eter and clock functions. This device uses a therm istor as its sensing elem ent and displays tem peratures in the range of 32 °

thermistor 103

Abstract: thermistor 10k 25 3435 MSM5052-10 3.5-DIGIT lcd IC 2025 Thermometer clock LCD ic Digital alarm clock ic with 28 pin 158T MSM5052-10GS-BK MSM5052-10GS-K
Contextual Info: O K I Semiconductor M S M 5 5 2 - 1 Thermometer with Clock and Alarm Function GENERAL DESCRIPTION T he MSM5052-10 is a 4-bit lo w -p o w e r m icrocontroller, m a n u fa ctu re d u sin g CM OS p rocess technology, a n d is eq u ip p e d w ith a d ig ital th erm o m eter, a n ala rm w ith a sn o o ze fu n ctio n , an d

IC 2025

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

smd diode af3

Abstract: SMD IC 2025 DIODE BAT 85 SMD PACKAGE PLCC28R IC 2025 PEB2025 PEB2025-N PEB2025-P PL-CC-28-R 2025N
Contextual Info: Since April 1, 1999, Siemens Semiconductor is Infineon Technologies. The next revision of this document will be updated accordingly. ATTENTION ISDN Exchange Power Controller IEPC PEB 2025 CMOS IC Features ● Supplies power to up to four transmission lines

AN1955

Abstract: MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 1, 8/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to

C5750X7S2A106KT

Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

CW12010T0050GBK

Abstract: CW12010T0050G J965 ATC600F1R1BT250XT Transistor J550
Contextual Info: Document Number: MRF8P20160H Rev. 0, 4/2010 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

CW12010T0050GBK

Abstract: J965 J546 mrf8p GCS351-HYB1900 ATC600F1R1BT250XT MRF8P2160H ATC600F0R3BT250XT ATC600F2R4BT250XT CRCW12068R25FKEA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20160HR3 MRF8P20160HSR3 Designed for CDMA base station applications with frequencies from 1880 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to

2SK595

Abstract: DDCH230 TRANSISTOR IFW transistor BC 552
Contextual Info: SANYO SEMICONDUCTOR CORP 32E D ? tn ? 0 7 b DDCH230 T“29“25. - N-Channel Junction Silicon FE T 2025 .Vafc-.l'^ ,11,Itim _A T Capacitor Microphone Applications 2206 Features . Especially suited for use in audio, telephone capacitor microphones . Excellent voltage characteristic

Contextual Info: DATA SHEET SKY18108-11: 0.4-2.7 GHz SP9T Antenna Switch Module Applications • Dual-mode handsets GSM/EDGE, Quad/TD-SCDMA or WCDMA dual mode • Low-cost, small footprint FEMs Features • Supports quad-band GSM and TD-SCDMA or GSM and WCDMA dual-mode for 2G and 3G systems

MRF8P20140WH/HS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

201323H

Abstract: SKY18108-11 DCS-1800 SP9T ntc 1710
Contextual Info: DATA SHEET SKY18108-11: 0.4-2.7 GHz SP9T Antenna Switch Module Applications • Dual-mode handsets GSM/EDGE, Quad/TD-SCDMA or WCDMA dual mode • Low-cost, small footprint FEMs Features • Supports quad-band GSM and TD-SCDMA or GSM and WCDMA dual-mode for 2G and 3G systems

UTC2025

Abstract: UTC 2025 uln 2800 data Avantek* UTO AVANTEK uto Avantek* UTC 2025 UTO 2025 AVANTEK utc UTC 2025 B MLPI
Contextual Info: MME ì> m u m ib b O a v a n tek 00000=13 1 B A V A U T O /U T C 2025 S eries T h in -F ilm C a s c a d a b le A m p lifie r 100 to 2000 M H z • • AVANTEK INC FEATURES APPLICATIONS • Frequency Range: 100 to 2000 MHz • High Dynamic Range • Medium Gain: 11.0 dB Typ

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

VARTA 170 dk

Abstract: energy meter circuit diagram em 301 l and t make CR-P2 varta VARTA 250 dk CH-8952 VARTA crp2 lithium 6 v varta v 60 r diode catalogue VARTA 60 dk TAG 8952
Contextual Info: Varta Micro Batteries Pr i m a r y L i t h i u m C e l l s Primary Lithium Cells Sales Program and Technical Handbook Contents 1. General Information, 3 - 8 1.2 Constructions of Lithium Cells, 4 - 5 1.3 Characteristics and Applications, 6 1.4 Applications for Primary Lithium Cells, 7

Contextual Info: c r 'iv iW .= .,A|r \ CONTROL PANEL UNITS REMOTE CONTROL UNITS CUSTOM MADE KEYBOARD CONTROL PANEL UNITS MT SWITCH SHEET TYPE (m t sw SWITCH SHEET TYPE t BUILT-IN RUBBER CONTACT TYPE METAL DOME TYPE CONDUCTIVE RUBBER TYPE 2S d'A$Y7‘ TACTILE FEELING TYPE

*J532

Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

MSM5052

Abstract: MSM5052-02 32-0042 lcd N7 k4k4
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

ATC600F100JT250XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from